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    diode ax 277

    Abstract: No abstract text available
    Text: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3


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    S40HC1R5 Tjl25 S40HC 50HziE5K 50H0HC1R5 25tTYP J515-5 diode ax 277 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 /a v h + - KU7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF20H1R5 1 5 V 2 0 A >Tjl25°C US V f = 0.41V > 7 ,llÆ -,lb K >$È jfIÎJ±2kV ffilI RATINGS Absolute Maximum Ratings a a i 5 E - fSymbol Conditions Item iXlYrii.HX Storage Temperature


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    SF20H1R5 Tjl25 50HziE5K i10ms J515-5 PDF

    SF30H1R5

    Abstract: No abstract text available
    Text: 2 /a v h + - KU7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS SF30H1R5 15V 3 0 A >Tjl25°C US V f = 0.41V > 7 ,llÆ -,lb K >$ È jfIÎJ±2 kV ffilI RATINGS Absolute Maximum Ratings a a i 5 E -fSymbol Conditions Item iXlYrii.HX Storage Temperature


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    SF30H1R5 Tjl25 SF30H J515-5 SF30H1R5 PDF

    A5 DIODE

    Abstract: S60HC1R5
    Text: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60HC1R5 Package I MTO-3P lo-o.^ 4>33±0-2 \ » \r on^i Type No. >Tjl25°C 5 .0 ±a3 2 . 2 ±a5> W Date code 15V 60A Unit • mm -, r +0.5 \ S # Lrt <M US Vf = 0.41V 2 . 0 ±a3


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    S60HC1R5 Tjl25 S60HC1R5 50HziE5K J515-5 A5 DIODE PDF

    TCI shortwave switch

    Abstract: F0512
    Text: w M I L - M -38510/221A US A F 14 November 1983 w m n n r r c -MIL-M-38510/22HUSAF) 10 O c t o b e r 19 80 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, 1 6 , 3 8 4 BI T , M O S , U L T R A V I O L E T E R A S A B L E P R O G R A M M A B L E RE A D - O N L Y M E M O R Y (EPROM),


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    MIL-M-38510/221AÃ MIL-M-38510/22HUSAF) MIL-M-38510 MIL-M-38510. 5962-F647-3) TCI shortwave switch F0512 PDF

    1mb3006

    Abstract: No abstract text available
    Text: PUJl o - — y ° n $ o h Fuji New Semiconductor Products 6 0 0 V /3 0 A ± U I i _M í - i l / K M H 4$ i 1M B30-060,1MBH30D-060 I G B T Features • f £ il^ v 3 L > '7 '- y — ' s t l & S ' X i t • V 7 • «1*114, ^ I H • 1 1 4 : 7 7 7 I (RBSOA, SCSOA 4' if


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    B30-060 1MBH30D-060 1mb3006 PDF

    Diode RJ 4B

    Abstract: 6mb175fa 6MBI75FA-060 6MBI75FA060 ELLS 110 M603 A158 IC m4509
    Text: 6MBI75FA-060 75A IGBT • Outline Drawings IG BT M O D U LE • Features Low Saturation Voltage • n E .m to (M O S ' f - t m & ) • Voltage Drive Variety of Power Capacity Series • A pplications • i — SiiWjM'f > '< — 9 • AC , D C If—# 7 > ~ ?


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    6MBI75FA-060 Diode RJ 4B 6mb175fa 6MBI75FA-060 6MBI75FA060 ELLS 110 M603 A158 IC m4509 PDF