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Vishay Siliconix SI8817DB-T2-E1 MOSFET P-CH 20V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8817DB-T2-E1	Digi-Reel	10,249		1	1 $0.73 10 $0.45 100 $0.73 1000 $0.19794 10000 $0.19794	Buy Now
	SI8817DB-T2-E1	Cut Tape	10,249		1	1 $0.73 10 $0.45 100 $0.73 1000 $0.19794 10000 $0.19794	Buy Now
	SI8817DB-T2-E1	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.16954	Buy Now
Bristol Electronics	SI8817DB-T2-E1		195		13	1 - 10 - 100 $0.2681 1000 $0.1547 10000 $0.1547	Buy Now
Quest Components	SI8817DB-T2-E1		156			1 $0.55 10 $0.44 100 $0.275 1000 $0.275 10000 $0.275	Buy Now
Vishay Intertechnologies SI8817DB-T2-E1 Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8817DB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8817DB-T2-E1	Reel	3,000	6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1262	Buy Now
Mouser Electronics	SI8817DB-T2-E1		64,853			1 $0.51 10 $0.35 100 $0.239 1000 $0.171 10000 $0.128	Buy Now
Newark	SI8817DB-T2-E1	Cut Tape	2,495		5	1 $0.486 10 $0.389 100 $0.276 1000 $0.276 10000 $0.276	Buy Now
	SI8817DB-T2-E1	Reel			3,000	1 $0.181 10 $0.181 100 $0.181 1000 $0.181 10000 $0.164	Buy Now
TTI	SI8817DB-T2-E1	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.128	Buy Now
EBV Elektronik	SI8817DB-T2-E1			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI8817DB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8817DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT		Original	PDF

SI8817DB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8817DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.076 at VGS = -4.5 V -2.9 0.100 at VGS = -2.5 V -2.5 0.145 at VGS = -1.8 V -2.1 0.320 at VGS = -1.5 V -0.5 MICRO FOOT 0.8 x 0.8	Original	Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si88 Abstract: si8817 Text: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)	Original	Si8817DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 si8817	PDF
Untitled Abstract: No abstract text available Text: Si8817DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.076 at VGS = - 4.5 V - 2.9 0.100 at VGS = - 2.5 V - 2.5 0.145 at VGS = - 1.8 V - 2.1 0.320 at VGS = - 1.5 V - 0.5 VDS (V)	Original	Si8817DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
Untitled Abstract: No abstract text available Text: COMPONENTS FOR THE INTERNET OF THINGS Touching the Human Body In the Home VISHAY and the INTERNET of THINGS IoT Vishay has stepped up to the challenges of the Internet of Things (IoT) with a broad portfolio of unique passive and active solutions. These best-in-class components are optimally suited for the “Things” being	Original	VMN-MS6975-1502	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406	PDF
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF