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    SI4884BDY Search Results

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    SI4884BDY Price and Stock

    Vishay Siliconix SI4884BDY-T1-E3

    MOSFET N-CH 30V 16.5A 8SO
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    DigiKey SI4884BDY-T1-E3 Cut Tape
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    SI4884BDY-T1-E3 Digi-Reel 1
    • 1 $0.86
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    SI4884BDY-T1-E3 Reel
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    RS SI4884BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4884BDY-T1-GE3

    MOSFET N-CH 30V 16.5A 8SO
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    Vishay Intertechnologies SI4884BDY-T1-E3

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    Bristol Electronics SI4884BDY-T1-E3 7,500
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    SI4884BDY-T1-E3 2,398
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    Quest Components SI4884BDY-T1-E3 6,000
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    SI4884BDY-T1-E3 1,323
    • 1 $2.912
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    SI4884BDY-T1-E3 580
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    Vishay Intertechnologies SI4884BDY-T1-GE3

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    Bristol Electronics SI4884BDY-T1-GE3 2,421
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    SI4884BDY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4884BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF
    SI4884BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF

    SI4884BDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		Si4884BDY Si4884BDY-T1-E3 18-Jul-08 PDF

    Si4884BDY-T1-E3

    Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504
    Text: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si4884BDY Si4884DY Si4884BDY-T1-E3 Si4884DY-T1-E3 Si4884DY-T1 MOSFET 074 73504 PDF

    74648

    Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY
    Text: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4884BDY AN609 01-Jun-07 74648 49155 SILICONIX* 9953 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		Si4884BDY Si4884BDY-T1-E3 25Impedance, S-61089-Rev. 19-Jun-06 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1
    Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		Si4884BDY Si4884BDY-T1--E3 08-Apr-05 Si4884BDY-T1 PDF

    74127

    Abstract: Si4884BDY
    Text: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4884BDY 18-Jul-08 74127 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		Si4884BDY Si4884BDY-T1 08-Apr-05 PDF

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		Si4884BDY Si4884BDY-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		Si4884BDY Si4884BDY-T1--E3 51450--Rev. 01-Aug-05 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS PDF