S3F833BXZZ-QX8B
Abstract: S3F84NBXZZ-QT8B s3f84k4xzz-dk94 S3F828BXZZ-QW8B S3F84B8XZZ-DK98 S3F833BXZZ S3F84VBXZZ-QT8B S3F8289XZZ-QW89 S3F84K4XZZ S3F828BXZZ-TW8B
Text: Dec. 2009 MCU/EEPROM Selection Guide - Samsung MCU Product Line-up - 4-bit Microcontroller - 8-bit Microcontroller - 16-bit Microcontroller - 32-bit Microcontroller - Serial EEPROM - EOL List - MCU Product Numbering Guide - Samsung MCU Tool Guide PAGE 2 Samsung MCU Product Line-up
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16-bit
32-bit
F80K5
F80P5*
F94C8*
F84P4
F9444
F80M4
F84C4
F84K4
S3F833BXZZ-QX8B
S3F84NBXZZ-QT8B
s3f84k4xzz-dk94
S3F828BXZZ-QW8B
S3F84B8XZZ-DK98
S3F833BXZZ
S3F84VBXZZ-QT8B
S3F8289XZZ-QW89
S3F84K4XZZ
S3F828BXZZ-TW8B
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-12-ALL-001
samsung ddr3 ram MTBF
KLM2G1HE3F-B001
KLM4G1FE3B-B001
KLMAG2GE4A-A001
k4B2G1646
KLMAG
KLM8G2FE3B-B001
K4B2G0446
klm8g
k4x2g323pd
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K9HDG08U1A
Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks
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BR-11-ALL-001
K9HDG08U1A
K9LCG08U0A
k4g10325fe-hc04
KLM2G1DEHE-B101
K9WAG08U1B-PIB0
k9gag08u0e
Ltn140at
SAMSUNG HD502HJ
hd204ui
klm2g1dehe
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K7Q163662B-FC16
Abstract: date code body marking samsung
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q163662B-FC16
date code body marking samsung
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K7Q161862B-EC16
Abstract: ntram
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q161862B-EC16
ntram
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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lh62256
Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s
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HM62256
K6T0808C1
CY62256
TC55257
uPD43256
W24257
GM76C256C
LH62256
HM628128
K6T1008C2
lh62256
128k x8 SRAM TSOP
upd431000-70
TC55257
Hitachi HM628512 EOL
hm62v16512
CY7C1049
hm62256
K6R4004V1C
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K4S281632I-UC75
Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432I
K4S280832I
K4S281632I
128Mb
215KB
K4S281632I-TC75
K4S281632I-UC60
K4S281632I-UC75
K4S281632I-UI75
K4S281632I-UL75
K4S281632I
8MB SDRAM
8Mb samsung SDRAM
K4S281632IUC60
K4S281632IUC75
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4mx32
Abstract: GDDR
Text: Date : May, 2003 Application Application Note Note Title : x32 GDDR/GDDR2 SDRAM Operation at DLL-Off Mode Product Planning & Application Eng.Team Memory Technology & Product Division Samsung Electronics Co., Ltd San24, Nongseo-Ree, Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea R.O.K
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San24,
800Mbps
8Mx32
4Mx32
GDDR
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K9F1208R0C-JIB0
Abstract: K9F1208U0C K9F1208U0C-PCB0 K9F1208R0C-JIB K9F1208R0C K9F1208R0C-JIB00 SAMSUNG NOR Flash Qualification Report
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208R0C-JIB0T
824KB
K9F1208R0C-JIB00
K9F1208R0C-JIB0T
K9F1208R0C-JIB0
K9F1208U0C-PCB0
K9F1208R0C-JIB
SAMSUNG NOR Flash Qualification Report
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PDF
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SAMSUNG NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0000
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC 68FBGA & 84FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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200pin
64-bit
68FBGA
84FBGA
Q1/2006
M470T5669AZ0-CE6
396KB
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SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
K9F1208U0C-FIB00
\AVNET\09082007\SAMS\K9F1208U0C-PIB0T00
07-Sep-2007
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
SAMSUNG NAND Flash Qualification Report
K9F1208U0CJIB0
marking date code samsung semiconductor
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K9F1208U0C-PCB0
Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F1208U0C
K9F1208R0C
K9F1208B0C
K9F1208X0C
o824KB
K9F1208U0C-FIB00
K9F1208U0C-JIB00
K9F1208U0C-JIB0T
K9F1208U0C-PCB00
K9F1208U0C-PCB0T
K9F1208U0C-PCB0
marking date code samsung semiconductor
K9F1208U0CPCB0
K9F1208U0C-JIB0
K9F1208U0CJIB0
K9F1208U0C-PIB
K9F1208U0CPIB0
K9F1208U0CJIB0T
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M395T5166AZ4
Abstract: DDR3 ECC SODIMM Fly-By Topology DFX SAMSUNG
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb A-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
M395T5166AZ4-CD5
Q1/2006
Q3/2006
M395T5166AZ4-CE6
Q2/2006
432KB
M395T5166AZ4
DDR3 ECC SODIMM Fly-By Topology
DFX SAMSUNG
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PDF
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k4B2G1646
Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.
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intel 7882
Abstract: K4T51083QC-ZCE6 DDR3 ECC SODIMM Fly-By Topology M395T2953CZ4-CD51 M395T5750cz4
Text: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 512Mb C-die RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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240pin
512Mb
M395T6553CZ4-CD5
Q3/2006
Q4/2006
M395T6553CZ4-CE6
Q1/2006
614KB
intel 7882
K4T51083QC-ZCE6
DDR3 ECC SODIMM Fly-By Topology
M395T2953CZ4-CD51
M395T5750cz4
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PDF
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Untitled
Abstract: No abstract text available
Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7A323600M
K7A321800M
1Mx36
2Mx18
100TQFP
K7A323600M-QC200
Q2/2003
Q3/2003
Q4/2006
Q1/2007
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PDF
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K7M323635C
Abstract: K7M323635C-PC75
Text: K7M323635C K7M321835C 1Mx36 & 2Mx18 Flow-Through NtRAMTM 36Mb NtRAMTM Specification 100 TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7M323635C
K7M321835C
1Mx36
2Mx18
equipmC-PI750
Q1/2006
Q2/2006
386KB
140KB
K7M323635C-PC750
K7M323635C-PC75
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PDF
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K4J52324QC
Abstract: K4J52324QC-bj11
Text: 512M GDDR3 SDRAM K4J52324QC 512Mbit GDDR3 SDRAM Revision 1.5 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K4J52324QC
512Mbit
r7/08/13
450KB
K4J52324QC-AC200
K4J52324QC-BC140
K4J52324QC-BC200
K4J52324QC-BJ110
K4J52324QC-BJ120
K4J52324QC-BJ1A0
K4J52324QC
K4J52324QC-bj11
|
PDF
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K4H510438D-ZCB3
Abstract: K4H510438DZCCC tsop-ii 66PIN JEDEC TRAY "Material Declaration Sheet" tsop-ii 66 JEDEC TRAY k4h511638d
Text: K4H510438D K4H510838D K4H511638D DDR SDRAM 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4H510438D
K4H510838D
K4H511638D
512Mb
430KB
438KB
204KB
DDR266/333,
66TSOP2)
430KB
K4H510438D-ZCB3
K4H510438DZCCC
tsop-ii 66PIN JEDEC TRAY
"Material Declaration Sheet"
tsop-ii 66 JEDEC TRAY
k4h511638d
|
PDF
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K4S641632k uc60
Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM
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4K/64ms
128Mb,
256Mb,
8K/64ms
512Mb,
80TYP
25TYP
K4S641632k uc60
K4S561632J-UC60
K4S280832K-UC75
K4S511632D-UC75
K4S560832H
K4S510832D-UC75
K4S281632K
M390S6450HUU
K4S561632J
K4S641632N
|
PDF
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