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    SI4925 Price and Stock

    Vishay Siliconix SI4925DDY-T1-GE3

    MOSFET 2P-CH 30V 8A 8SOIC
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    DigiKey SI4925DDY-T1-GE3 Cut Tape 11,350 1
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    SI4925DDY-T1-GE3 Digi-Reel 11,350 1
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    RS SI4925DDY-T1-GE3 Bulk 2,500
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    Vishay Siliconix SI4925BDY-T1-E3

    MOSFET 2P-CH 30V 5.3A 8SOIC
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    DigiKey SI4925BDY-T1-E3 Cut Tape 5,741 1
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    SI4925BDY-T1-E3 Digi-Reel 5,741 1
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    RS SI4925BDY-T1-E3 Bulk 2,500
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    Velocity Electronics SI4925BDY-T1-E3 368
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    New Advantage Corporation SI4925BDY-T1-E3 5,000 1
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    Vishay Siliconix SI4925BDY-T1-GE3

    MOSFET 2P-CH 30V 5.3A 8SOIC
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    DigiKey SI4925BDY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4925DDY-T1-GE3

    MOSFET Array, Dual P Channel, 30 V, 8 A, 29 MilliOhms, SOIC, 8 Pins - Tape and Reel (Alt: SI4925DDY-T1-GE3)
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    Avnet Americas SI4925DDY-T1-GE3 Reel 32,500 17 Weeks 2,500
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    Mouser Electronics SI4925DDY-T1-GE3 49,498
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    Newark SI4925DDY-T1-GE3 Cut Tape 3,343 5
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    SI4925DDY-T1-GE3 Reel 2,500
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    Bristol Electronics SI4925DDY-T1-GE3 15
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    Quest Components SI4925DDY-T1-GE3 1,998
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    SI4925DDY-T1-GE3 1,998
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    SI4925DDY-T1-GE3 100
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    SI4925DDY-T1-GE3 100
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    TTI SI4925DDY-T1-GE3 Reel 45,000 2,500
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    TME SI4925DDY-T1-GE3 3,556 1
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    Avnet Asia SI4925DDY-T1-GE3 21 Weeks 2,500
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    Chip1Stop SI4925DDY-T1-GE3 5,000
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    SI4925DDY-T1-GE3 555
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    EBV Elektronik SI4925DDY-T1-GE3 2,500 18 Weeks 2,500
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    New Advantage Corporation SI4925DDY-T1-GE3 2,500 1
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    Vishay Intertechnologies SI4925BDY-T1-E3

    Transistor MOSFET Array Dual P-CH 30V 5.3A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4925BDY-T1-E3)
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    Avnet Americas SI4925BDY-T1-E3 Reel 2,500
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    Newark SI4925BDY-T1-E3 Cut Tape 2,500
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    SI4925BDY-T1-E3 Reel 2,500
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    Bristol Electronics SI4925BDY-T1-E3 213
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    TTI SI4925BDY-T1-E3 Reel 7,500 2,500
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    TME SI4925BDY-T1-E3 1
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    Velocity Electronics SI4925BDY-T1-E3 122
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    EBV Elektronik SI4925BDY-T1-E3 2,500 14 Weeks 2,500
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    Find more SI4925 price and stock on Findchips.com

    SI4925 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4925 Fairchild Semiconductor Dual P-Channel, Logic Level, PowerTrench MOSFET Original PDF
    SI4925 Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4925BDY Vishay Siliconix MOSFET, DUAL PP SO-8 Original PDF
    SI4925BDY Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4925BDY-E3 Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    Si4925BDY SPICE Device Model Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4925BDY-T1 Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4925BDYT1E3 Vishay TRAN DUAL MOSFET P-CHANNEL, 7.1A, 30V, RDS-ON=25MOHM@VGS=-10V SO8 Original PDF
    SI4925BDY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 5.3A 8-SOIC Original PDF
    SI4925BDY-T1-E3 Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET Original PDF
    SI4925BDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 5.3A 8-SOIC Original PDF
    SI4925DDY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 8A 8-SOIC Original PDF
    SI4925DY Fairchild Semiconductor Dual P-Channel, Logic Level, PowerTrench MOSFET Original PDF
    Si4925DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4925DY Vishay DUAL P-CHAN., SI4925DY Original PDF
    SI4925DY Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF
    Si4925DY Vishay Intertechnology Dual P-Channel 30-V (D-S) MOSFET Original PDF
    Si4925DY SPICE Device Model Vishay Dual P-Channel 30-V (D-S) MOSFET Original PDF

    SI4925 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.025 at VGS = - 10 V - 7.1 0.041 at VGS = - 4.5 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4925BDY 2002/95/EC Si4925BDY-T1-E3 Si4925BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4925DY

    Abstract: No abstract text available
    Text: Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2


    Original     		PDF Si4925DY S-51642--Rev. 17-Mar-97

    AN609

    Abstract: Si4925DDY
    Text: Si4925DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4925DDY AN609, 02-Oct-08 AN609

    4798

    Abstract: AN609 Si4925BDY 14066m
    Text: Si4925BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4925BDY AN609 19-Jan-06 4798 14066m

    Si4925DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4925DY 0-to-10V 20-May-02

    Si4925DY

    Abstract: Si4925DY-T1
    Text: Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.032 @ VGS = −10 V −6.3 0.045 @ VGS = −4.5 V −5.3 D TrenchFETr Power MOSFET Pb-free Available SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2


    Original     		PDF Si4925DY Si4925DY-T1 Si4925DY--E3 Si4925DY-T1--E3 08-Apr-05

    Si4925DY

    Abstract: Si4925DY-T1 SI4925BDY transistor Si4925BDY Si4925BDY-E3 Si4925BDY-T1 Si4925BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4925BDY vs. Si4925DY Description: Dual P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4925BDY Replaces Si4925DY Si4925BDY-E3 (Lead (Pb)-free version) Replaces Si4925DY


    Original     		PDF Si4925BDY Si4925DY Si4925BDY-E3 Si4925BDY-T1 Si4925DY-T1 Si4925BDY-T1-E3 SI4925BDY transistor

    si4925ddy-t1-ge3

    Abstract: No abstract text available
    Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4925DDY Si4925DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4925DDY Si4925DDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4925DDY Si4925DDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4925BDY transistor

    Abstract: Si4925BDY Si4925BDY-T1
    Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.025 @ VGS = - 10 V - 7.1 0.041 @ VGS = - 4.5 V - 5.5 D TrenchFETr Power MOSFET D Advanced High Cell Density Process APPLICATIONS D Load Switches


    Original     		PDF Si4925BDY Si4925BDY-T1 S-31989--Rev. 13-Oct-03 SI4925BDY transistor

    70105

    Abstract: SI4925BDY transistor Si4925BDY A1920
    Text: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4925BDY S-52294Rev. 31-Oct-05 70105 SI4925BDY transistor A1920

    Si4925DY

    Abstract: No abstract text available
    Text: Si4925DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4925DY S-51642--Rev. 17-Mar-97

    Untitled

    Abstract: No abstract text available
    Text: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches


    Original     		PDF Si4925BDY Si4925BDY--T1 Si4925BDY--E3 Si4925BDY-T1--E3 18-Jul-08

    SI4925DY

    Abstract: No abstract text available
    Text: Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.032 @ VGS = - 10 V "6.1 0.045 @ VGS = - 4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4925DY 08-Apr-05

    70105

    Abstract: Si4925BDY
    Text: SPICE Device Model Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4925BDY 18-Jul-08 70105

    SI4925DDY

    Abstract: SI4925BDY transistor Si4925BDY Si4925BDY-T1-E3 Si4925BDY-T1-GE3 Si4925DDY-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si4925DDY vs. Si4925BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4925DDY-T1-GE3 replaces Si4925BDY-T1-E3 Si4925DDY-T1-GE3 replaces Si4925BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4925DDY Si4925BDY Si4925DDY-T1-GE3 Si4925BDY-T1-E3 Si4925BDY-T1-GE3 20-Jul-09 SI4925BDY transistor

    S237

    Abstract: 4925 B equivalent ic F63TNR F852 Si4925DY SOIC-16 SOIC-8 mosfet
    Text: January 2001 Si4925DY Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF Si4925DY OT-23 S237 4925 B equivalent ic F63TNR F852 SOIC-16 SOIC-8 mosfet

    Si4925DY

    Abstract: No abstract text available
    Text: Si4925DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4925DY S-51642--Rev. 17-Mar-97

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4925DDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d, e 0.029 at VGS = - 10 V -8 0.041 at VGS = - 4.5 V -8 VDS (V) - 30 • Halogen-free • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ.)


    Original     		PDF Si4925DDY Si4925DDY-T1-GE3 11-Mar-11

    Si4925DY

    Abstract: S237 4925 B SOIC-16
    Text: January 2001 Si4925DY Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		PDF Si4925DY OT-23 S237 4925 B SOIC-16

    Si4925DY

    Abstract: No abstract text available
    Text: Si4925DY Dual P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.032 @ VGS = –10 V "6.1 0.045 @ VGS = –4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4925DY S-49519--Rev. 20-Dec-96

    Si4925DY

    Abstract: No abstract text available
    Text: Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.032 @ VGS = - 10 V "6.1 0.045 @ VGS = - 4.5 V "5.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View D1 D1 P-Channel MOSFET D2 D2 P-Channel MOSFET


    Original     		PDF Si4925DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Temic Si4925DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Summary V D S (V ) 30 I d (A ) rDS(on) (£2) 0.032 @ V Gs = -1 0 V 0.045 @ V Gs = -4 .5 V ± 6 .1 ± 5 .1 Si s2 o 9 SO-8 6 6 Di Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4925DY S-51642â 17-Mar-97