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    Vishay Siliconix SI5475BDC-T1-E3

    MOSFET P-CH 12V 6A 1206-8
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    Vishay Siliconix SI5475BDC-T1-E3/BKN

    P-CHANNEL 12-V (D-S) MOSFET | Siliconix / Vishay SI5475BDC-T1-E3/BKN
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    SI5475BDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI5475BDC-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A 1206-8 Original PDF
    SI5475BDC-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A 1206-8 Original PDF

    SI5475BDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    diode 1334

    Abstract: transistor 5457 AN609 Si5475BDC 73816
    Text: Si5475BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si5475BDC AN609 01-Mar-06 diode 1334 transistor 5457 73816

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS


    Original     		PDF Si5475BDC Si5475BDC-T1--E3 08-Apr-05 Si5475BDC-T1-E3

    1206 8 ChipFET

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET

    Si5475BDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 18-Jul-08

    SI5475BDC

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1--E3 S-50939--Rev. 09-May-05

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si5475BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5475BDC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET PRODUCT SUMMARY −12 FEATURES rDS(on) (W) ID (A)a 0.028 @ VGS = −4.5 V −6 0.039 @ VGS = −2.5 V −6 0.054 @ VGS = −1.8 V −6 VDS (V) Qg (Typ) D TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1--E3 08-Apr-05

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: New Product Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 VDS (V) - 12 • TrenchFET Power MOSFET: 1.8 V Rated Qg (Typ.) RoHS


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 08-Apr-05

    Si5475BDC

    Abstract: Si5475BDC-T1-E3
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		PDF Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11

    Si5475BDC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5475BDC S-50905Rev. 16-May-05

    SI5475DDC-T1-GE3

    Abstract: Si5475BDC Si5475BDC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5475DDC vs. Si5475BDC Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5475DDC-T1-GE3 replaces Si5475BDC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5475DDC Si5475BDC Si5475DDC-T1-GE3 Si5475BDC-T1-E3 06-Aug-08

    74119

    Abstract: Si5475BDC Si5475BDC-T1-E3 Si5475DC Si5475DC-T1
    Text: Specification Comparison Vishay Siliconix Si5475BDC vs. Si5475DC Description: P-Channel, 12 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5475BDC-T1-E3 Replaces Si5475DC-T1-E3 Si5475BDC-T1 Replaces Si5475DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5475BDC Si5475DC Si5475BDC-T1-E3 Si5475DC-T1-E3 Si5475BDC-T1 Si5475DC-T1 74119

    SI2333DS-T1-E3

    Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
    Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)


    Original     		PDF SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8