Datasheet Archive: SI4838BDY datasheets

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Vishay Siliconix SI4838BDY-T1-GE3 MOSFET N-CH 12V 34A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4838BDY-T1-GE3	Digi-Reel	2,140		1	1 $2.17 10 $1.389 100 $2.17 1000 $0.68962 10000 $0.68962	Buy Now
	SI4838BDY-T1-GE3	Cut Tape	2,140		1	1 $2.17 10 $1.389 100 $2.17 1000 $0.68962 10000 $0.68962	Buy Now
	SI4838BDY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.5875	Buy Now
ES Components	SI4838BDY-T1-GE3					1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	SI4838BDY-T1-GE3		2,500		1	1 - 10 - 100 - 1000 - 10000 $0.7526	Buy Now
Vishay Intertechnologies SI4838BDY-T1-GE3 N-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI4838BDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4838BDY-T1-GE3	Reel	2,500	18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.44424	Buy Now
Mouser Electronics	SI4838BDY-T1-GE3		4,517			1 $2.12 10 $1.37 100 $0.931 1000 $0.677 10000 $0.587	Buy Now
Newark	SI4838BDY-T1-GE3	Bulk	3,404		1	1 $2.09 10 $1.41 100 $1.01 1000 $0.837 10000 $0.837	Buy Now
Bristol Electronics	SI4838BDY-T1-GE3		26			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SI4838BDY-T1-GE3	Reel	10,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.588	Buy Now

EBV Elektronik	SI4838BDY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4838BDY-T1-GE3. Mosfet, N Channel, 12V, 34A, Soic-8, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:5.7W Rohs Compliant: Yes \|Vishay SI4838BDY-T1-GE3.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI4838BDY-T1-GE3.	Reel	2,500		2,500	1 $0.588 10 $0.588 100 $0.588 1000 $0.588 10000 $0.588	Buy Now
Vishay Intertechnologies SI4838DY-T1-E3 MOSFETs RECOMMENDED ALT SI48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SI4838DY-T1-E3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.38	Buy Now
Others SI4838BDYT1GE3 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4838BDYT1GE3		1,875			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4838BDY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4838BDY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 34A 8-SOIC		Original	PDF

SI4838BDY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si4838BDY Abstract: 00031 SI4838DY-T1-E3 Si4838DY Text: Specification Comparison Vishay Siliconix Si4838BDY vs. Si4838DY Description: Package: Pin Out: N-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4838BDY-T1-GE3 replaces Si4838DY-T1-E3 Si4838BDY-T1-GE3 replaces Si4838DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si4838BDY Si4838DY Si4838BDY-T1-GE3 Si4838DY-T1-E3 Si4838DY-T1-GE3 04-Nov-08 00031	PDF
Untitled Abstract: No abstract text available Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 ID (A)a RDS(on) (Ω) 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4838BDY Abstract: 68964 Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 11-Mar-11 68964	PDF
Untitled Abstract: No abstract text available Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
82546 Abstract: Si4838BDY Text: SPICE Device Model Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si4838BDY 18-Jul-08 82546	PDF
m 51473 Abstract: AN609 Si4838BDY Text: Si4838BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4838BDY AN609, 02-Oct-08 m 51473 AN609	PDF
Untitled Abstract: No abstract text available Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4838BDY www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4838BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4838BDY Abstract: No abstract text available Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	Si4838BDY Si4838BDY-T1-GE3 18-Jul-08	PDF
SILEGO Abstract: FET marking code MARKING CODE FET SLG55031V Text: SLG55031/032/033 GreenFETTM High Voltage Gate Driver Features Applications • Drain Voltage Range 0.7V to 1.5V • Low Transient Load Switching • Controlled Load Discharge Rate • Personal computers and Servers • Controlled Turn on Slew Rate • Hot Plugging Applications	Original	SLG55031/032/033 SLG5503x SLG55031 SLG55031/32/33 SILEGO FET marking code MARKING CODE FET SLG55031V	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF

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Vishay Siliconix SI4838BDY-T1-GE3

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SI4838BDY Datasheets (1)

SI4838BDY Datasheets Context Search

Si4838BDY

Untitled

Si4838BDY

Untitled

82546

m 51473

Untitled

Untitled

Untitled

Si4838BDY

SILEGO

si7121

Diode SOT-23 marking 15d