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    SF30H Search Results

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    SF30H Price and Stock

    Diodes Incorporated SF30HG-B

    DIODE GEN PURP 500V 3A DO201AD
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    Diodes Incorporated SF30HG-T

    DIODE GEN PURP 500V 3A DO201AD
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    DigiKey SF30HG-T Reel 1,200
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    Taiwan Semiconductor TSF30H60C

    DIODE ARR SCHOT 60V 15A ITO220AB
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    Mouser Electronics TSF30H60C
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    Newark TSF30H60C Bulk 1,980 1
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    Taiwan Semiconductor TSF30H45C

    DIODE ARR SCHOT 45V 15A ITO220AB
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    Newark TSF30H45C Bulk 1,987 1
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    Taiwan Semiconductor TSF30H120C

    DIODE ARR SCHOTTKY 120V ITO220AB
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    SF30H Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SF30H1R5 Shindengen Electric Schottky Rectifier (SBD) Original PDF
    SF30HG Diodes 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF30HG Diodes Short Form Selection Guide Original PDF
    SF30HG Diodes 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF30HG Lite-On Technology 500V, 3.0A super fast glass passivated rectifier Original PDF
    SF30HG Vishay Ultra-Fast Rectifier (trr less than 100nsec) Original PDF
    SF30HG-B Diodes RECTIFIER FAST-RECOVERY SINGLE 3A 500V 125A-ifsm 1.5V-vf 50ns 5uA-ir DO-201AD 500/BULK Original PDF
    SF30HG-T Diodes RECTIFIER FAST-RECOVERY SINGLE 3A 500V 125A-ifsm 1.5V-vf 50ns 5uA-ir DO-201AD 1.2K/REEL-13 Original PDF

    SF30H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SF30H1R5

    Abstract: No abstract text available
    Text: SHINDENGEN Schottky Rectifiers SBD SF30H1R5 Single OUTLINE DIMENSIONS 15V 30A Case : FTO-220 (Unit : mm) RATINGS œAbsolute Maximum Ratings (If not specified TS=25Ž) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage


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    SF30H1R5 FTO-220 SF30H1R5 PDF

    SF30BG

    Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    DO-201AD

    Abstract: 201AD SF30AG SF30FG SF30JG af30g
    Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop


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    SF30AG SF30JG DO-201AD J-STD-020C 500/Bulk SF30BG-T 13-inch SF30CG-B DO-201AD 201AD SF30FG SF30JG af30g PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


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    M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


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    5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    Untitled

    Abstract: No abstract text available
    Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop


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    SF30AG SF30JG MIL-STD-202, DO-201AD SF30AGSF30GG SF30HGSF30JG DS24014 PDF

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG PDF

    Diodes SF30

    Abstract: No abstract text available
    Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak


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    SF30AG SF30JG MIL-STD-202, DO-201AD SF30AGSF30GG SF30HGSF30JG DS24014 Diodes SF30 PDF

    SF30BG

    Abstract: SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SF30AG
    Text: SF30AGSF30JG Vishay Lite–On Power Semiconductor 3.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage


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    SF30AG SF30JG SF30AG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG PDF

    SF30DG

    Abstract: SF30FG SF30GG SF30HG SF30JG SF30BG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    SF30BG SF30JG DO-201AD DO-201AD SF30DG SF30FG SF30GG SF30HG SF30JG PDF

    SF30BG

    Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


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    SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG PDF

    Untitled

    Abstract: No abstract text available
    Text: SF20AG - SF20JG 2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 60A Peak


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    SF20AG SF20JG DO-15 J-STD-020C MIL-STD-202, DS24013 SF20AG-T SF30BG-T PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


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    MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    SF30H1R5

    Abstract: No abstract text available
    Text: 2 /a v h + - KU7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF30H1R5 15V 3 0 A >Tjl25°C US V f = 0.41V > 7 ,llÆ -,lb K >$ È jfIÎJ±2 kV ffilI RATINGS Absolute Maximum Ratings a a i 5 E -fSymbol Conditions Item iXlYrii.HX Storage Temperature


    OCR Scan
    SF30H1R5 Tjl25 SF30H J515-5 SF30H1R5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode W tm SF30H1R5 OUTLINE 15V 30A Feature • Tj=125°C • • • • • fiVF=0.41V • 71 [ Æ - JU K • «tB J± 2 kVS§ Œ Tj=125°C Low V f=0.41 V Full Molded Dielectric Strength 2kV Main Use • Reverse current protection


    OCR Scan
    SF30H1R5 PDF

    smd 1f

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes High frequency rectifying Absolute Maximum Ratings Type No. ★SF20H1R5 SF30H1R5 V rm lo [V] [A] rc] 15 15 20 30 1 46*1 D1NS4 40 6 M1FP3 60 30 1.29 M1FS4 40 1.33 6 D1FS4 60 1.2 40 6 60 1.1 Electrical Characteristics Ifsm Tstg Tj


    OCR Scan
    SF20H1R5 SF30H1R5 DE10S3L DE10P3 ITO-220 O-220 FTO-220 AX057) smd 1f PDF

    Untitled

    Abstract: No abstract text available
    Text: SF30AG-SF30JG Vishay Lite-On Power Semiconductor 3.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage


    OCR Scan
    SF30AG-SF30JG SF30AG SF30BG SF30C SF30D SF30FG SF30G SF30H SF30JG D-74025 PDF