IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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MYXDS1200-15ABS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 1200 Volt 15 Amp Hermetic MYXDS1200-15ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency • Reduction of heat sink requirements
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MYXDS1200-15ABS
O-257
MYXDS1200-15ABS
silicon carbide
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: S6207 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 23nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
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S6207
R1102B
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Untitled
Abstract: No abstract text available
Text: SCS215AM Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications
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SCS215AM
O-220FM
R1102B
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SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
Text: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BSC
O-247
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
data sheet IC 7450
APT30GP60BSC
T0-247
APT10SC60
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IC 7448
Abstract: data sheet IC 7448 7448 ic cathode drivers 7448 datasheet IC 7448 APT15GP60BSC Schottky Diode 400V 15A 7448 ic data sheet 7448 p ic T0-247
Text: TYPICAL PERFORMANCE CURVES APT15GP60BSC APT15GP60BSC 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BSC
O-247
Gate610)
IC 7448
data sheet IC 7448
7448 ic
cathode drivers 7448
datasheet IC 7448
APT15GP60BSC
Schottky Diode 400V 15A
7448 ic data sheet
7448 p ic
T0-247
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APTC80H29SCT
Abstract: No abstract text available
Text: APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mW max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies VBUS
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APTC80H29SCT
290mW
APTC80H29SCT
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APT0406
Abstract: APT0501 APT0502 APTC80H29SCTG DIODE S4 75a 75AVGS
Text: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC80H29SCTG
induct400
APT0406
APT0501
APT0502
APTC80H29SCTG
DIODE S4 75a
75AVGS
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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Untitled
Abstract: No abstract text available
Text: APTC80H29SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290m max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
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APTC80H29SCTG
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Untitled
Abstract: No abstract text available
Text: SCS215AE Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC TO-247 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) N/C (2) Cathode (3) Anode 3) High-speed switching possible (1) (2) (3)
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SCS215AE
O-247
R1102B
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ntc2.5 thermistor
Abstract: ntc1.0 NTC1 Thermistor
Text: APTC80H29SCT Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 290mΩ Ω max @ Tj = 25°C ID = 15A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC80H29SCT
ntc2.5 thermistor
ntc1.0
NTC1 Thermistor
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SCS215AJ
Abstract: No abstract text available
Text: SCS215AJ Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible
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SCS215AJ
O-263AB>
R1102B
SCS215AJ
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Untitled
Abstract: No abstract text available
Text: APTC80H29SCTG VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR1B Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
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APTC80H29SCTG
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600
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IXGH48N60C3C1
IC110
100kHz
O-247
IF110
48N60C3C1
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mosfet 600V 30A
Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low
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APT30GS60BRDQ2
APT30GS60SRDQ2
100kHz,
mosfet 600V 30A
IGBT 400V 100KHZ 30A
MIC4452
MOSFET 40A 600V
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DIODE SMD 5050
Abstract: smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AUTOMOTIVE APPLICATIONS SOLUTIONS MARKET SEGMENT w w w. v i s h a y. c o m Automotive Applications Solutions from Vishay Intertechnology Introduction Body Electric & Comfort Electric Sensors Immobilizer & Security Systems
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VSA-PL0017-0406
DIODE SMD 5050
smd led 5050
SMD LED 5050 datasheet
DO-219AB footprint SMD LED 5050 datasheet smd led
smd 6 led 5050 datasheet
led smd 5050
5050 SMD LED
DIODE led SMD 5050
DO-219AB footprint SMD LED 5050 smd led
smps ic smd 8 pin
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IXGH36N60B3C1
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES
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IC110
IXGH36N60B3C1
100ns
40kHz
O-247
36N60B3C1
IXGH36N60B3C1
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Untitled
Abstract: No abstract text available
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
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MOSFET welding INVERTER 200A
Abstract: Mosfet 30A 300V APT30GS60BRDL MIC4452 single phase igbt based WELDING inverter 200 amps SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Text: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
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APT30GS60BRDL
100kHz,
MOSFET welding INVERTER 200A
Mosfet 30A 300V
MIC4452
single phase igbt based WELDING inverter 200 amps
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
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vogt
Abstract: fi324 Resistor R1206 vogt -sumida 200v 3A schottky 380v bcb56b C0805 100nf capacitor kmg KMG 200V
Text: Ref. Q.ty CONI 1 Variant Clamp, WECO, 2 pole, horizontal, 1.5mm2, 380V, 15A CON2 1 Clamp, WECO, 3 pole, horizontal, 1.5mm2, 380V, 15A C1 1 22pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20% C2 1 10pF Electrolytic capacitor, Nippon Chemi-Con, KMG 400V, 20%
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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ucqs10a065
Abstract: UCQS20A045 UCHS10A065 ucqs UCF10A40 UCHS30A08 smps new UCHS30A12 ucqs30a045 600va
Text: •I II ■I m m .m m m 11 Low Height Profile,Low Thermel Res stance I J H 45 88 / Features • / \ V* — • g S M b C tfft Package thickness of as thin as 1.7mm for portable equipments • / N V ^ - v f f 1 # - T O - 2 6 3 L P / T O - 2 6 3 i t K T '4 0 % l i C '
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O-263
UCHS30A045
15AX2
UCHS10A12
UCQS30A065
UCQ20B03
10AX2
UCHS30A065
ucqs10a065
UCQS20A045
UCHS10A065
ucqs
UCF10A40
UCHS30A08
smps new
UCHS30A12
ucqs30a045
600va
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