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    K6T0808C1 Price and Stock

    Samsung Semiconductor K6T0808C1D-TB70

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    Bristol Electronics K6T0808C1D-TB70 2,305
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    Samsung Semiconductor K6T0808C1D-DB70

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    Bristol Electronics K6T0808C1D-DB70 768 1
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    Quest Components K6T0808C1D-DB70 604
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    K6T0808C1D-DB70 23
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    K6T0808C1D-DB70 10
    • 1 $5.67
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    Samsung Semiconductor K6T0808C1D-GB70000

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    Bristol Electronics K6T0808C1D-GB70000 488
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    Samsung Semiconductor K6T0808C1DTB55

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    Bristol Electronics K6T0808C1DTB55 87
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    Samsung Semiconductor K6T0808C1D-GL70

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    Bristol Electronics K6T0808C1D-GL70 30
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    Quest Components K6T0808C1D-GL70 24
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    K6T0808C1 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Type PDF
    K6T0808C1D Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-B Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-BB55 Samsung Electronics SRAM Chip: Asynchronous: 256Kbit: SDR: 5V Supply: Commercial: SOP: 28-Pin Original PDF
    K6T0808C1D-BB70 Samsung Electronics SRAM Chip: Asynchronous: 256Kbit: SDR: 5V Supply: Commercial: SOP: 28-Pin Original PDF
    K6T0808C1D-BF70 Samsung Electronics SRAM Chip: Asynchronous: 256Kbit: SDR: 5V Supply: Industrial: SOP: 28-Pin Original PDF
    K6T0808C1D-BL55 Samsung Electronics SRAM Chip: Asynchronous: 256Kbit: SDR: 5V Supply: Commercial: SOP: 28-Pin Original PDF
    K6T0808C1D-BL70 Samsung Electronics SRAM Chip: Asynchronous: 256Kbit: SDR: 5V Supply: Commercial: SOP: 28-Pin Original PDF
    K6T0808C1D-DB55 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-DB55 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-DB70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-DL55 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-DL70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-F Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D Family Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GB55 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GB70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GF70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GL55 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GL70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF
    K6T0808C1D-GP70 Samsung Electronics 32Kx8 bit Low Power CMOS Static RAM Original PDF

    K6T0808C1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    K6T0808C1D-GB55

    Abstract: RL70 K6T0808C1D-GB70 package tsop1 K6T0808C1D K6T0808C1D-DB70 K6T0808C1D-DL55 k6t0808c1d-gl70
    Text: K6T0808C1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18, 1997 Design target 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA


    Original     		PDF K6T0808C1D 32Kx8 KM62256DL/DLI KM62256DL-L KM62256DLI-L KM62256D-4/5/7 KM62256DL-L/DLI-L K6T0808C1D-GB55 RL70 K6T0808C1D-GB70 package tsop1 K6T0808C1D-DB70 K6T0808C1D-DL55 k6t0808c1d-gl70

    K6T0808C1D-DL70

    Abstract: K6T0808C1D Family k6t0808c1d-db70 package tsop1 RL70 K6T0808C1D K6T0808C1D-GL55 K6T0808C1D-L KM62256DLI-L KM62256DL-L
    Text: K6T0808C1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Initial draft May 18, 1997 Design target 0.1 First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA


    Original     		PDF K6T0808C1D 32Kx8 KM62256DL/DLI KM62256DL-L KM62256DLI-L KM62256D-4/5/7 KM62256DL-L/DLI-L K6T0808C1D-DL70 K6T0808C1D Family k6t0808c1d-db70 package tsop1 RL70 K6T0808C1D-GL55 K6T0808C1D-L

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    MBI5024

    Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
    Text: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168


    Original     		PDF CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    D4364c-15L

    Abstract: NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15
    Text: Technical Report UCAM-CL-TR-536 ISSN 1476-2986 Number 536 Computer Laboratory Low temperature data remanence in static RAM Sergei Skorobogatov June 2002 15 JJ Thomson Avenue Cambridge CB3 0FD United Kingdom phone +44 1223 763500 http://www.cl.cam.ac.uk/ c 2002 Sergei Skorobogatov


    Original     		PDF UCAM-CL-TR-536 sps32 D4364c-15L NEC D4364C d4364c d4364c-15 TC5564APL-15 78L05 NEC Hyundai Semiconductor hy6264 hy6264ap-10LL GoldStar gm76c88al GoldStar gm76c88al-15

    CY62128

    Abstract: W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258
    Text: Low-Power SRAM Cross Reference Guide 2 of 2 Density (bits) Org. (bits) 64K 8K*8 Company Part No. Operating Current mA (max.) (° C) Commercial Extended Industrial (0~70) (-20~85) (-40~85) Winbond W2465 UTRON UT6264 Cypress CY6264 100 W24256 60 Winbond 10 for LL


    Original     		PDF W2465 UT6264 CY6264 W24256 W24257 W24LH8 K6T0808C1D W24258 D-22083 CY62128 W24256 BSI winbond Cross Reference UT621024 CY6264 K6T0808C1D K6T0808V1D UT6264 W24257 W24258

    X7055

    Abstract: sram cross reference W24256 cy6264 cross UT621024 UT6264 CY6264 K6T0808C1D bs62lv1024 W24257
    Text: Low-Power SRAM Cross Reference Guide 1 of 2 Density (bits) Org. (bits) 64K 8K*8 Operating Temperature (° C) Part No. Operating Voltage (V) Winbond W2465 5 UTRON UT6264 5 Cypress CY6264 5 W24256 5V (4.5~5.5) X W24257 5V (4.5~5.5) X W24L257 3.15~ 5.5 X W24258


    Original     		PDF W2465 UT6264 CY6264 W24256 W24257 W24L257 W24258 W24LH8 K6T0808C1D K6T0808V1D X7055 sram cross reference W24256 cy6264 cross UT621024 UT6264 CY6264 K6T0808C1D bs62lv1024 W24257

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12