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    Samsung Electro-Mechanics K4T51163QJ-BCE6000

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    Bristol Electronics K4T51163QJ-BCE6000 5 1
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    Samsung Semiconductor K4T51163QJ-BCE60

    32M X 16 DDR DRAM, 0.45 ns, PBGA84
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    Quest Components K4T51163QJ-BCE60 4
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    K4T51163QJ-BCE60 4
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    Samsung Electronics Co. Ltd K4T51163QJ-BCE6T00

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    Velocity Electronics K4T51163QJ-BCE6T00 45
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    K4T51163QJ-BCE7

    Abstract: K4T51163QJ-BCE6 K4T51163QJ-BCF7 K4T51083QJ-BCE6 K4T51163QJ K4T51163QJ-BCE K4T51083QJ K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8
    Text: Rev. 1.0, Mar. 2011 K4T51043QJ K4T51083QJ K4T51163QJ 512Mb J-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QJ K4T51083QJ K4T51163QJ 512Mb 84FBGA 6-10per) 6-10per K4T51163QJ-BCE7 K4T51163QJ-BCE6 K4T51163QJ-BCF7 K4T51083QJ-BCE6 K4T51163QJ K4T51163QJ-BCE K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8

    K4T51163QJ-BCE6

    Abstract: K4T51163QJ-BCE7 K4T51163QJ-BCF7 K4T51163QJ K4T51083QJ-BCE6 K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8 K4T51083QJ K4T51083QJ-BCF7
    Text: Rev. 1.1, Jul. 2011 K4T51043QJ K4T51083QJ K4T51163QJ 512Mb J-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T51043QJ K4T51083QJ K4T51163QJ 512Mb 84FBGA 6-10per) 6-10per K4T51163QJ-BCE6 K4T51163QJ-BCE7 K4T51163QJ-BCF7 K4T51163QJ K4T51083QJ-BCE6 K4T51083QJ-BCE7 K4T51163QJBCE6 K4T51163QJ-BCF8 K4T51083QJ-BCF7