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    SI4435 Search Results

    SI4435 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4435BDY Vishay TRANSISTOR, P-CHANNEL MOSFET, 30V, SOIC-8 Original PDF
    SI4435BDY Vishay Siliconix MOSFETs Original PDF
    Si4435BDY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    Si4435BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4435BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7A 8-SOIC Original PDF
    SI4435DDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8SOIC Original PDF
    SI4435DDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 11.4A 8-SOIC Original PDF
    Si4435DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4435DY Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DY International Rectifier HEXFET Power MOSFET Original PDF
    SI4435DY Kexin P-Channel MOSFET Original PDF
    Si4435DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4435DY International Rectifier HEXFET Power MOSFET Scan PDF
    SI4435DY_NF073 Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DY_NL Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    SI4435DYPBF International Rectifier HEXFET Power MOSFET Original PDF
    SI4435DY-REVA Vishay Telefunken P-Channel 30-V (D-S) MOSFET Original PDF
    SI4435DY-REVA Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8 Scan PDF
    Si4435DY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4435DYTR International Rectifier -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
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    SI4435 Price and Stock

    onsemi SI4435DY

    MOSFET P-CH 30V 8.8A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435DY Reel 40,000 2,500
    • 1 -
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    • 10000 $0.38418
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    SI4435DY Cut Tape 615 1
    • 1 $0.98
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    Avnet Americas SI4435DY Reel 16 Weeks 2,500
    • 1 -
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    • 10000 $0.40964
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    SI4435DY Reel 16 Weeks 2,500
    • 1 -
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    • 10000 $0.40964
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    Mouser Electronics SI4435DY 14,660
    • 1 $0.89
    • 10 $0.699
    • 100 $0.614
    • 1000 $0.429
    • 10000 $0.366
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    TME SI4435DY 2,093 1
    • 1 $1.411
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    • 100 $0.57
    • 1000 $0.532
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    Avnet Asia SI4435DY 16 Weeks 2,500
    • 1 -
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    Infineon Technologies AG SI4435DYTRPBF

    MOSFET P-CH 30V 8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435DYTRPBF Reel 36,000 4,000
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    SI4435DYTRPBF Cut Tape 4,968 1
    • 1 $0.99
    • 10 $0.807
    • 100 $0.6278
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    SI4435DYTRPBF Digi-Reel 1
    • 1 $0.99
    • 10 $0.807
    • 100 $0.6278
    • 1000 $0.43349
    • 10000 $0.40808
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    Avnet Americas SI4435DYTRPBF Reel 12 Weeks 4,000
    • 1 -
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    SI4435DYTRPBF Ammo Pack 16 Weeks, 3 Days 1
    • 1 $1.03
    • 10 $0.839
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    Mouser Electronics SI4435DYTRPBF 7,316
    • 1 $0.97
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    Arrow Electronics SI4435DYTRPBF 20,000 12 Weeks 4,000
    • 1 -
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    SI4435DYTRPBF Cut Strips 2,322 12 Weeks 1
    • 1 $0.8581
    • 10 $0.6996
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    Bristol Electronics SI4435DYTRPBF 10
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    TME SI4435DYTRPBF 219 1
    • 1 $0.93
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    New Advantage Corporation SI4435DYTRPBF 8,000 1
    • 1 -
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    Vishay Siliconix SI4435FDY-T1-GE3

    MOSFET P-CH 30V 12.6A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435FDY-T1-GE3 Reel 30,000 2,500
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.1212
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    SI4435FDY-T1-GE3 Cut Tape 4,062 1
    • 1 $0.47
    • 10 $0.364
    • 100 $0.2182
    • 1000 $0.13736
    • 10000 $0.13736
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    New Advantage Corporation SI4435FDY-T1-GE3 5,000 1
    • 1 -
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    • 100 -
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    • 10000 $0.1323
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    Vishay Siliconix SI4435DDY-T1-GE3

    MOSFET P-CH 30V 11.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435DDY-T1-GE3 Reel 25,000 2,500
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    SI4435DDY-T1-GE3 Cut Tape 769 1
    • 1 $0.72
    • 10 $0.624
    • 100 $0.4318
    • 1000 $0.30704
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    SI4435DDY-T1-GE3 Digi-Reel 1
    • 1 $0.72
    • 10 $0.624
    • 100 $0.4318
    • 1000 $0.30704
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    New Advantage Corporation SI4435DDY-T1-GE3 110,000 1
    • 1 -
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    • 100 -
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    • 10000 $0.3071
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    Vishay Siliconix SI4435DDY-T1-E3

    MOSFET P-CH 30V 11.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4435DDY-T1-E3 Reel 5,000 2,500
    • 1 -
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    • 10000 $0.25906
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    SI4435DDY-T1-E3 Cut Tape 2,872 1
    • 1 $0.72
    • 10 $0.624
    • 100 $0.4318
    • 1000 $0.30704
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    New Advantage Corporation SI4435DDY-T1-E3 5,000 1
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    Find more SI4435 price and stock on Findchips.com

    SI4435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    7w66

    Abstract: Si4435DY D665
    Text: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4435DY 7w66 D665

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: No abstract text available
    Text: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-47958--Rev. 15-Apr-96

    SI4435BDY-T1

    Abstract: Si4435BDY
    Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS


    Original     		PDF Si4435BDY Si4435BDY-T1 Si4435BDY-T1--E3 08-Apr-05

    SI4435DY

    Abstract: AN609 74549N
    Text: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4435DY AN609 31-Aug-05 74549N

    Si4435DDY

    Abstract: Si4435DDY-T1-E3 Si4435DDY-T1-GE3
    Text: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4435DDY 2002/95/EC Si4435DDY-T1-E3 Si4435DDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4435DDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4435DDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S-49534

    Abstract: Si4435DY
    Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-49534--Rev. 06-Oct-97 S-49534

    IRF7101

    Abstract: Si4435DYPbF
    Text: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from


    Original     		PDF Si4435DYPbF EIA-481 EIA-541. IRF7101

    S-49534

    Abstract: Si4435DY
    Text: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4435DY S-49534--Rev. 06-Oct-97 S-49534

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si9430DY

    Abstract: Si4435DY Si4953DY Si6435DQ
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9435DY
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96

    Si4435DY

    Abstract: Si4953DY Si6435DQ Si9430DY
    Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96

    Si4435BDY

    Abstract: No abstract text available
    Text: Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.020 @ VGS = −10 V −9.1 0.035 @ VGS = −4.5 V −6.9 D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS


    Original     		PDF Si4435BDY Si4435BDY-T1 Si4435BDY-T1--E3 18-Jul-08

    Si4435DY

    Abstract: si4435
    Text: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF SI4435DY Si4435DY si4435

    PL504

    Abstract: PQ508 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518
    Text: PQ508 SI4435DY PD509 A PL1 A 1 2 6 VADJ_1 5 PQ1B NDC7002N 1 2 VADJ_2 5 PR9 1M 0603 1% 1 2 1 PQ1A NDC7002N 2 2 1 PR6 1M 0603 1% 1 PR7 1M 0603 1% 2 1M 0603 1% 1 PR3 34K 0603 1% PR507 34K 0603 1% 2 PR2 2 PR4 10K 0603B 1% 1 1 1 PC6 1000P 0603B 10%,X7R 2 PR508


    Original     		PDF PQ508 SI4435DY 80UH/33T/D PD506 SFPJ-73 DC2010 PR517 PC524 PL504 PC525 PR521 PC515 PD510 PC523 RLZ20C mitac 6120 PR518

    Si4435BDY

    Abstract: si4435
    Text: SPICE Device Model Si4435BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4435BDY 18-Jul-08 si4435

    SI4435DY

    Abstract: SI4435DY-T1
    Text: Si4435DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V –8.0 0.035 @ VGS = –4.5 V –6.0 D Lead (Pb)-Free Version is RoHS Compliant S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G


    Original     		PDF Si4435DY Si4435DY-T1 18-Jul-08

    AN609

    Abstract: Si4435DDY
    Text: Si4435DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4435DDY AN609, 30-Jul-08 AN609

    PR40

    Abstract: js27 C598 BKLVMAIN SFPJ-73 JS11
    Text: 1 2 3 4 5 6 7 8 1 1 PD2 SFPJ-73 DC2010 EMI2 24 ADINP PL1 BEAD_120Z/100M_6A 2012 26,27 D_VMAIN PR40 100K 0603 VMAIN JO5 D_VMAIN 26,27 OPEN-SMT4_DFS S VDD5 PQ505 SI4435DY SO8 PR35 261K_1% 0603 JS10 R170 100K 0603 GND R551 33K 0603 D_VMAIN 26,27 19 BKL_VMAIN


    Original     		PDF SFPJ-73 DC2010 120Z/100M PC501 PQ506 DTC144WK PQ507 2N7002 LMV393 2N7002 PR40 js27 C598 BKLVMAIN JS11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4435DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.024 at VGS = - 10 V - 11.4 0.035 at VGS = - 4.5 V - 9.4 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4435DDY 2002/95/EC Si4435DDY-T1-E3 Si4435DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12