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    Vishay Intertechnologies VS-MBRD320-M3

    Schottky Diodes & Rectifiers Schottky - D-PAK-e3
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    TTI VS-MBRD320-M3 Tube 3,000
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    T0252AA Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 4Ô55452 International i ü Rectifier D G157Gb 30Ô • IN R PD-9.654A IRFR9014 IRFU9014 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR9014 Straight Lead (IRFU9014) Available in Tape & Reel


    OCR Scan     		PDF G157Gb IRFR9014 IRFU9014 IRFR9014) IRFU9014)

    Untitled

    Abstract: No abstract text available
    Text: IR F R 2 6 0 5 IR F U 2 6 Q5 htemational ^Rectifier HEXFET Power MOSFET • • • • • • • Ultra Low On-Resistance ESD Protected Surface Mount IRFR2605 Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching


    OCR Scan     		PDF IRFR2605) IRFU2605)

    EM- 546 motor

    Abstract: No abstract text available
    Text: HGTD1N120BNS, HGTP1N120BN Data Sheet February 1999 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    OCR Scan     		PDF HGTD1N120BNS, HGTP1N120BN HGTD1N120BNS HGTP1N120BN O-252AA T0-252AA EM- 546 motor

    0C28

    Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
    Text: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common


    OCR Scan     		PDF A/100 00V/trr 30nsec 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF O-251AA O-252AA T0-252AA 0C28 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE

    G3N60B

    Abstract: No abstract text available
    Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		PDF HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF 4.4 A /30— 40V 2.38M A X .094 FEATURES • TO-251AA Case 2.38 M A X (.094) n 0 TO-252AA Case, Surface Mount Device 16-221245) 0.90035) N O M IN A L ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop


    OCR Scan     		PDF 4VQ03CT 4VQ04CT 4VQ03CTF 4VQ04CTF O-251AA O-252AA T0-252AA 20x20mm 4VQ03CT 4VQ03CTF

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 50VQ09 50VQ10 50VQ09F 50VQ10F 5. 5A / 90— 100V TO-2 5 2 A A TO-2 S 1 AA FEATURES 2.38M AX .094 6.71.2641 6.41.2521" 5.351.211) "5.051.199)" ° TO-251AA Case a> °T0-252AA Case Surface Mount Device 2.38M A X (.094) 1.27(.05) M AX


    OCR Scan     		PDF 50VQ09 50VQ10 50VQ09F 50VQ10F O-251AA T0-252AA O-252AA 00Giab2

    F10P03L

    Abstract: 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L
    Text: RFD10P03L, RFD10P03LSM, RFP10P03L HARRIS S E M I C O N D U C T O R 10A, 30V, 0.200&, Logic Level P-Channel Power MOSFET May 1997 Features Description • 10A, 30V These products are P-Channel power MOSFETs manufac­ tured using the MegaFET process. This process, which uses


    OCR Scan     		PDF RFD10P03L, RFD10P03LSM, RFP10P03L 1-800-4-HARRIS F10P03L 10P03L p-channel mosfet BL Harris Semiconductor Integrated Circuits N10T TC227 RFD10P03L RFD10P03LSM RFD10P03LSM9A RFP10P03L

    Untitled

    Abstract: No abstract text available
    Text: HAJtms S HUF76129D3, HUF76129D3S S e m ic o n d u c to r 7 20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs May 1998 | Features • Logic Level Gate Drive • 20A, 30V • Ultra Low On-Resistance, ros ON = 0.016£2 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF HUF76129D3, HUF76129D3S O-252AA T0-252AA 330mm

    Untitled

    Abstract: No abstract text available
    Text: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)


    OCR Scan     		PDF Mfl55452 IRFR224 IRFU224 IRFR224) IRFU224)

    IRFR210

    Abstract: IRFR212 IRFU210 IRFU212 UJ31 irfh212 k 3525 MOSFET
    Text: h e D I MASS4S3 aaafie^s i I • INTERNATIONAL RECTIFIER ■ Data Sheet No. PD-9.526A T-35-25 INTERNATIONAL RECTIFIER IIO R I AVALANCHE AND dv/dt RATED IRFRSIO IRFR21S IRFU210 IRFUSiS HEXFET TRANSISTORS :H N -C H A N N E L Product Summary 200 Volt, 1.5 Ohm HEXFET


    OCR Scan     		PDF t-35-25 IRFU210 IRFR210, IRFR212, IRFU210, IRFU212 IRFR210TR IRFR210 IRFR212 IRFU210 UJ31 irfh212 k 3525 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V


    OCR Scan     		PDF IRFR9120N) IRFU9120N) -100V

    Untitled

    Abstract: No abstract text available
    Text: jC T jr c RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS semiconductor July 1996 File Number 4075.1 6A, 100V - 200V Ultrafast Dual Diodes Features RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS and RURD620CCS are ultrafast dual diodes


    OCR Scan     		PDF RURD610CC, RURD615CC, RURD620CC, RURD610CCS, RURD615CCS, RURD620CCS

    ur420

    Abstract: No abstract text available
    Text: RURD420U y / S em iconductor February 1999 Advance Information 3A, 200V Ultrafast Diode File Number Features The RURD420U is an ultrafast diode with soft recovery char­ acteristics trr < 30ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar con­


    OCR Scan     		PDF RURD420U RURD420U TA49034. ur420

    10J2

    Abstract: 1B08S 1B06S 50WF20 10JF1 30WF20F 50WF40F 1B01S 1B02S 1B04S
    Text: SURFACE MOUNTED DEVICES INTERNATIONAL RECTI FIE R 2bE D • INTERNATIONAL RECTIFIER 4ÖS54S5 001GES7 fc. IOR ■ T - ô / -£>3 ~ STANDARD RECOVERY RECTIFIERS Part Number 10J1 10J2 10J4 VfMi 'F AV 0 TC VRRM (V) (A) °C <FM ‘ w IV) too 1.0 1.0 1.0 31 31


    OCR Scan     		PDF S54S5 001GES7 T0-243AA S0T-89) 10JF1 10JF2 10JF3 10JF4 6CWF10F 6CWF20F 10J2 1B08S 1B06S 50WF20 30WF20F 50WF40F 1B01S 1B02S 1B04S

    75307D

    Abstract: 75307P TA75307 HUF75307D3
    Text: HUF75307P3, HUF75307D3, HUF75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307D3S AN7254 AN7260. 75307D 75307P TA75307 HUF75307D3

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06LESM, RFP8P06LE 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET ju iy 1 9 9 7 Features Description • 8A, 60V T hese pro du cts are P -C hannel po w e r M O S FE T s m an ufacture d using the M eg aF E T process. T his process, w h ich uses feature sizes appro aching tho se o f LSI circuits,


    OCR Scan     		PDF RFD8P06LESM, RFP8P06LE 0-300i2 1-800-4-HARRIS

    AN9321

    Abstract: AN9322
    Text: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve


    OCR Scan     		PDF RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM TA09922. AN7254 AN7260. AN9321 AN9322

    50VF10F

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE 50VF10 50VF20 50VF10F 50VF20F 5.5A/100~ 200V/trr : 40nsec 2 .3 8 M A X .094 FEATURES ° TO-251AA Case 2 .3 8 M A X (.094 ) n • TO-252AA Case, Surface Mount Device 0 .9 (0 3 5 ) N O M IN A L 5 .9 8 (2 3 5 ) 1_ ° Ultra - Fast Recovery


    OCR Scan     		PDF 50VF10 50VF20 50VF10F 50VF20F A/100~ 00V/trr 40nsec O-251AA O-252AA T0-252AA

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF 2.2A /30— 40V 2 .38M A X .0 9 4 ’~ 6 .4 (.2 5 2 ) ' , 5 .3 5 1 2 1 1) 1.271.05) MAX r 5 .0 5 U 9 9 ) FEATURES °TO-251AA Case I •T0-252AA Case, Surface Mount Device 2.38M A X (.094) IA n 1


    OCR Scan     		PDF 2VQ03CT 2VQ04CT 2VQ03CTF 2VQ04CTF O-251AA T0-252AA 9C035)

    4VQ09CT

    Abstract: 4VQ09CTF 4VQ10CT 4VQ10CTF 100V schottky diode
    Text: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4 .4 A / 9 0 ~ 1 0 0 V 6.71264 * 6.4 .252)' ,5-35(.211). 2.38MAX 1.094) FEATURES •TO-251AA Case 2.38MAX (.094) ll.27i.05) Im a x n o TO-252AA Case, Surface Mount Device 6.22Í.245) 5.98Í.235) 0.9Í.035)


    OCR Scan     		PDF 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF O-251AA O-252AA 38MAX 38MAX 58MAX 4VQ10CTF 100V schottky diode

    smd diode f54

    Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
    Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040


    OCR Scan     		PDF 10MQ040 10MQ060 10MQ090 15MQ040 10BQ015 10BQ040 10BQ060 10BQ100 30BQ015 30BQ040 smd diode f54 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150

    3n60a4

    Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A
    Text: HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 TA49327. O-263AB O-263AB 330mm 3n60a4 BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S9A

    diode F 82 bp

    Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
    Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip


    OCR Scan     		PDF 10DS1 EC10DS2 EC10DS4 EC10DS6 EC10Q EC10QSO 10QS05 10QS06 EC10QS10 EC15Q diode F 82 bp DIODE BP ZF8.2 ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT