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Vishay Siliconix SI4465DY-T1
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Bristol Electronics	SI4465DY-T1		1,713			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4465DY-T1
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Bristol Electronics	SI4465DY-T1		354			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Synergy Semiconductor Corp SI4465DY
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Bristol Electronics	SI4465DY		56			1 - 10 - 100 - 1000 - 10000 -	Get Quote
VISHAY SILIC SI4465DY
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Bristol Electronics	SI4465DY		33			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4465DY TRANSISTOR,MOSFET,P-CHANNEL,8V V(BR)DSS,14A I(D),SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4465DY		130			1 $3.9 10 $3.9 100 $2.405 1000 $2.405 10000 $2.405	Buy Now

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SI4465D Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
Si4465DY	Unknown	Metal oxide P-channel FET, Enhancement Type	Original	PDF
Si4465DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si4465DY	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
Si4465DY SPICE Device Model	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4465DY-T1	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF

SI4465D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4465DY Abstract: Si4465DY SPICE Device Model Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4465DY 07-May-01 Si4465DY SPICE Device Model	PDF
Untitled Abstract: No abstract text available Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1	Original	Si4465DY Si4465DY-T1 08-Apr-05	PDF
74100 Abstract: 74100 datasheet AN609 Si4465DY Text: Si4465DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4465DY AN609 01-Sep-05 74100 74100 datasheet	PDF
74278 Abstract: Si4465DY Si4465ADY Si4465DY-T1 SI4465ADY-T1-E3 Text: Specification Comparison Vishay Siliconix Si4465ADY vs. Si4465DY Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET SO-8 Identical Part Number Replacements Si4465ADY-T1-E3 Replaces Si4465DY-T1-E3 Si4465ADY-T1-E3 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4465ADY Si4465DY Si4465ADY-T1-E3 Si4465DY-T1-E3 Si4465DY-T1 31-Oct-06 74278	PDF
Si4465DY Abstract: Si4465DY-T1 Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.009 @ VGS = - 4.5 V - 14 0.011 @ VGS = - 2.5 V - 12 0.016 @ VGS = - 1.8 V - 10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4465DY	Original	Si4465DY Si4465DY-T1 S-31989--Rev. 13-Oct-03	PDF
Si4465DY Abstract: Si4465DY-T1 Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1	Original	Si4465DY Si4465DY-T1 18-Jul-08	PDF
74239 Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1 Text: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4451DY Si4465DY Si4451DY-T1-E3 Si4465DY-T1-E3 Si4451DY-T1 Si4465DY-T1 31-Oct-06 74239	PDF
Si4465DY Abstract: No abstract text available Text: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V "14 0.011 @ VGS = –2.5 V "12 0.016 @ VGS = –1.8 V "10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET	Original	Si4465DY S-59620--Rev. 12-Oct-98	PDF
DIODE 22B4 Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4 Text: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams	Original	BA92-01774A BA41-# 400MHZ 512MBYTE 66MHZ MAP31 68ohm 3000mA 012ohm DIODE 22B4 BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4	PDF
LEXAN 121r - 21051 Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A Text: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F	Original	BA31-00024A BA39-00474A BA39-00493A S/80GB WLAN-802 L50000 L35mm L228mm LEXAN 121r - 21051 lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A	PDF
AR5212 Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516 Text: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)	Original	ISL6225VCC AR5212 ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516	PDF
smd code wKX Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194 Text: [ Z zhtz\|unGwyvwypl{hy Y X {opzGkvj\|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hyGpumvyth{pvuG{oh{Gpz zhtz\|unGlslj{yvupjzGjvNzGwyvwly{U kvGuv{GkpzjsvzlG{vGvyGk\|wspjh{lGmvyGv{olyz ljlw{GhzGh\|{ovyplkGiGzhtz\|unU k k jpjospk j i jw\|GGGGGGaG ihuphzVkv{ohu jGzGaG tjoTtGvkltR	Original	wziG2893-3017F ELM7S08WS 100nF MMBD41 PGB001 smd code wKX samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194	PDF
ST T4 D560 Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom	Original	YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4	PDF
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05	PDF

CDBM c28 Abstract: U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152 Text: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Foster/ Prestonia CPU Foster/ Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4)	Original	100MHz-CPU/GCLE/ITP 33MHz-PCI 48MHz-USB/SIO 318MHz 768MHz 200MB/s 200MHz 100MHz 400MHz CDBM c28 U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152	PDF
SUS304-CSP Abstract: lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP Text: This Document can not be used without Samsung’s authorization. 4 Explorded View and Mechanical Parts List 4-1 X-50 15.4” LCD SENS X-50 (15.4” LCD Explorded View) 4-1 4 This Document can not be used without Samsung’s authorization. 4-2 X-50 15.4” LCD	Original	NP-X50C001/SHK BA75-01514B BA81-01005B BA70-00584A PLATE-MAGNE50-EHQ BA99-08083A NP-X50-EHQ BA99-08084A BA99-08086A SUS304-CSP lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP	PDF
LM317 SOT223 Abstract: SIC350S BA92-03528A BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920 Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P29G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List	Original	BA75-01617A BA59-01328C BA59-01328G BA75-01616A BA92-02757A BA92-03528A BA67-00277A BA92-03125A BA43-00134A BA75-01635A LM317 SOT223 SIC350S BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920	PDF
MMZ1608S121AT Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2 Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV	Original	945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2	PDF
ar7161 Abstract: schematic diagram inverter 2000w 216P9NZCGA12H AR7141 ar716 samsung dvd Schematic circuit diagram schematic diagram trace 2425 inverter 2000w r305 finger print module K4D26328 ASTM D710 Text: SENS P20 Owner : Kevin, Lee Signature : HS, Kim Robin, Cho APPROVAL TAURUS II MAIN BOARD BA41-00346A PBA:BA92-xxxxxx, SMT:BA92-xxxxxx MP 0130-1.1 Jan.30.2003 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood	Original	S3935 32MB/AUDIO BA92-01951A BA92-01951B NP20-CHN, NP20-EHQ, NP20-SHK 32MB/4WAY BA92-01971A BA92-01972A ar7161 schematic diagram inverter 2000w 216P9NZCGA12H AR7141 ar716 samsung dvd Schematic circuit diagram schematic diagram trace 2425 inverter 2000w r305 finger print module K4D26328 ASTM D710	PDF
M28N-2 Abstract: CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254 Text: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Prestonia CPU Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4) 533MHz(133MHz x 4)	Original	100MHz-CPU/GCLE/ITP 33MHz-PCI 48MHz-USB/SIO 318MHz 768MHz 200MB/s 200MHz 100MHz 400MHz M28N-2 CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254	PDF
LM317 SOT223 Abstract: w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A Text: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P27G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List	Original	NP-P27/F00/SER BA75-01617A BA59-01328C BA59-01328G BA75-01616A BA92-02757A BA92-03528C BA67-00278A BA43-00134A LM317 SOT223 w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A	PDF
T0252AA Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y	OCR Scan	SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB	PDF
Untitled Abstract: No abstract text available Text: SÌ4465PY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product v 0# m -8 r d s (ON) fQJ 0.009 9 Vqs = -4 -5 V ±1 4 0.011 9 Vqs = —2.5 V ±12 0.016 9 VGS = -1 .8 V ±1 0 9 ° \* A til SO-8 "It rm P-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S \| T a	OCR Scan	4465PY S-59620-- 12-Oct-98 988-800X3	PDF
IRF7205 Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY	OCR Scan	BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240	PDF

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SI4465D Search Results

SI4465D Price and Stock

Vishay Siliconix SI4465DY-T1

Vishay Intertechnologies SI4465DY-T1

Synergy Semiconductor Corp SI4465DY

VISHAY SILIC SI4465DY

Vishay Intertechnologies SI4465DY

SI4465D Datasheets (5)

SI4465D Datasheets Context Search

Si4465DY

Untitled

74100

74278

Si4465DY

Si4465DY

74239

Si4465DY

DIODE 22B4

LEXAN 121r - 21051

AR5212

smd code wKX

ST T4 D560

VN10KLS

CDBM c28

SUS304-CSP

LM317 SOT223

MMZ1608S121AT

ar7161

M28N-2

LM317 SOT223

T0252AA

Untitled

IRF7205