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    SI7129DN Price and Stock

    Vishay Siliconix SI7129DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK1212-8
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    DigiKey SI7129DN-T1-GE3 Cut Tape 10,171 1
    • 1 $1.51
    • 10 $0.955
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    • 1000 $0.45429
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    SI7129DN-T1-GE3 Digi-Reel 10,171 1
    • 1 $1.51
    • 10 $0.955
    • 100 $1.51
    • 1000 $0.45429
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    SI7129DN-T1-GE3 Reel 9,000 3,000
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    RS SI7129DN-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI7129DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7129DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7129DN-T1-GE3)
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    Avnet Americas SI7129DN-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SI7129DN-T1-GE3 17,983
    • 1 $1.18
    • 10 $0.797
    • 100 $0.555
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    Newark SI7129DN-T1-GE3 Cut Tape 11,027 5
    • 1 $0.785
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    • 100 $0.601
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    SI7129DN-T1-GE3 Reel 3,000
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    TTI SI7129DN-T1-GE3 Reel 15,000 3,000
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    Avnet Asia SI7129DN-T1-GE3 10 Weeks 3,000
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    EBV Elektronik SI7129DN-T1-GE3 9 Weeks 3,000
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    Vishay Huntington SI7129DN-T1-GE3

    MOSFET P-CH 30V 35A 1212-8
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    Win Source Electronics SI7129DN-T1-GE3 435,760
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    SI7129DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7129DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A 1212-8 Original PDF

    SI7129DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    si7129dn

    Abstract: SI7129DN-T1-GE3 Si7129
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si7129 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI7129DN-T1-GE3

    Abstract: No abstract text available
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 18-Jul-08 PDF

    Si7129

    Abstract: No abstract text available
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si7129

    Abstract: Si7129DN Si7129DN-T1-GE3 Si7129DN-T1-GE
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 11-Mar-11 Si7129 Si7129DN-T1-GE PDF

    68993

    Abstract: 4407 MOSFET 4407 Si7129DN 0441 CIRCUIT 4407 AN609
    Text: Si7129DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si7129DN AN609, 02-Oct-08 68993 4407 MOSFET 4407 0441 CIRCUIT 4407 AN609 PDF

    Si7129DN

    Abstract: 64440
    Text: SPICE Device Model Si7129DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7129DN 18-Jul-08 64440 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si7129DN 2002/95/EC Si7129DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si7129DN-T1-GE3

    Abstract: Si7129 Si7129DN 82576 Si7129DN-T1-GE
    Text: New Product Si7129DN Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0114 at VGS = - 10 V - 35 0.0200 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7129DN Si7129DN-T1-GE3 18-Jul-08 Si7129 82576 Si7129DN-T1-GE PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7129DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7129DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3863 60V Low IQ Inverting DC/DC Controller Description Features n n n n n n n n n n n n n n Wide Operating VIN Range: 3.5V to 60V Wide Negative VOUT Range: –0.4V to Beyond –150V Low Operating IQ = 70µA Strong High Voltage MOSFET Gate Driver Constant Frequency Current Mode Architecture


    Original     		LTC3863 50kHz 850kHz 75kHz 750kHz 12-Lead DFN-10 MSOP-10E 900kHz, PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    CGA6M3X7S2A475K

    Abstract: Si7129 0644A LTC3863 260N Si7129DN
    Text: LTC3863 60V Low IQ Inverting DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Wide Operating VIN Range: 3.5V to 60V Wide Negative VOUT Range: –0.4V to Beyond –150V Low Operating IQ = 70µA Strong High Voltage MOSFET Gate Driver Constant Frequency Current Mode Architecture


    Original     		LTC3863 3863f com/3863 CGA6M3X7S2A475K Si7129 0644A 260N Si7129DN PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF