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    SI4884 Price and Stock

    Vishay Siliconix SI4884BDY-T1-E3

    MOSFET N-CH 30V 16.5A 8SO
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    DigiKey SI4884BDY-T1-E3 Digi-Reel 1
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    SI4884BDY-T1-E3 Reel
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    RS SI4884BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4884BDY-T1-GE3

    MOSFET N-CH 30V 16.5A 8SO
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    Vishay Intertechnologies SI4884BDY-T1-E3

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    Bristol Electronics SI4884BDY-T1-E3 7,500
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    SI4884BDY-T1-E3 2,398
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    Quest Components SI4884BDY-T1-E3 6,000
    • 1 $3.4944
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    SI4884BDY-T1-E3 1,363
    • 1 $2.912
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    Vishay Siliconix SI4884DY-T1

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    Bristol Electronics SI4884DY-T1 2,479
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    Vishay Intertechnologies SI4884BDY-T1-GE3

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    Bristol Electronics SI4884BDY-T1-GE3 2,421
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    Find more SI4884 price and stock on Findchips.com

    SI4884 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4884 Philips Semiconductors Logic Level FET Original PDF
    SI4884BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF
    SI4884BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF
    SI4884DY Fairchild Semiconductor Single N-Channel Logic Level PWM Optimized PowerTr Original PDF
    Si4884DY National Semiconductor N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Original PDF
    SI4884DY Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY_NL Fairchild Semiconductor Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET Original PDF
    Si4884DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF

    SI4884 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S99-041

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S99-041--Rev. 04-Oct-99 S99-041

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 08-Apr-05

    SI4884

    Abstract: MS-012AA
    Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 18-Jul-08

    Si4884BDY-T1-E3

    Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504
    Text: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4884BDY Si4884DY Si4884BDY-T1-E3 Si4884DY-T1-E3 Si4884DY-T1 MOSFET 074 73504

    74648

    Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY
    Text: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4884BDY AN609 01-Jun-07 74648 49155 SILICONIX* 9953

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 25Impedance, S-61089-Rev. 19-Jun-06

    Si4884BDY

    Abstract: Si4884BDY-T1
    Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1--E3 08-Apr-05 Si4884BDY-T1

    Untitled

    Abstract: No abstract text available
    Text: SI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MBK187 MBB076

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4884DY 18-Jul-08

    74127

    Abstract: Si4884BDY
    Text: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4884BDY 18-Jul-08 74127

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4884DY 17-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S99-041--Rev. 04-Oct-99

    si4884dy

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S-61804--Rev. 21-Jun-99

    SI4884DY

    Abstract: No abstract text available
    Text: SPICE Device Model SI4884DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SI4884DY SI4884DY

    Si4884DY

    Abstract: SOIC-16
    Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF Si4884DY SOIC-16

    Si4884DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4884DY 17-Apr-01

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 18-Jul-08

    F011

    Abstract: F63TNR F852 L86Z Si4884DY SOIC-16 ECT 1C
    Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF Si4884DY F011 F63TNR F852 L86Z SOIC-16 ECT 1C

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 S-03950--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)


    OCR Scan     		PDF Si4884DY S2SM735 DD17flflT