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Vishay Siliconix SI4884BDY-T1-E3 MOSFET N-CH 30V 16.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4884BDY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4884BDY-T1-E3	Digi-Reel			1	1 $0.86 10 $0.86 100 $0.86 1000 $0.86 10000 $0.86	Buy Now
	SI4884BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI4884BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.51	Get Quote
Vishay Siliconix SI4884BDY-T1-GE3 MOSFET N-CH 30V 16.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4884BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4884BDY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4884BDY-T1-E3		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4884BDY-T1-E3		2,398			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4884BDY-T1-E3		6,000			1 $3.4944 10 $3.4944 100 $3.4944 1000 $1.3104 10000 $1.3104	Buy Now
	SI4884BDY-T1-E3		1,323			1 $2.912 10 $2.912 100 $2.912 1000 $1.092 10000 $1.092	Buy Now
	SI4884BDY-T1-E3		580			1 $3.4944 10 $3.4944 100 $3.4944 1000 $1.4414 10000 $1.4414	Buy Now
Vishay Intertechnologies SI4884BDY-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4884BDY-T1-GE3		2,421			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4884BDY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4884BDY		Vishay Siliconix	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4884BDY-T1		Vishay Siliconix	N-Channel 30-V (D-S) MOSFET		Original	PDF
SI4884BDY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC		Original	PDF
SI4884BDY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC		Original	PDF

SI4884BDY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 18-Jul-08	PDF
Si4884BDY-T1-E3 Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504 Text: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4884BDY Si4884DY Si4884BDY-T1-E3 Si4884DY-T1-E3 Si4884DY-T1 MOSFET 074 73504	PDF
74648 Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY Text: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4884BDY AN609 01-Jun-07 74648 49155 SILICONIX* 9953	PDF
Si4884BDY Abstract: Si4884BDY-T1-E3 Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 25Impedance, S-61089-Rev. 19-Jun-06	PDF
Si4884BDY Abstract: Si4884BDY-T1 Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8	Original	Si4884BDY Si4884BDY-T1--E3 08-Apr-05 Si4884BDY-T1	PDF
74127 Abstract: Si4884BDY Text: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4884BDY 18-Jul-08 74127	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8	Original	Si4884BDY Si4884BDY-T1 08-Apr-05	PDF
Si4884BDY Abstract: Si4884BDY-T1-E3 Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized	Original	Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized	Original	Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8	Original	Si4884BDY Si4884BDY-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8	Original	Si4884BDY Si4884BDY-T1--E3 51450--Rev. 01-Aug-05	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF