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    Littelfuse Inc 868-964

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    Phoenix Contact 1689640

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    TE Connectivity 768964-1

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    68964 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 ID (A)a RDS(on) (Ω) 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4838BDY

    Abstract: 68964
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 11-Mar-11 68964 PDF

    13001 TRANSISTOR

    Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
    Text: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		ENN6896A 2SC5690 2SC5690] 13001 TRANSISTOR transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087 PDF

    epcos NTC Thermistor S 234

    Abstract: icl 7669 NTC 4,7 1235 Thermistors EPCOS ntc k45 ntc b57045 k45 47056 B57045K0104K000 B57045K0682K000 M 47056 B57045K0473K000
    Text: NTC thermistors for temperature measurement Probe assemblies Series/Type: Date: B57045 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57045 epcos NTC Thermistor S 234 icl 7669 NTC 4,7 1235 Thermistors EPCOS ntc k45 ntc b57045 k45 47056 B57045K0104K000 B57045K0682K000 M 47056 B57045K0473K000 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    epcos 565-2

    Abstract: epcos 4215 565-2 EPCOS 627000 icl 2822 TH 2053.3 121800 246770 44568 transistor g 10597
    Text: NTC thermistors for temperature measurement Leaded NTCs, lead spacing 2.5 mm Series/Type: Date: B57891 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57891 E69802) epcos 565-2 epcos 4215 565-2 EPCOS 627000 icl 2822 TH 2053.3 121800 246770 44568 transistor g 10597 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 11-Mar-11 PDF

    13001 TRANSISTOR

    Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
    Text: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


    Original     		ENN6896 2SC5690 2SC5690] 13001 TRANSISTOR 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    NTC 4,7 1235 Thermistors EPCOS

    Abstract: K164 B57164K0103J000 icl 7103 B57164K0682k000 B57164K0104J000 38957 ICL 7108 NTC 1000-9 18526
    Text: NTC thermistors for temperature measurement Leaded NTCs, lead spacing 5 mm Series/Type: Date: B57164 March 2006 EPCOS AG 2006. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


    Original     		B57164 NTC 4,7 1235 Thermistors EPCOS K164 B57164K0103J000 icl 7103 B57164K0682k000 B57164K0104J000 38957 ICL 7108 NTC 1000-9 18526 PDF

    Si4838BDY

    Abstract: No abstract text available
    Text: New Product Si4838BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0027 at VGS = 4.5 V 34 0.0032 at VGS = 2.5 V 31 0.0040 at VGS = 1.8 V 28 VDS (V) 12 Qg (Typ.) 33 nC • • • • Halogen-free TrenchFET Power MOSFET


    Original     		Si4838BDY Si4838BDY-T1-GE3 18-Jul-08 PDF

    744049

    Abstract: 642639E 30359 362610E 707001E 740417 543301E-3 43403 32240 74127
    Text: S-Parameter Narrow RF1400D 03/09/04 # HZ S RI R 50 431420000. .658264E+0 .485841E-3 .637421E+0 431432500. .657867E+0 .502661E-3 .636993E+0 431445000. .657623E+0 .505368E-3 .636780E+0 431457500. .657440E+0 .524466E-3 .636536E+0 431470000. .657166E+0 .540092E-3 .636475E+0


    Original     		RF1400D 658264E 485841E-3 637421E 657867E 502661E-3 636993E 657623E 505368E-3 636780E 744049 642639E 30359 362610E 707001E 740417 543301E-3 43403 32240 74127 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .


    OCR Scan     		ENN6896 2SC5690 2SC5690] PDF