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    SAMSUNG STORAGE Search Results

    SAMSUNG STORAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG STORAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15 PDF

    Samsung 8Gb MLC

    Abstract: samsung 32GB Nand flash MLC memory lightscribe Samsung 32Gb Nand flash Samsung 8Gb MLC Nand flash SAMSUNG NAND FLASH samsung external dvd writer dvd writer laser diode SATA hard disk for samsung notebook dvd power sata connector
    Text: Samsung Storage Solutions The Broadest Offering Today, from Optical and Hard Drives to Breakthrough Flash Storage Samsung Storage Solutions Data Storage for Any Application Samsung is the world’s second-largest semiconductor manufacturer whose deep expertise in hardware


    Original     		256MB BR-06-STOR-002 Samsung 8Gb MLC samsung 32GB Nand flash MLC memory lightscribe Samsung 32Gb Nand flash Samsung 8Gb MLC Nand flash SAMSUNG NAND FLASH samsung external dvd writer dvd writer laser diode SATA hard disk for samsung notebook dvd power sata connector PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    samsung eMMC 4.5

    Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
    Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile


    Original     		BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2 PDF

    SAMSUNG GDDR4

    Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
    Text: Samsung High-Performance GDDR4 Graphics Memory Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung’s GDDR4  is next-generation, Three-dimensional graphics applications require advanced memory with exceptional performance. Samsung’s GDDR4 memory delivers an ultra-fast


    Original     		512Mb 4Mx32 K4D263238 8Mx16 K4D261638 128Mb DS-07-GDRAM-001 SAMSUNG GDDR4 GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR PDF

    gddr3

    Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
    Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3  is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important


    Original     		512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA PDF

    S3FM02G

    Abstract: No abstract text available
    Text: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.34 August 2012 User's Manual  2012 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication


    Original     		S3FM02G 32-Bit S3FM02G S3FM02G. 128-ETQFP-1414 128-ETQFP-1414 128ETQFP-1414 PDF

    Untitled

    Abstract: No abstract text available
    Text: S3FM02G 32-Bit CMOS Microcontrollers Revision 1.20 October 2011 User's Manual  2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication


    Original     		S3FM02G 32-Bit S3FM02G S3FM02G. 128-ETQFP-1414 128-ETQFP-1414 128ETQFP-1414 PDF

    SEMCO

    Abstract: No abstract text available
    Text: 2008. 05. 22 DATE OF ISSUE : SPECIFICATION MODEL : SLHNNWH531T0 HIGH POWER LED - SUNNIX CUSTOMER : SAMSUNG ELECTRO-MECHANICS DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS DRAWN CHCKED Sales CHECKED(Quality) APPROVED SAMSUNG ELECTRO-MECHANICS CO,.LTD. 314, MAETAN3-DONG, YEONGTONG-GU,


    Original     		SLHNNWH531T0 24hours SLHNNWH531T0S0QRC5) SEMCO PDF

    Untitled

    Abstract: No abstract text available
    Text: S3FN429 32-bit CMOS Microcontrollers Revision 0.00 September 2011 User's Manual  2011 Samsung Electronics Co., Ltd. All rights reserved. Important Notice Samsung Electronics Co. Ltd. "Samsung" reserves the right to make changes to the information in this publication


    Original     		S3FN429 32-bit 44-QFP-1414 44-QFP-1414 PDF

    OneNAND

    Abstract: oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash
    Text: SEC-ONENAND-AN-001 Samsung OneNAND System Requirement Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Revision History Version 0.1 Date NOV-25-2004 Comment Initial version Author Seungeun Lee Approval Document Overview - Status: - Num of Pages:


    Original     		SEC-ONENAND-AN-001 NOV-25-2004 OneNAND oneNand flash samsung roadmap sensing "nor flash memory" samsung SEC-ONENAND-AN-001 samsung 2GB X16 Nand flash onenand block map NAND FLASH 64MB samsung onenand samsung 2GB Nand flash PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


    Original     		128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5401000B/BG GD1514b 1Mx40 KMM5401000B bitsx40 20-pin 72-pin 110ns KMM5401000B-7 PDF

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8 PDF

    samsung LRA

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA PDF

    IS100-L30O-C23

    Abstract: LTM190EX-L31 T-CON SAMSUNG LCD RD-80S LTM190EX SI1700 samsung LCD TCON lvds 32 pin lcd samsung LVDS connector 30 pins LCD lcd screen LVDS connector 30 pins
    Text: Product Information ISSUED DATE : 22/June/2006 SAMSUNG -LCD SAMSUNG TFT TFT-LCD MODEL -L31 MODEL : LTM190EX LTM190EX-L31 Note : This is Product Information is subject to change after 3 months of issuing date. Product Planning Group 2, LCD Business Samsung Electronics Co . , LTD.


    Original     		22/June/2006 LTM190EX-L31 IS100-L30O-C23 LTM190EX-L31 T-CON SAMSUNG LCD RD-80S LTM190EX SI1700 samsung LCD TCON lvds 32 pin lcd samsung LVDS connector 30 pins LCD lcd screen LVDS connector 30 pins PDF

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7 PDF

    SAMSUNG DDR4

    Abstract: samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung
    Text: Optimizing Virtualization using Advanced Memory and Storage Technology Speakers: Sylvie Kadivar, PhD, Director, DRAM Strategic Marketing, Samsung Steve Weinger, Director, Flash Marketing, Samsung 1/? No.2 for 8 years in Semiconductor Industry *Source : Gartner March 2010


    Original     		320GB SAMSUNG DDR4 samsung toggle mode NAND samsung ddr3 RAM DDR2 samsung 30nm green ddr3 HS21XM ddr2 ram slots for laptop Samsung 8Gb MLC Nand flash DIMM DDR4 socket DDR3 DIMM spec samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7 PDF

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TRhMlMS DOlMMhT T6b mSt\GK KMM591000AN DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 591000AN is a 1M bit X 9 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM591000AN 591000AN KMM591OOOAN KM44C1OOOAJ 20-pin KM41C1OOOBJ 30-pin 22fiF 130ns PDF

    samsung rfs

    Abstract: SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer
    Text: Introduction to Samsung’s Linux Flash File System - RFS Application Note November-2006, Version 1.0 Copyright Notice Copyright 2006, Flash Software Group, Samsung Electronics Co., Ltd All rights reserved. Trademarks RFS is a trademark of Memory Division, Samsung Electronics Co., Ltd in Korea and other countries.


    Original     		November-2006, samsung rfs SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FTL samsung xsr SAMSUNG NAND FLASH TRANSLATION LAYER BML STL NAND XSR oneNand flash onenand xsr Flash Translation Layer PDF