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    SF30D Search Results

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    SF30D Price and Stock

    Lightware SF30-D

    SENSOR OPT ANALOG I2C SERIAL USB
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    DigiKey SF30-D Box 35 1
    • 1 $399
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    American Hakko Products Inc SF-30-D

    WIRE STRIPPER,32-22 GAUGE,ADJUST
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    DigiKey SF-30-D Bulk 1
    • 1 $31.03
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    Diodes Incorporated SF30DG-T

    DIODE GEN PURP 200V 3A DO201AD
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    DigiKey SF30DG-T Reel 1,200
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    Quest Components SF30DG-T 1,200
    • 1 $0.9
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    Diodes Incorporated SF30DG-B

    DIODE GEN PURP 200V 3A DO201AD
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    DigiKey SF30DG-B Bulk
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    Lightware SF30/D

    Distance Sensor Modules SF30/D 200 m Rangefinder Module
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    Mouser Electronics SF30/D 17
    • 1 $399
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    Find more SF30D price and stock on Findchips.com

    SF30D Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SF30D11 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    SF30D13 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    SF30D13 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    SF30D13 Toshiba Phase Control Thyristor Scan PDF
    SF30D13 Toshiba Phase Control / High Speed Thyristors Scan PDF
    SF30DG Diodes 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF30DG Diodes Short Form Selection Guide Original PDF
    SF30DG Diodes 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Original PDF
    SF30DG Diodes 3.0 A Super-Fast Glass Passivated Rectifier Original PDF
    SF30DG Lite-On Technology 200V, 3.0A super fast glass passivated rectifier Original PDF
    SF30DG Vishay Ultra-Fast Rectifier (trr less than 100nsec) Original PDF
    SF30DG-B Diodes RECTIFIER FAST-RECOVERY SINGLE 3A 200V 125A-ifsm 0.95V-vf 35ns 5uA-ir DO-201AD 500/BULK Original PDF
    SF30DG-T Diodes RECTIFIER FAST-RECOVERY SINGLE 3A 200V 125A-ifsm 0.95V-vf 35ns 5uA-ir DO-201AD 1.2K/REEL-13 Original PDF

    SF30D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SF30BG

    Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


    Original     		PDF SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    DO-201AD

    Abstract: 201AD SF30AG SF30FG SF30JG af30g
    Text: SF30AG - SF30JG 3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop


    Original     		PDF SF30AG SF30JG DO-201AD J-STD-020C 500/Bulk SF30BG-T 13-inch SF30CG-B DO-201AD 201AD SF30FG SF30JG af30g

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    Untitled

    Abstract: No abstract text available
    Text: LITE ON POWER SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


    Original     		PDF SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG

    SF30BG

    Abstract: SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG SF30AG
    Text: SF30AG–SF30JG Vishay Lite–On Power Semiconductor 3.0A Super–Fast Glass Passivated Rectifiers Features D D D D Glass passivated die construction Diffused junction Super–fast switching for high efficiency High current capability and low forward voltage


    Original     		PDF SF30AG SF30JG SF30AG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30BG SF30CG SF30DG SF30FG SF30GG SF30HG SF30JG

    SF30DG

    Abstract: SF30FG SF30GG SF30HG SF30JG SF30BG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


    Original     		PDF SF30BG SF30JG DO-201AD DO-201AD SF30DG SF30FG SF30GG SF30HG SF30JG

    SF30BG

    Abstract: SF30DG SF30FG SF30GG SF30HG SF30JG
    Text: LITE-ON SEMICONDUCTOR SF30BG thru SF30JG REVERSE VOLTAGE - 100 to 600 Volts FORWARD CURRENT - 3.0 Amperes SUPER FAST GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Glass passivated chip Super fast switching time for high efficiency Low forward voltage drop and high current capability


    Original     		PDF SF30BG SF30JG DO-201AD DO-201AD SF30GG SF30HG SF30FG SF30DG SF30GG SF30JG

    Untitled

    Abstract: No abstract text available
    Text: SF20AG - SF20JG 2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 60A Peak


    Original     		PDF SF20AG SF20JG DO-15 J-STD-020C MIL-STD-202, DS24013 SF20AG-T SF30BG-T

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		PDF MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    SF30Q13

    Abstract: SF30F13 SF30D13 SF30G13 SF30L13 SF30N13 ac56 TOSHIBA THYRISTOR OPTO thyristor gate
    Text: 9097250 TOSHIBA 39C 02275 <D I S C R E T E / O P T O PHASE CONTROL THYRISTOR »F| ^ 7 3 5 0 TOSHIBA {DISCRETE/OPTO} SF30Q13 Unit in n n DD0S57S 1200V 30A MAXIMUM RATINGS C H A R A C TER ISTIC SF30D13 Repetitive Peak SF30F13 Off-State Voltage SF30G13 and Repetitive


    OCR Scan     		PDF SF30Q13 SF30D13 SF30F13 SF30G13 SF30J SF30L13 SF30N13 SF30Q13 SF30F13 SF30G13 SF30L13 SF30N13 ac56 TOSHIBA THYRISTOR OPTO thyristor gate

    MSG100L41

    Abstract: TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g
    Text: •A L P H A N U M E R IC A L IN D E X # Type No. CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 CU80L6A3 CU80Q6S3 CU80U6A3 CU150J6S3 CU150L6A3 CU150Q6S3 CU150U6A3 CU300J6S3 CU300F6A3 CU300Q6S3 CU300U6A3 MSA60G41


    OCR Scan     		PDF CU16J6S3 CU16L6A3 CU16Q6S3 CU30J6S3 CU30L6A3 CU30Q6S3 CU50J6S3 CU50L6A3 CU50Q6S3 CU80J6S3 MSG100L41 TSS1G41 SF5B42 SM6G14 TSS2G41 1J44 1J-44 TSS25J47S TSS2J2A44S f0r3g

    BT 812 600bw

    Abstract: BT810 800BW BT810-800BW BT 808 600C BT 808 600 replacement TYN412 TYN408G TYN604 T2513MK TLS106-4
    Text: CROSS REFERENCE INDUSTRY PART NUMBER SQS-THOMSON SQS-THOMSON DIRECT SIMILAR REPLACEMENT REPLACEMENT INDUSTRY SGS-THOMSON SGS-THOMSON DIRECT PART NUMBER. SIMILAR REPLACEMENT REPLACEMENT 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A 2N6343 2N6343A


    OCR Scan     		PDF 2N6071 2N6071A 2N6073 2N6073A 2N6075 2N6075A 2N6342 2N6342A 2N6343 2N6343A BT 812 600bw BT810 800BW BT810-800BW BT 808 600C BT 808 600 replacement TYN412 TYN408G TYN604 T2513MK TLS106-4

    FOR5J

    Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
    Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3


    OCR Scan     		PDF SFOH5H43 SF3H41 SF5H41 1000A I500A SF1500C SF1500J27 SF500H27 SF600H27 SF500D27 FOR5J GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    Untitled

    Abstract: No abstract text available
    Text: SF30AG-SF30JG Vishay Lite-On Power Semiconductor 3.0A Super-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage


    OCR Scan     		PDF SF30AG-SF30JG SF30AG SF30BG SF30C SF30D SF30FG SF30G SF30H SF30JG D-74025

    jointal Z

    Abstract: NIKKEI JOINTAL 200 grease nikkei S-200 nikkei S200 25d13 nikkei jointal nikkei S-200 25D-13 nikkei S-200 grease 10D-13
    Text: 4. HANDLING PRECAUTION When using sem i-conductors, supply o f thermal and/or mechanical stress to devices by improper handling o f them may result in signific­ ant deterioration in their electric characteristics and/or reliability. This section describes important notes for


    OCR Scan     		PDF 220AB 10B1B\ 10A1B/ 13-10F1A 16D1A) jointal Z NIKKEI JOINTAL 200 grease nikkei S-200 nikkei S200 25d13 nikkei jointal nikkei S-200 25D-13 nikkei S-200 grease 10D-13

    SM6G14

    Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A
    Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42


    OCR Scan     		PDF 000221b SF0R1B42 SF0R1G42 SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42 SF1B12 SF1D12 SF1G12 SM6G14 triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A