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Vishay Siliconix SI7129DN-T1-GE3 MOSFET P-CH 30V 35A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7129DN-T1-GE3	Cut Tape	10,171		1	1 $1.51 10 $0.955 100 $1.51 1000 $0.45429 10000 $0.45429	Buy Now
	SI7129DN-T1-GE3	Digi-Reel	10,171		1	1 $1.51 10 $0.955 100 $1.51 1000 $0.45429 10000 $0.45429	Buy Now
	SI7129DN-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.39829	Buy Now
RS	SI7129DN-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.63	Get Quote
New Advantage Corporation	SI7129DN-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.4342	Buy Now
Vishay Intertechnologies SI7129DN-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7129DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI7129DN-T1-GE3	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.35055	Buy Now
Mouser Electronics	SI7129DN-T1-GE3		17,983			1 $1.18 10 $0.797 100 $0.555 1000 $0.411 10000 $0.362	Buy Now
Newark	SI7129DN-T1-GE3	Cut Tape	11,027		5	1 $0.785 10 $0.778 100 $0.601 1000 $0.601 10000 $0.601	Buy Now
	SI7129DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.379	Buy Now
TTI	SI7129DN-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.356	Buy Now
Avnet Asia	SI7129DN-T1-GE3			10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SI7129DN-T1-GE3			9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Huntington SI7129DN-T1-GE3 MOSFET P-CH 30V 35A 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	SI7129DN-T1-GE3		435,760			1 - 10 - 100 - 1000 $0.1122 10000 $0.0929	Buy Now

SI7129 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7129DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8		Original	PDF

SI7129 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
si7129dn Abstract: SI7129DN-T1-GE3 Si7129 Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si7129	PDF
Untitled Abstract: No abstract text available Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI7129DN-T1-GE3 Abstract: No abstract text available Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 18-Jul-08	PDF
Si7129 Abstract: No abstract text available Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129	PDF
Untitled Abstract: No abstract text available Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si7129 Abstract: Si7129DN Si7129DN-T1-GE3 Si7129DN-T1-GE Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129 Si7129DN-T1-GE	PDF
68993 Abstract: 4407 MOSFET 4407 Si7129DN 0441 CIRCUIT 4407 AN609 Text: Si7129DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si7129DN AN609, 02-Oct-08 68993 4407 MOSFET 4407 0441 CIRCUIT 4407 AN609	PDF
Si7129DN Abstract: 64440 Text: SPICE Device Model Si7129DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7129DN 18-Jul-08 64440	PDF
Untitled Abstract: No abstract text available Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7129DN-T1-GE3 Abstract: Si7129 Si7129DN 82576 Si7129DN-T1-GE Text: New Product Si7129DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®	Original	Si7129DN Si7129DN-T1-GE3 18-Jul-08 Si7129 82576 Si7129DN-T1-GE	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si7129DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7129DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: LTC3863 60V Low IQ Inverting DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 3.5V to 60V Wide Negative VOUT Range: –0.4V to Beyond –150V Low Operating IQ = 70µA Strong High Voltage MOSFET Gate Driver Constant Frequency Current Mode Architecture	Original	LTC3863 50kHz 850kHz 75kHz 750kHz 12-Lead DFN-10 MSOP-10E 900kHz,	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
CGA6M3X7S2A475K Abstract: Si7129 0644A LTC3863 260N Si7129DN Text: LTC3863 60V Low IQ Inverting DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Wide Operating VIN Range: 3.5V to 60V Wide Negative VOUT Range: –0.4V to Beyond –150V Low Operating IQ = 70µA Strong High Voltage MOSFET Gate Driver Constant Frequency Current Mode Architecture	Original	LTC3863 3863f com/3863 CGA6M3X7S2A475K Si7129 0644A 260N Si7129DN	PDF

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF

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SI7129 Datasheets (1)

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si7129dn

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SI7129DN-T1-GE3

Si7129

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Si7129

68993

Si7129DN

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Si7129DN-T1-GE3

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FSQ510 Equivalent

CGA6M3X7S2A475K

si7121

Diode SOT-23 marking 15d