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    IRF7101 Price and Stock

    Infineon Technologies AG IRF7101PBF

    MOSFET 2N-CH 20V 3.5A 8SO
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    DigiKey IRF7101PBF Tube
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    Win Source Electronics IRF7101PBF 46,000
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    Infineon Technologies AG IRF7101TRPBF

    MOSFET 2N-CH 20V 3.5A 8SO
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    DigiKey IRF7101TRPBF Reel
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    RS IRF7101TRPBF Bulk 20
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    TME IRF7101TRPBF 4,000
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    Win Source Electronics IRF7101TRPBF 46,000
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    IOR Corporation IRF7101

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    Bristol Electronics IRF7101 222
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    International Rectifier IRF7101

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    Bristol Electronics IRF7101 124
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    Quest Components IRF7101 143
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    IRF7101 24
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    IRF7101 14
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    Win Source Electronics IRF7101 45,940
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    International Rectifier IRF7101PBF

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    Bristol Electronics IRF7101PBF 58
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    ComSIT USA IRF7101PBF 1,130
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    Find more IRF7101 price and stock on Findchips.com

    IRF7101 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7101 International Rectifier HEXFET Power MOSFET Original PDF
    IRF7101 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF7101 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, Dual N-Channel, Logic Level, 20V, 3.5A, Pkg Style SO-8 Scan PDF
    IRF7101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF7101 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF7101PBF International Rectifier Original PDF
    IRF7101TR International Rectifier 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Original PDF
    IRF7101TR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF7101TRPBF International Rectifier Original PDF

    IRF7101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-541

    Abstract: IRF7101 MS-012AA
    Text: PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3


    Original     		PDF IRF7101PbF EIA-481 EIA-541. EIA-541 IRF7101 MS-012AA

    IRF7101

    Abstract: MS-012AA
    Text: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V


    Original     		PDF IRF7101 IRF7101 MS-012AA

    EIA-541

    Abstract: IRF7101 MS-012AA
    Text: IRF7101PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time


    Original     		PDF IRF7101PbF EIA-481 EIA-541. EIA-541 IRF7101 MS-012AA

    IRF7101

    Abstract: MS-012AA GD 1 H-010
    Text: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V


    Original     		PDF IRF7101 IRF7101 MS-012AA GD 1 H-010

    Untitled

    Abstract: No abstract text available
    Text: IRF7101 Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)3.5# I(DM) Max. (A) Pulsed I(D)2.3 @Temp (øC)100 IDM Max (@25øC Amb)14# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF7101

    Untitled

    Abstract: No abstract text available
    Text: TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277 – MARCH 2000 features D D D D D D D D D D D OR PW PACKAGE TOP VIEW Single-Channel High-Side MOSFET Driver Input Voltage: 3 V to 13 V Inrush Current Limiting With dv/dt Control


    Original     		PDF TPS2330, TPS2331 SLVS277 14-Pin

    TPS2300

    Abstract: TPS2300IPW TPS2301 TPS2301IPW TPS2310IPW TPS2311IPW TPS2320IPW TPS2330IPW
    Text: TPS2300, TPS2301 DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS265D – FEBRUARY 2000 – REVISED MARCH 2001 PW PACKAGE TOP VIEW features D D D D D D D D D D Dual-Channel High-Side MOSFET Drivers 1 20 DISCH1


    Original     		PDF TPS2300, TPS2301 SLVS265D TPS2300 TPS2300IPW TPS2301 TPS2301IPW TPS2310IPW TPS2311IPW TPS2320IPW TPS2330IPW

    TPS2300IPW

    Abstract: TPS2301IPW TPS2310 TPS2310IPW TPS2311 TPS2311IPW TPS2320IPW TPS2330IPW
    Text: TPS2310, TPS2311 DUAL HOT SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS275D – FEBRUARY 2000 – REVISED MARCH 2001 PW PACKAGE TOP VIEW features D D D D D D D D D D Dual-Channel High-Side MOSFET Drivers 1 20 DISCH1


    Original     		PDF TPS2310, TPS2311 SLVS275D TPS2300IPW TPS2301IPW TPS2310 TPS2310IPW TPS2311 TPS2311IPW TPS2320IPW TPS2330IPW

    TPS2300IPW

    Abstract: TPS2310IPW TPS2320ID TPS2320IPW TPS2330 TPS2330ID TPS2330IPW TPS2331 TPS2331IPWRG4
    Text: TPS2330 TPS2331 www.ti.com . SLVS277F – MARCH 2000 – REVISED NOVEMBER 2006 SINGLE HOT-SWAP POWER CONTROLLERS WITH


    Original     		PDF TPS2330 TPS2331 SLVS277F 14-Pin TPS2300IPW TPS2310IPW TPS2320ID TPS2320IPW TPS2330 TPS2330ID TPS2330IPW TPS2331 TPS2331IPWRG4

    ic 94101

    Abstract: innovative dro IRF7342D2
    Text: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V


    Original     		PDF IRF7342D2 ic 94101 innovative dro IRF7342D2

    F7101

    Abstract: IRF7101 IRF7311 MS-012AA
    Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 91435C IRF7311 F7101 IRF7101 IRF7311 MS-012AA

    IRF7476

    Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
    Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance


    Original     		PDF IRF7476 EIA-481 IA-541. IRF7476 TH 2190 mosfet F7101 IRF7101 MS-012AA

    IRF8113

    Abstract: F7101 IRF7101
    Text: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


    Original     		PDF IRF8113 EIA-481 EIA-541. IRF8113 F7101 IRF7101

    IRF 4310

    Abstract: F7101 IRF7101 IRF7832
    Text: PD - 94594A IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS


    Original     		PDF 4594A IRF7832 EIA-481 EIA-541. IRF 4310 F7101 IRF7101 IRF7832

    MS-012AA

    Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
    Text: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See


    Original     		PDF IRF7491 AN1001) MS-012AA AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free


    Original     		PDF IRF7309PbF-1 IRF7309TRPr D-020D

    Untitled

    Abstract: No abstract text available
    Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package


    Original     		PDF IRF7425PbF-1 IRF7425Pefer D-020D

    Untitled

    Abstract: No abstract text available
    Text: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques


    Original     		PDF IRF7416PbF-1 IRF7416TRPbF-1 TD-020D

    Untitled

    Abstract: No abstract text available
    Text: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented


    Original     		PDF 91746D IRF7805 IRF7805 EIA-481 EIA-541.

    f7101

    Abstract: MOSFET IRF7101 f-7101 MS-012AA
    Text: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER


    OCR Scan     		PDF MS-012AA) IRF7101 F7101 f7101 MOSFET IRF7101 f-7101 MS-012AA

    IRF7101

    Abstract: No abstract text available
    Text: P D -9.871 B International IQ R Rectifier IRF7101 HEXFET Power MOSFET • • • • Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount • Available in Tape and Reel • Dynamic dv/dt Rating • Fast Switching V dss = 20V


    OCR Scan     		PDF IRF7101 IRF7101

    IRF7101

    Abstract: No abstract text available
    Text: Part Marking EXAM PLE: THIS IS AN IRF7101 D ATE CODE YWW Y = WW = IN T E R N A T IO N A L REC TIFIER LOGO L A S T DIGIT OF THE Y E A R WEEK LO T CODE y y y y P A R T N U M B ER


    OCR Scan     		PDF IRF7101

    Untitled

    Abstract: No abstract text available
    Text: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H


    OCR Scan     		PDF IRF7101 GGEbH72 5545E