SI8800EDB Search Results

SI8800EDB Price and Stock

Filter by Manufacturer


Vishay Siliconix SI8800EDB-T2-E1 MOSFET N-CH 20V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8800EDB-T2-E1	Cut Tape	2,493		1	1 $0.72 10 $0.446 100 $0.72 1000 $0.19594 10000 $0.19594	Buy Now
	SI8800EDB-T2-E1	Digi-Reel	2,493		1	1 $0.72 10 $0.446 100 $0.72 1000 $0.19594 10000 $0.19594	Buy Now
	SI8800EDB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.16778	Buy Now
Vishay Intertechnologies SI8800EDB-T2-E1 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8800EDB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8800EDB-T2-E1	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.19104	Buy Now
Mouser Electronics	SI8800EDB-T2-E1					1 $0.66 10 $0.422 100 $0.279 1000 $0.196 10000 $0.133	Get Quote
Newark	SI8800EDB-T2-E1	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.175	Buy Now
	SI8800EDB-T2-E1	Reel			3,000	1 $0.179 10 $0.179 100 $0.179 1000 $0.179 10000 $0.161	Buy Now
TTI	SI8800EDB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.146	Buy Now
Avnet Asia	SI8800EDB-T2-E1			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.19836	Buy Now

EBV Elektronik	SI8800EDB-T2-E1			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SI8800EDB-T2-E1 Trans MOSFET N-CH 20V 2.8A 4-Pin Micro Foot T/R / MOSFET N-CH 20V MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI8800EDB-T2-E1		6,000			1 - 10 - 100 - 1000 $0.1544 10000 $0.1295	Buy Now

SI8800EDB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8800EDB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V MICROFOOT		Original	PDF

SI8800EDB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
si88 Abstract: No abstract text available Text: Si8800EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si8800EDB AN609, 19-May-10 si88	PDF
Untitled Abstract: No abstract text available Text: New Product Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.080 at VGS = 4.5 V 2.8 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21	Original	Si8800EDB 2002/95/EC 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 MICRO FOOT 0.8 x 0.8 S 3 xxx	Original	Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET	Original	Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21	Original	Si8800EDB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • Halogen-free According to IEC 61249-2-21	Original	Si8800EDB 2002/95/EC 11-Mar-11	PDF
si8800 Abstract: Si8800E Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET	Original	Si8800EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8800 Si8800E	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8800EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8800EDB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.080 at VGS = 4.5 V 2.8 VDS (V) 20 0.090 at VGS = 2.5 V 2.6 0.105 at VGS = 1.8 V 2.4 0.150 at VGS = 1.5 V 2.0 • • • • • Qg (Typ.) 3.2 nC TrenchFET Power MOSFET	Original	Si8800EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF