Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S83054 Search Results

    SF Impression Pixel

    S83054 Price and Stock

    Renesas Electronics Corporation ICS83054AGILFT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ameya Holding Limited ICS83054AGILFT 2,911
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Integrated Device Technology Inc ICS83054AGILFT

    Stock
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Flip Electronics ICS83054AGILFT 1,312
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    S83054 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S83054F

    Abstract: S83054 S83054FM1 S8305 scintillator Nal bialkali S-8305 BURLE INDUSTRIES Corning 5-58 PMT-62
    Text: Return To Product Page S83054F, S83054FM1 Photomultipliers 51-mm 2-Inch Diameter 8-Stage, Head-On PMTs BURLE S83054F and S83054FM1 are two-inch round, 8stage photomultiplier tubes. They employ potassium-cesiumantimonide (bialkali) photocathodes and electron multipliers of the


    Original     		S83054F, S83054FM1 51-mm S83054F S83054FM1 S83054y S83054F S83054 S8305 scintillator Nal bialkali S-8305 BURLE INDUSTRIES Corning 5-58 PMT-62 PDF

    Vishay DaTE CODE 1206-8

    Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
    Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Vishay DaTE CODE 1206-8 AN811 1206-8 chipfet layout PDF

    54AIS

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 11-Mar-11 54AIS PDF

    SI5433BDC-T1-GE3

    Abstract: Si5433BDC Si5433BDC-T1-E3 Vishay DaTE CODE 1206-8
    Text: Si5433BDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 6.7 0.050 at VGS = - 2.5 V - 5.9 0.070 at VGS = - 1.8 V - 5.0 Qg (Typ.) 15 • Halogen-free According to IEC 61249-2-21


    Original     		Si5433BDC Si5433BDC-T1-E3 Si5433BDC-T1-GE3 18-Jul-08 Vishay DaTE CODE 1206-8 PDF

    VISHAY MARKING BM

    Abstract: Si5445BDC
    Text: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 18-Jul-08 VISHAY MARKING BM PDF

    SI5424DC-T1-GE3

    Abstract: Si5424DC-T1-E3
    Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 11-Mar-11 PDF

    A2V-16

    Abstract: No abstract text available
    Text: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A2V-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 11-Mar-11 PDF

    Si5404BDC

    Abstract: Si5404BDC-T1-E3
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC


    Original     		Si5424DC Si5424DC-T1-E3 Si5424DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    1206 8 ChipFET

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET PDF

    TSOP 48 thermal resistance

    Abstract: Vishay DaTE CODE 1206-8
    Text: Si5433BDC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.037 at VGS = - 4.5 V - 6.7 0.050 at VGS = - 2.5 V - 5.9 0.070 at VGS = - 1.8 V - 5.0 Qg (Typ.) 15 • Halogen-free According to IEC 61249-2-21


    Original     		Si5433BDC Si5433BDC-T1-E3 Si5433BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 48 thermal resistance Vishay DaTE CODE 1206-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5445BDC Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.033 at VGS = - 4.5 V - 7.1 0.043 at VGS = - 2.5 V - 6.2 0.060 at VGS = - 1.8 V - 5.3 Qg (Typ.) 14 • Halogen-free According to IEC 61249-2-21


    Original     		Si5445BDC Si5445BDC-T1-E3 Si5445BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si5402BDC

    Abstract: Si5402BDC-T1-GE3
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 18-Jul-08 PDF

    Si5401DC

    Abstract: Si5401DC-T1-E3
    Text: Si5401DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 7.1 - 20 0.040 at VGS = - 2.5 V - 6.4 0.053 at VGS = - 1.8 V - 5.5 Qg (Typ.) 16.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5401DC Si5401DC-T1-E3 Si5401Dlectual 18-Jul-08 PDF

    Si5475BDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5441BDC Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 6.1 - 20 0.052 at VGS = - 3.6 V - 5.7 0.080 at VGS = - 2.5 V - 4.6 Qg (Typ.) 11.5 • Halogen-free According to IEC 61249-2-21


    Original     		Si5441BDC Si5441BDC-T1-E3 Si5441BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si5404BDC Si5404BDC-T1-E3 Si5404BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    S83054

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 11-Mar-11 S83054 PDF