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Vishay Siliconix SI4884BDY-T1-E3 MOSFET N-CH 30V 16.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4884BDY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4884BDY-T1-E3	Digi-Reel			1	1 $0.86 10 $0.86 100 $0.86 1000 $0.86 10000 $0.86	Buy Now
	SI4884BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4884BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.51	Get Quote
Vishay Siliconix SI4884BDY-T1-GE3 MOSFET N-CH 30V 16.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4884BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4884BDY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4884BDY-T1-E3		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4884BDY-T1-E3		2,398			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4884BDY-T1-E3		6,000			1 $3.4944 10 $3.4944 100 $3.4944 1000 $1.3104 10000 $1.3104	Buy Now
	SI4884BDY-T1-E3		1,323			1 $2.912 10 $2.912 100 $2.912 1000 $1.092 10000 $1.092	Buy Now
	SI4884BDY-T1-E3		580			1 $3.4944 10 $3.4944 100 $3.4944 1000 $1.4414 10000 $1.4414	Buy Now
Vishay Siliconix SI4884DY-T1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4884DY-T1		2,479			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4884DY-T1		1,004			1 $2.66 10 $2.66 100 $2.66 1000 $0.8313 10000 $0.8313	Buy Now
Vishay Intertechnologies SI4884BDY-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4884BDY-T1-GE3		2,421			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4884 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4884	Philips Semiconductors	Logic Level FET	Original	PDF
SI4884BDY	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4884BDY-T1	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4884BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC	Original	PDF
SI4884BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC	Original	PDF
SI4884DY	Fairchild Semiconductor	Single N-Channel Logic Level PWM Optimized PowerTr	Original	PDF
Si4884DY	National Semiconductor	N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages	Original	PDF
SI4884DY	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4884DY	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4884DY_NL	Fairchild Semiconductor	Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET	Original	PDF
Si4884DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4884DY-T1	Vishay Intertechnology	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF

SI4884 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
S99-041 Abstract: No abstract text available Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S	Original	Si4884DY S99-041--Rev. 04-Oct-99 S99-041	PDF
Si4884DY Abstract: Si4884DY-T1 Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY	Original	Si4884DY Si4884DY-T1 08-Apr-05	PDF
SI4884 Abstract: MS-012AA Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .	Original	SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 18-Jul-08	PDF
Si4884BDY-T1-E3 Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504 Text: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4884BDY Si4884DY Si4884BDY-T1-E3 Si4884DY-T1-E3 Si4884DY-T1 MOSFET 074 73504	PDF
74648 Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY Text: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4884BDY AN609 01-Jun-07 74648 49155 SILICONIX* 9953	PDF
Si4884BDY Abstract: Si4884BDY-T1-E3 Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 25Impedance, S-61089-Rev. 19-Jun-06	PDF
Si4884BDY Abstract: Si4884BDY-T1 Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8	Original	Si4884BDY Si4884BDY-T1--E3 08-Apr-05 Si4884BDY-T1	PDF
Untitled Abstract: No abstract text available Text: SI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI4884 in SOT96-1 SO8 .	Original	SI4884 M3D315 SI4884 OT96-1 OT96-1, MBK187 MBB076	PDF
Si4884DY Abstract: No abstract text available Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS	Original	Si4884DY 18-Jul-08	PDF
74127 Abstract: Si4884BDY Text: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4884BDY 18-Jul-08 74127	PDF
Si4884DY Abstract: No abstract text available Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS	Original	Si4884DY 17-May-04	PDF
Untitled Abstract: No abstract text available Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S	Original	Si4884DY S99-041--Rev. 04-Oct-99	PDF
si4884dy Abstract: No abstract text available Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S	Original	Si4884DY S-61804--Rev. 21-Jun-99	PDF

SI4884DY Abstract: No abstract text available Text: SPICE Device Model SI4884DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	SI4884DY SI4884DY	PDF
Si4884DY Abstract: SOIC-16 Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional	Original	Si4884DY SOIC-16	PDF
Si4884DY Abstract: No abstract text available Text: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4884DY 17-Apr-01	PDF
Si4884DY Abstract: Si4884DY-T1 Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY	Original	Si4884DY Si4884DY-T1 18-Jul-08	PDF
F011 Abstract: F63TNR F852 L86Z Si4884DY SOIC-16 ECT 1C Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional	Original	Si4884DY F011 F63TNR F852 L86Z SOIC-16 ECT 1C	PDF
Si4884BDY Abstract: Si4884BDY-T1-E3 Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized	Original	Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized	Original	Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4884DY Abstract: Si4884DY-T1 Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY	Original	Si4884DY Si4884DY-T1 S-03950--Rev. 26-May-03	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)	OCR Scan	Si4884DY S2SM735 DD17flflT	PDF

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Vishay Siliconix SI4884BDY-T1-E3

Vishay Siliconix SI4884BDY-T1-GE3

Vishay Intertechnologies SI4884BDY-T1-E3

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Vishay Intertechnologies SI4884BDY-T1-GE3

SI4884 Datasheets (12)

SI4884 Datasheets Context Search

S99-041

Si4884DY

SI4884

Untitled

Si4884BDY-T1-E3

74648

Si4884BDY

Si4884BDY

Untitled

Si4884DY

74127

Si4884DY

Untitled

si4884dy

SI4884DY

Si4884DY

Si4884DY

Si4884DY

F011

Si4884BDY

Untitled

Si4884DY

Untitled

Untitled