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    SAMSUNG SDRAM FOR 32MX16 Search Results

    SAMSUNG SDRAM FOR 32MX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    SAMSUNG SDRAM FOR 32MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung ddr3

    Abstract: DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM
    Text: Samsung High-performance SDRAM for Main Memory DDR2 and DDR3 Deliver High Bandwidth with Low Power Consumption for Servers, Desktops and Portables Advanced Samsung Memory for Computing Applications First to Market with Advanced SDRAM Double Date Rate SDRAM is today’s standard for high-performance servers, desktops and portable


    Original     		PDF BR-07-SDRAM-001 samsung ddr3 DDR3 sodimm 8gb samsung M395T2953EZ4 DDR3 DIMM 240 pin names m470t5663cz3 samsung DDR3 SDRAM 2GB 1GB DDR2 4 banks SODIMM ddr2 8gb samsung ddr-3 Datasheet Unbuffered DDR2 SDRAM DIMM

    LDD5

    Abstract: Samsung ddr2 DDR2 ddr2 samsung computer motherboard DDR circuit diagram DDR2 Datasheet notebook circuit diagram DDR2-533 DDR400 M470T3354CZ3
    Text: Samsung DDR2: When Performance Matters Maximum Speed and Mobility for Notebooks Samsung DDR2 SODIMMs are available in densities from 256MB to 2GB and feature speeds up to 667Mb per second. Low Power and Fast Speed for Notebook PCs DDR2 SDRAM SODIMMs from Samsung


    Original     		PDF 256MB 667Mb se669AZ0 256Mx8 8K/64ms DS-06-DRAM-003 LDD5 Samsung ddr2 DDR2 ddr2 samsung computer motherboard DDR circuit diagram DDR2 Datasheet notebook circuit diagram DDR2-533 DDR400 M470T3354CZ3

    PL172

    Abstract: 8Mx32 20C200 831000 4Mx16 flash 4C00 4mx32 Samsung 6400 C400 C800
    Text: SEC-MFAEG-MobileSDRAM-AN Application Note ARM PrimeCellTM MPMC PL172 Register Setting for Mobile SDRAM Version 1.0, Sep 30-2005, Samsung Electronics Copyright ⓒ 2004 Samsung Electronics Co.,LTD. Contact Information Mobile/ Flash Application Engineering Group


    Original     		PDF PL172) re062000 32bits 2Mx32 128Mb 4Mx32 8Mx32 256Mb 512Mb 16Mx16 PL172 8Mx32 20C200 831000 4Mx16 flash 4C00 4mx32 Samsung 6400 C400 C800

    k4t51163qi

    Abstract: K4T51163QI-HIE6 K4T51163QI-HDE6 K4T51163QIH
    Text: Rev. 1.03, Feb. 2010 K4T51163QI 512Mb I-die DDR2 SDRAM Industrial 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51163QI 84FBGA 512Mb 6-10per) 6-10per k4t51163qi K4T51163QI-HIE6 K4T51163QI-HDE6 K4T51163QIH

    K4T51163QQ

    Abstract: K4T51163QQ-BCF8 K4T51163Qq-BCE7
    Text: Rev. 1.0, Feb. 2014 K4T51083QQ K4T51163QQ 512Mb Q-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51083QQ K4T51163QQ 512Mb 84FBGA 6-10per) 6-10per K4T51163QQ K4T51163QQ-BCF8 K4T51163Qq-BCE7

    K4T51163QI

    Abstract: K4T51163QI-HC 60045 K4T51083QI
    Text: Rev. 1.1, Jul. 2011 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QI K4T51083QI K4T51163QI 512Mb 84FBGA 6-10per) 6-10per K4T51163QI K4T51163QI-HC 60045

    K4T51163QJ-BCE6

    Abstract: K4T51163QJ-BCE7 K4T51163QJ-BCF7 K4T51163QJ K4T51083QJ-BCE6 K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8 K4T51083QJ K4T51083QJ-BCF7
    Text: Rev. 1.1, Jul. 2011 K4T51043QJ K4T51083QJ K4T51163QJ 512Mb J-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QJ K4T51083QJ K4T51163QJ 512Mb 84FBGA 6-10per) 6-10per K4T51163QJ-BCE6 K4T51163QJ-BCE7 K4T51163QJ-BCF7 K4T51163QJ K4T51083QJ-BCE6 K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8 K4T51083QJ-BCF7

    K4T51083QI

    Abstract: K4T51083QI-HC K4T51043QI K4T51163QI-HC k4t51163qi
    Text: Rev. 1.0, Mar. 2010 K4T51043QI K4T51083QI K4T51163QI 512Mb I-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QI K4T51083QI K4T51163QI 512Mb 84FBGA 6-10per) 6-10per K4T51083QI-HC K4T51163QI-HC k4t51163qi

    K4T51163QJ-BCE7

    Abstract: K4T51163QJ-BCE6 K4T51163QJ-BCF7 K4T51083QJ-BCE6 K4T51163QJ K4T51163QJ-BCE K4T51083QJ K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8
    Text: Rev. 1.0, Mar. 2011 K4T51043QJ K4T51083QJ K4T51163QJ 512Mb J-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QJ K4T51083QJ K4T51163QJ 512Mb 84FBGA 6-10per) 6-10per K4T51163QJ-BCE7 K4T51163QJ-BCE6 K4T51163QJ-BCF7 K4T51083QJ-BCE6 K4T51163QJ K4T51163QJ-BCE K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8

    PC133 133Mhz cl3

    Abstract: intel date code format
    Text: PC100/PC133 µSODIMM M463S3254DK1 M463S3254DK1 SDRAM µ SODIMM 32Mx64 SDRAM µSODIMM based on 32Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M463S3254DK1 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100/PC133 M463S3254DK1 M463S3254DK1 32Mx64 32Mx16, 400mil 144-pin PC133 133Mhz cl3 intel date code format

    Untitled

    Abstract: No abstract text available
    Text: K4S511633C-YL/N/P CMOS SDRAM 32Mx16 SDRAM 54CSP 1/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.0 Aug 2002 Rev. 1.0 Aug. 2002 K4S511633C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511633C is 536,870,912 bits synchronous high data


    Original     		PDF K4S511633C-YL/N/P 32Mx16 54CSP 16Bit

    K4S511633C

    Abstract: No abstract text available
    Text: K4S511633C-YL/N/P CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S511633C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511633C is 536,870,912 bits synchronous high data


    Original     		PDF K4S511633C-YL/N/P 32Mx16 54CSP 16Bit K4S511633C 16bits,

    Untitled

    Abstract: No abstract text available
    Text: K4S51163LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.1 Aug. 2002 K4S51163LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply


    Original     		PDF K4S51163LC-YG/S 32Mx16 54CSP 16Bit

    K4S51163LC-YG

    Abstract: K4S51163LC
    Text: K4S51163LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 1C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S51163LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply


    Original     		PDF K4S51163LC-YG/S 32Mx16 54CSP 16Bit K4S51163LC 16bits, K4S51163LC-YG

    K4S51153LC

    Abstract: No abstract text available
    Text: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply


    Original     		PDF K4S51153LC-YG/S 32Mx16 54CSP 16Bit K4S51153LC 16bits,

    Untitled

    Abstract: No abstract text available
    Text: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.1 Aug. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply


    Original     		PDF K4S51153LC-YG/S 32Mx16 54CSP 16Bit

    samsung ddr3

    Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
    Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung


    Original     		PDF 256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket

    ddr3

    Abstract: DDR3 SDRAM Samsung ddr3 1600 SDRAM DDR3 64MX8 K4B511646E-ZCF8 DDR3 "application note" DDR3 SDRAM Document
    Text: Preliminary DDR3 SDRAM 512Mb E-die DDR3 SDRAM 512Mb E-die DDR3 SDRAM Specification August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF 512Mb ddr3 DDR3 SDRAM Samsung ddr3 1600 SDRAM DDR3 64MX8 K4B511646E-ZCF8 DDR3 "application note" DDR3 SDRAM Document

    M464S6554MTS

    Abstract: M464S6554MTS-C1H M464S6554MTS-C1L M464S6554MTS-C75 32MX16 K4S511632M
    Text: Preliminary PC133/PC100 SODIMM M464S6554MTS M464S6554MTS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6554MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M464S6554MTS M464S6554MTS 64Mx64 32Mx16, 400mil 144-pin M464S6554MTS-C1H M464S6554MTS-C1L M464S6554MTS-C75 32MX16 K4S511632M

    DDR266

    Abstract: DDR333 PC2700 WV3EG232M64STSU-D4
    Text: White Electronic Designs WV3EG232M64STSU-D4 PRELIMINARY* 512MB – 2x32Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION PC2700 @ CL2.5 The WV3EG232M64STSU is a 2x32Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eight 32Mx16


    Original     		PDF WV3EG232M64STSU-D4 512MB 2x32Mx64 PC2700 WV3EG232M64STSU 512Mb 32Mx16 DDR266 DDR333 PC2700 WV3EG232M64STSU-D4

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G