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    SAMSUNG MEMORY Search Results

    SAMSUNG MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy
    HM1-6516-9 Rochester Electronics LLC Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Visit Rochester Electronics LLC Buy
    AM27C256-55DM/B Rochester Electronics AM27C256 - 256K (32KX8) CMOS EPROM Visit Rochester Electronics Buy

    SAMSUNG MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.


    Original     		K7K1636T2C K7K1618T2C 512Kx36 K7S1636T4C K7S1618T4C 1Mx18 11x15 PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF

    SAMSUNG GDDR4

    Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
    Text: Samsung High-Performance GDDR4 Graphics Memory Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung’s GDDR4  is next-generation, Three-dimensional graphics applications require advanced memory with exceptional performance. Samsung’s GDDR4 memory delivers an ultra-fast


    Original     		512Mb 4Mx32 K4D263238 8Mx16 K4D261638 128Mb DS-07-GDRAM-001 SAMSUNG GDDR4 GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR PDF

    gddr3

    Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
    Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3  is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important


    Original     		512Mb 200Mhz 128Mb 8Mx16 K4D261638F-TC5A DS-06-GDRAM-001 gddr3 SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B PDF

    samsung eMMC 4.5

    Abstract: eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2
    Text: Samsung Mobile Memory Taking Mobility to New Storage Horizons Mobile DRAM | Multi-Chip Packages | eMMC Samsung Mobile Memory Mobile DRAM The future of Mobile DRAM Performance and battery life are the key metrics upon which mobile electronics are measured. Samsung Mobile


    Original     		BRO-09-DRAM-001 samsung eMMC 4.5 eMMC samsung* lpddr2 lpddr2 SAMSUNG emmc emmc 4.5 emmc samsung SAMSUNG moviNAND lpddr2 mcp samsung lpddr2 PDF

    samsung ddr3

    Abstract: samsung ddr3 2010 48GB ddr3 datasheet DDR3 memory HS21 HS22V HS21XM
    Text: IBM BladeCenter with Samsung Green DDR3 Less Energy. More Speed. Less Energy. More Reliability. www.samsung.com/GreenMemory BladeCenter HX5 Scalable to 2P > 4P MAX5 for max memory BladeCenter HS22 2P, max192GB with Samsung 16GB VLP BladeCenter HS22V 2P, max 288GB with Samsung


    Original     		max192GB HS22V 288GB DS-10-IBM samsung ddr3 samsung ddr3 2010 48GB ddr3 datasheet DDR3 memory HS21 HS22V HS21XM PDF

    74lvc3245

    Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
    Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04


    Original     		128MB 0000h 0001h 0002h 12bit 16bit 74lvc3245 SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL PDF

    samsung 8Gb nand flash

    Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
    Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash


    Original     		108MB/s 256Mb BR-06-NAND-001 samsung 8Gb nand flash oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr PDF

    Flex-OneNAND Samsung

    Abstract: OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader
    Text: OneNAND Data Protection Application Note Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		Apr-2009 Flex-OneNAND Samsung OneNAND samsung note 3 samsung onenand Flex-OneNAND SAMSUNG SEMICONDUCTOR flexonenand PMIC OneNAND reader PDF

    samsung nor flash

    Abstract: NOR FLASH internal flash corruption
    Text: Program Method of NOR Flash Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		Apr-2009 80us/11 32Words 64Words samsung nor flash NOR FLASH internal flash corruption PDF

    samsung ddr3

    Abstract: DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket
    Text: Samsung DDR3 SDRAM Next-Generation Memory Will Reach 1.6Gb/second Samsung DDR3 Unbuffered DIMMs will be available in densities from 256MB to 2GB and DDR3; component densities are 512Mb to 1Gb. Massive Bandwidth and Low Power Consumption Tomorrow’s main memory standard, Samsung


    Original     		256MB 512Mb Samsun378B2873CZ0-C 128Mx8) 256Mx64 M378B5673CZ0-C DS-06-DRAM-006 samsung ddr3 DDR3 socket datasheet DDR3 jedec ddr2 laptop pin DDR3 DIMM 240 pin names "DDR3 SDRAM" DDR3 1gb dimm DDR3 DIMM DDR3 dimm socket DDR3 socket PDF

    SAMSUNG MCP

    Abstract: MCP MEMORY samsung board design guide mcp samsung
    Text: Mobile Emul. Board Application Note Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		Apr-2009 SAMSUNG MCP MCP MEMORY samsung board design guide mcp samsung PDF

    K8S2815ET

    Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
    Text: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		May-2009 UINT16; UINT16 0x555 512Mbit, K8S2815ET samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT PDF

    Samsung k9f1208u

    Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
    Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.


    Original     		AN1838 NAND128-A, NAND256-A, NAND512-A, NAND01G-A, 128Mbits Samsung k9f1208u SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory PDF

    "at command" Samsung

    Abstract: samsung nor flash 555h NOR FLASH
    Text: SEC-Mobile-ROM Protection Sequence For NOR Flash Application Note Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		555h/AAh 2AAh/55h 555h/90h XXX/00h "at command" Samsung samsung nor flash 555h NOR FLASH PDF

    Untitled

    Abstract: No abstract text available
    Text: SEC-MFAEG-MUtRAM-AN Software MRS for UtRAM Application Note Version 1.0, Nov-2006 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		Nov-2006 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR: AN OVERVIEW Samsung Semiconductor is a unit of the Samsung Group, a worldwide, Korean-based chaebol conglomer­ ate of 34 companies that enjoyed sales of $48 billion in 1992. Sales of Samsung Electronics Co., Ltd., of which Samsung Semiconductor is a division, were more than


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KMM5401000B/BG GD1514b 523 I SP1GK DRAM MODULES 1Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5401000B is a 1M bitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5401000B/BG GD1514b 1Mx40 KMM5401000B bitsx40 20-pin 72-pin 110ns KMM5401000B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L7E D • 7^4142 KMM540512CM DD1 S D 7 0 ‘I b i DRAM MODULES 512Kx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM540512CM isa512Kbitsx40 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM540512CM 512Kx40 KMM540512CM isa512Kbitsx40 256Kx4 20-pin 72-pin KMM540512CM-6 KMM540512CM-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E ]> QD1SSSQ ^35 I SMGK • KM M5324000V/VG/VP DRAM MODULES 4M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324000V is a 4M bitsx32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		M5324000V/VG/VP KMM5324000V bitsx32 24-pin 72-pin 110ns KMM5324000V-7 130ns KMM5324000V-8 PDF

    samsung LRA

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h 4E D • TTbMlMi 0014742 4flb ■ SMÛK KMM536512W3/W3G DRAM MODULES 512K x36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM536512W3 is a512K bit x 36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM536512W3/W3G KMM536512W3 a512K 40-pin 72-pin 22fiF KMM536512W3-7 130ns KMM536512W3-8 samsung LRA PDF

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM5916000/T KMM5916000/T KM41C16000/T 24-pin 30-pin 22/uF KMM5916000-6 110ns KMM5916000-7 PDF