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    SI237 Price and Stock

    Vishay Siliconix SI2377EDS-T1-GE3

    MOSFET P-CH 20V 4.4A SOT23-3
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    DigiKey SI2377EDS-T1-GE3 Digi-Reel 16,903 1
    • 1 $0.69
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    SI2377EDS-T1-GE3 Cut Tape 16,903 1
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    SI2377EDS-T1-GE3 Reel 12,000 3,000
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    RS SI2377EDS-T1-GE3 Bulk 20
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    New Advantage Corporation SI2377EDS-T1-GE3 33,000 1
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    Vishay Siliconix SI2371EDS-T1-GE3

    MOSFET P-CH 30V 4.8A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2371EDS-T1-GE3 Cut Tape 16,343 1
    • 1 $0.44
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    • 1000 $0.11219
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    SI2371EDS-T1-GE3 Digi-Reel 16,343 1
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    SI2371EDS-T1-GE3 Reel 15,000 3,000
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    RS SI2371EDS-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI2371EDS-T1-GE3 330,000 1
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    Vishay Siliconix SI2374DS-T1-GE3

    MOSFET N-CH 20V 4.5A/5.9A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2374DS-T1-GE3 Cut Tape 14,537 1
    • 1 $0.48
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    SI2374DS-T1-GE3 Reel 12,000 3,000
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    New Advantage Corporation SI2374DS-T1-GE3 180,000 1
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    Vishay Siliconix SI2374DS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2374DS-T1-BE3 Digi-Reel 3,444 1
    • 1 $0.48
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    SI2374DS-T1-BE3 Cut Tape 3,444 1
    • 1 $0.48
    • 10 $0.293
    • 100 $0.48
    • 1000 $0.12379
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    Vishay Siliconix SI2371EDS-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2371EDS-T1-BE3 Reel 3,000 3,000
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    SI2371EDS-T1-BE3 Cut Tape 3,000 1
    • 1 $0.44
    • 10 $0.267
    • 100 $0.44
    • 1000 $0.11219
    • 10000 $0.11219
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    SI2371EDS-T1-BE3 Digi-Reel 3,000 1
    • 1 $0.44
    • 10 $0.267
    • 100 $0.44
    • 1000 $0.11219
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    New Advantage Corporation SI2371EDS-T1-BE3 6,000 1
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    Find more SI237 price and stock on Findchips.com

    SI237 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2371EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4.8A SOT-23 Original PDF
    SI2372DS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 30V SOT23 Original PDF
    SI2374DS-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 20V SOT23 Original PDF
    SI2377EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.4A SOT-23 Original PDF

    SI237 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		Si2377EDS 2002/95/EC O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2372DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2371EDS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2371EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si2377eds-t1-ge3

    Abstract: Si2377EDS 0542 si2377 SI2377eds-t1 SI237 P6 marking
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		Si2377EDS 2002/95/EC O-236 OT-23) Si2377EDS-T1-GE3lectual 18-Jul-08 si2377eds-t1-ge3 0542 si2377 SI2377eds-t1 SI237 P6 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 VDS (V) - 20 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		Si2377EDS 2002/95/EC O-236 OT-23) 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2377EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2372DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si2372DS AN609, 5068u 6461u 1836m 9299u 3375m 6027u 7915m 26-Feb-2014 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2371EDS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.045 at VGS = - 10 V - 4.8 0.053 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.6 a Qg (Typ.) 10.6 nC TO-236 (SOT-23) G APPLICATIONS


    Original     		Si2371EDS O-236 OT-23) Si2371EDS-T1-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) d 0.030 at VGS = 4.5 V 5.9 0.034 at VGS = 2.5 V 5.5 0.041 at VGS = 1.8 V 5 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		Si2374DS OT-23 O-236) Si2374DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    transistor c 6093

    Abstract: transistor 5586 AN609 Si2377EDS
    Text: Si2377EDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si2377EDS AN609, 02-Mar-10 transistor c 6093 transistor 5586 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2374DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2374DS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si2374DS AN609, 5067u 6461u 1836m 9299u 3375m 6027u 7915m 26-Feb-2014 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF