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    SI64 Price and Stock

    Vishay Siliconix SI6423DQ-T1-GE3

    MOSFET P-CH 12V 8.2A 8TSSOP
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    DigiKey SI6423DQ-T1-GE3 Cut Tape 6,778 1
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    • 10 $1.601
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    SI6423DQ-T1-GE3 Digi-Reel 6,778 1
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    • 1000 $0.80852
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    SI6423DQ-T1-GE3 Reel 6,000 3,000
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    New Advantage Corporation SI6423DQ-T1-GE3 18,000 1
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    Vishay Siliconix SI6415DQ-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI6415DQ-T1-BE3 Digi-Reel 6,000 1
    • 1 $2.58
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    • 1000 $0.87908
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    SI6415DQ-T1-BE3 Cut Tape 6,000 1
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    Vishay Siliconix SI6423ADQ-T1-GE3

    MOSFET PCH 20V 10.3/12.5A 8TSSOP
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    DigiKey SI6423ADQ-T1-GE3 Reel 5,950 3,000
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    SI6423ADQ-T1-GE3 Digi-Reel 5,950 1
    • 1 $1.45
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    • 1000 $0.43456
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    SI6423ADQ-T1-GE3 Cut Tape 5,950 1
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    • 10 $0.917
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    Vishay Siliconix SI6415DQ-T1-GE3

    MOSFET P-CH 30V 6.5A 8TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI6415DQ-T1-GE3 Digi-Reel 5,122 1
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    SI6415DQ-T1-GE3 Cut Tape 5,122 1
    • 1 $2.58
    • 10 $1.665
    • 100 $2.58
    • 1000 $0.84441
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    SI6415DQ-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI6423DQ-T1-BE3

    P-CHANNEL 12-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI6423DQ-T1-BE3 Digi-Reel 2,936 1
    • 1 $2.49
    • 10 $1.601
    • 100 $2.49
    • 1000 $0.80852
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    SI6423DQ-T1-BE3 Cut Tape 2,936 1
    • 1 $2.49
    • 10 $1.601
    • 100 $2.49
    • 1000 $0.80852
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    Find more SI64 price and stock on Findchips.com

    SI64 Datasheets (165)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si6404DQ Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI6404DQ Vishay Siliconix MOSFETs Original PDF
    Si6404DQ-E3 Vishay Transistor Mosfet N-CH 30V 8.6A 8TSSOP Original PDF
    SI6404DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8.6A 8TSSOP Original PDF
    SI6404DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 8.6A 8TSSOP Original PDF
    SI6405DQ Vishay Siliconix MOSFETs Original PDF
    SI6405DQ Vishay Telefunken P-channel 12-v (d-s) Mosfet Original PDF
    Si6405DQ-E3 Vishay Transistor Mosfet P-CH 12V 7.3A 8TSSOP Original PDF
    Si6405DQ-T1-E3 Vishay Transistor Mosfet P-CH 12V 7.3A 8TSSOP REEL Original PDF
    SI6410DQ Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF
    Si6410DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6410DQ Vishay Transistor Mosfet N-CH 30V 7.8A 8TSSOP Original PDF
    Si6410DQ Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI6410DQ-T1 Vishay Transistor Mosfet N-CH 30V 7.8A 8TSSOP REEL Original PDF
    SI6410DQ-T1 Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SI6410DQ-T1-E3 Vishay Transistor Mosfet N-CH 30V 7.8A 8TSSOP REEL Original PDF
    SI6410DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.8A 8-TSSOP Original PDF
    SI6410DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.8A 8-TSSOP Original PDF
    SI6411DQ Vishay Siliconix MOSFETs Original PDF
    Si6411DQ-E3 Vishay Transistor Mosfet P-CH 20V 7.5A 8TSSOP Original PDF
    ...

    SI64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si6463BDQ

    Abstract: No abstract text available
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		PDF Si6463BDQ Si6459BDQ-T1-GE3 08-Apr-05

    72511

    Abstract: Si6433BDQ
    Text: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7


    Original     		PDF Si6433BDQ Si6433BDQ-T1-GE3 11-Mar-11 72511

    Si6463BDQ

    Abstract: No abstract text available
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si6475DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 4.5 V - 10 - 12 0.0135 at VGS = - 2.5 V -9 0.017 at VGS = - 1.8 V -8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S*


    Original     		PDF Si6475DQ Si6475DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


    Original     		PDF Si6441DQ Si6441DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si6435ADQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si6435ADQ S-52526Rev. 12-Dec-05

    Si6423DQ

    Abstract: Si6423DQ-T1
    Text: Si6423DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0085 @ VGS = - 4.5 V - 9.5 0.0106 @ VGS = - 2.5 V - 8.5 0.014 @ VGS = - 1.8 V - 7.5 APPLICATIONS D Load Switch


    Original     		PDF Si6423DQ Si6423DQ-T1 08-Apr-05

    Si6466ADQ

    Abstract: S-00984
    Text: Si6466ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6466ADQ * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6466ADQ S-00984--Rev. 15-May-00 S-00984

    Si6475DQ

    Abstract: No abstract text available
    Text: Si6475DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –10 –12 12 0.0135 @ VGS = –2.5 V –9 0.017 @ VGS = –1.8 V –8 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6475DQ


    Original     		PDF Si6475DQ S-01889--Rev. 28-Aug-00

    Si6435DQ

    Abstract: 2502P CBHK741B019 F63TNR FDW2502P
    Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF Si6435DQ 2502P CBHK741B019 F63TNR FDW2502P

    MOSFET TSSOP-8

    Abstract: SI6410DQ
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MOSFET TSSOP-8

    S-49534

    Abstract: Si6435DQ
    Text: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6435DQ S-49534--Rev. 06-Oct-97 S-49534

    Si64

    Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
    Text: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S


    Original     		PDF Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94

    Si6447DQ

    Abstract: No abstract text available
    Text: Si6447DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.09 @ VGS = -10 V "3.2 0.16 @ VGS = -4.5 V "2.4 S* TSSOPĆ8 D S S G 1 2 D 3 8 Si6447DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6447DQ S42910Rev.

    Si6447DQ

    Abstract: No abstract text available
    Text: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6447DQ S-47958--Rev. 15-Apr-96

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6459DQ G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original     		PDF Si6459DQ S-47966--Rev. 22-Jul-96

    si6465

    Abstract: No abstract text available
    Text: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		PDF Si6465DQ Si6465DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si6465

    Si6463ADQ

    Abstract: Si6463ADQ-T1 Si6463BDQ
    Text: Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463ADQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6463BDQ-T1 Replaces Si6463ADQ-T1 Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1


    Original     		PDF Si6463BDQ Si6463ADQ Si6463BDQ-T1 Si6463ADQ-T1 Si6463BDQ-T1-E3 09-Nov-06

    Si6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6410DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original     		PDF Si6410DQ S-56945--Rev. 23-Nov-98

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original     		PDF Si6459DQ S-99446--Rev. 29-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original     		PDF Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 8.8 0.019 at VGS = - 4.5 V - 7.0 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Battery Switch


    Original     		PDF Si6443DQ Si6443DQ-T1-GE3 08-Apr-05

    SI6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D


    Original     		PDF Si6410DQ Si6410DQ-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si6434DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±5.6 0.042 @VGs = 4.5 V ±4.5 D O TSSOP-8 D S S D Si6434DQ *Source Pins 2, 3, 6 and 7 must be tied common. Top View 6 s*


    OCR Scan     		PDF Si6434DQ S-49534â 06-Oct-97