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    SI4214 Search Results

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    SI4214 Price and Stock

    Vishay Siliconix SI4214DDY-T1-GE3

    MOSFET 2N-CH 30V 8.5A 8SOIC
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    DigiKey SI4214DDY-T1-GE3 Reel 17,500 2,500
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    SI4214DDY-T1-GE3 Cut Tape 709 1
    • 1 $0.66
    • 10 $0.574
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    SI4214DDY-T1-GE3 Digi-Reel 1
    • 1 $0.66
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    New Advantage Corporation SI4214DDY-T1-GE3 22,500 1
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    Vishay Siliconix SI4214DDY-T1-E3

    MOSFET 2N-CH 30V 8.5A 8SOIC
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    DigiKey SI4214DDY-T1-E3 Cut Tape 2,322 1
    • 1 $0.92
    • 10 $0.798
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    • 1000 $0.39269
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    SI4214DDY-T1-E3 Reel 2,500
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    SI4214DDY-T1-E3 Digi-Reel 1
    • 1 $0.92
    • 10 $0.798
    • 100 $0.5522
    • 1000 $0.39269
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    Vishay Siliconix SI4214DY-T1-GE3

    MOSFET 2N-CH 30V 8.5A 8SOIC
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    DigiKey SI4214DY-T1-GE3 Cut Tape
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    SI4214DY-T1-GE3 Reel
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    SI4214DY-T1-GE3 Digi-Reel 1
    • 1 $0.66
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    Vishay Intertechnologies SI4214DDY--T1-GE3

    Transistor MOSFET Array Dual N-CH 30V 8.5A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4214DDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4214DDY--T1-GE3 Reel 7,500 16 Weeks 2,500
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    SI4214DDY--T1-GE3 Reel 16 Weeks 2,500
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    Vishay Intertechnologies SI4214DDY-T1-E3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4214DDY-T1-E3)
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    Avnet Americas SI4214DDY-T1-E3 Reel 16 Weeks 2,500
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    Mouser Electronics SI4214DDY-T1-E3 18,251
    • 1 $0.92
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    • 100 $0.553
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    TTI SI4214DDY-T1-E3 Reel 2,500
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    SI4214 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4214DDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.5A SO8 Original PDF
    SI4214DDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.5A 8-SOIC Original PDF
    SI4214DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 8.5A 8-SOIC Original PDF

    SI4214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DY 2002/95/EC Si4214DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4214DY

    Abstract: 785 spice
    Text: SPICE Device Model Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    PDF Si4214DY 18-Jul-08 785 spice

    Si4214DDY

    Abstract: SI4214DD si4214
    Text: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 18-Jul-08 SI4214DD si4214

    SI4214DDY

    Abstract: SI4214DD
    Text: SPICE Device Model Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original
    PDF Si4214DDY 18-Jul-08 SI4214DD

    65256

    Abstract: AN609 Si4214DDY
    Text: Si4214DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4214DDY AN609, 21-Jul-09 65256 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4214DDY-T1-E3 2002/95/EC 11-Mar-11

    MOSFET 2301

    Abstract: 18-1122 8439 c 5929 transistor AN609
    Text: Si4214DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si4214DY AN609, 06-Feb-09 MOSFET 2301 18-1122 8439 c 5929 transistor AN609

    si4214

    Abstract: Si4214DDY-T1-E3 SI4214DD si42
    Text: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4214DDY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4214 SI4214DD si42

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original
    PDF Si4214DDY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DY 2002/95/EC Si4214DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4214DDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET


    Original
    PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 11-Mar-11

    diode 18B

    Abstract: No abstract text available
    Text: New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 8.5 0.028 at VGS = 4.5 V 7.8 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4214DY 2002/95/EC Si4214DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 diode 18B

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1555C LTC4365/LTC4365-1: Overvoltage, Undervoltage and Reverse Supply Protection Controller Description Demonstration circuit DC1555C is intended to demonstrate the performance of the LTC4365 and LTC4365-1 Undervoltage, Overvoltage and Reverse Supply Protection


    Original
    PDF DC1555C LTC4365/LTC4365-1: DC1555C LTC4365 LTC4365-1 4365/LTC4365-1 dc1555cfb

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original
    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Tablet

    Abstract: SI4925
    Text: Tablet Table of Contents Audio Subsystem, Audio Codec. 3 Display, Ambient Light Sensors. 4


    Original
    PDF SI4214DDY-T1-GE3 Si4925DDY Tablet SI4925

    Untitled

    Abstract: No abstract text available
    Text: LTC4365 Overvoltage, Undervoltage and Reverse Supply Protection Controller Description Features n n n n n n n Wide Operating Voltage Range: 2.5V to 34V Overvoltage Protection to 60V Reverse Supply Protection to –40V LTC4365: Blocks 50Hz and 60Hz AC Power


    Original
    PDF LTC4365 200kHz 4365fa com/LTC4365

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original
    PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


    Original
    PDF 1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323