S83054F
Abstract: S83054 S83054FM1 S8305 scintillator Nal bialkali S-8305 BURLE INDUSTRIES Corning 5-58 PMT-62
Text: Return To Product Page S83054F, S83054FM1 Photomultipliers 51-mm 2-Inch Diameter 8-Stage, Head-On PMTs BURLE S83054F and S83054FM1 are two-inch round, 8stage photomultiplier tubes. They employ potassium-cesiumantimonide (bialkali) photocathodes and electron multipliers of the
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S83054F,
S83054FM1
51-mm
S83054F
S83054FM1
S83054y
S83054F
S83054
S8305
scintillator Nal
bialkali
S-8305
BURLE INDUSTRIES
Corning 5-58
PMT-62
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ortec 142
Abstract: ortec 142 preamplifier ortec 142 A ortec preamplifier TP136 temperatureof22 filament bulb
Text: Return To Product Page S83056F Photomultiplier 76 mm 3 inch -Hexagonal, 8-Stage, End-Window PMT ! High Quantum Efficiency: Typically 32.6% at 370 nm ! Excellent Collection of Photoelectrons from all Areas of the Useful Photocathode ! Typical Pulse Height Resolution:
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S83056F
S83056F
ortec 142
ortec 142 preamplifier
ortec 142 A
ortec preamplifier
TP136
temperatureof22
filament bulb
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ortec 142 preamplifier
Abstract: ortec 142 ortec preamplifier ortec 142 A TP136
Text: Return To Product Page S83056F Photomultiplier 76 mm 3 inch -Hexagonal, 8-Stage, End-Window PMT ! High Quantum Efficiency: Typically 32.6% at 370 nm ! Excellent Collection of Photoelectrons from all Areas of the Useful Photocathode ! Typical Pulse Height Resolution:
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S83056F
S83056F
ortec 142 preamplifier
ortec 142
ortec preamplifier
ortec 142 A
TP136
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S8305MG
Abstract: No abstract text available
Text: S8305MG TECHNICAL DATA Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 830 nm Optical Ouput Power: 5 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function LD Cathode
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S8305MG
S8305MG
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AJ2283
Abstract: PMT-62 B270 scintillator S-8305
Text: Return To Product Page S83053F, S83053FM1 Photomultipliers 60-mm 2.36 Inch Hexagonal 8-Stage, Head-On PMTs BURLE S83053F and S83053FM1 are sixty mm hexagonal, 8-stage photomultiplier tubes. They employ potassium-cesium-antimonide (bialkali) photocathodes and electron multipliers of the box-and-grid
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S83053F,
S83053FM1
60-mm
S83053F
S83053FM1
AJ2283
PMT-62
B270
scintillator
S-8305
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Vishay DaTE CODE 1206-8
Abstract: AN811 SI5424DC-T1-GE3 1206-8 chipfet layout
Text: Si5424DC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.024 at VGS = 10 V ID (A)a 6 0.030 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET Qg (Typ.) 11 nC
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Si5424DC
Si5424DC-T1-E3
Si5424DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE 1206-8
AN811
1206-8 chipfet layout
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Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si7216DN-T1-E3
Abstract: Si7216DN si7216
Text: Si7216DN Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm
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Si7216DN
Si7216DN-T1-E3
Si7216DN-T1-GE3
11-Mar-11
si7216
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Si7308DN
Abstract: Si7308DN-T1-E3 Si7308DN-T1-GE3
Text: Si7308DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 6 0.072 at VGS = 4.5 V 6 VDS (V) 60 Qg (Typ.) 13 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7308DN
Si7308DN-T1-E3
Si7308DN-T1-GE3
11-Mar-11
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TP0202K
Abstract: TP0202K-T1-E3 marking code vishay SILICONIX sot-23
Text: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3
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TP0202K
O-236
OT-23)
TP0202K-T1-E3
11-Mar-11
TP0202K
TP0202K-T1-E3
marking code vishay SILICONIX sot-23
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Si7802DN
Abstract: No abstract text available
Text: Si7802DN Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) ID (A) 0.435 at VGS = 10 V 1.95 0.445 at VGS = 6 V 1.9 • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET
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Si7802DN
Si7802DN-T1-E3
Si7802DN-T1-GE3
11-Mar-11
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Si2308BDS-T1-GE3
Abstract: si2308bds
Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2308BDS
O-236
SSOT23)
Si2308BDS-T1-E3
Si2308BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Si7411DN
Abstract: Si7411DN-T1-E3 Si7411DN-T1-GE3
Text: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si7411DN
Si7411DN-T1-E3
Si7411DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7904BDN Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.030 at VGS = 4.5 V 6 0.036 at VGS = 2.5 V 6 0.045 at VGS = 1.8 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7904BDN
Si7904BDN-T1-E3
Si7904BDN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7804DN Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7804DN
Si7804DN-T1-E3
Si7804DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7411DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 11.4 - 20 0.025 at VGS = - 2.5 V - 9.9 0.034 at VGS = - 1.8 V - 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated
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Si7411DN
Si7411DN-T1-E3
Si7411DN-T1-GE3
11-Mar-11
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54AIS
Abstract: No abstract text available
Text: Si5404BDC Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.028 at VGS = 4.5 V 7.5 0.039 at VGS = 2.5 V 6.3 Qg (Typ.) 6.3 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si5404BDC
Si5404BDC-T1-E3
Si5404BDC-T1-GE3
11-Mar-11
54AIS
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Untitled
Abstract: No abstract text available
Text: Si7119DN Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 1.05 at VGS = - 10 V - 3.8e 1.10 at VGS = - 6.0V - 3.6e • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7119DN
Si7119DN-T1-E3
Si7119DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7214DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.04 at VGS = 10 V 6.4 0.047 at VGS = 4.5 V 5.9 APPLICATIONS PowerPAK 1212-8 • Synchronous Rectification S1 3.30 mm • Halogen-free According to IEC 61249-2-21
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Si7214DN
Si7214DN-T1-E3
Si7214DN-T1-GE3
11-Mar-11
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SI7802DN
Abstract: No abstract text available
Text: Si7802DN Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) ID (A) 0.435 at VGS = 10 V 1.95 0.445 at VGS = 6 V 1.9 • Halogen-free According to IEC 61249-2-21 Available • PWM-Optimized TrenchFET Power MOSFET
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Si7802DN
Si7802DN-T1-E3
Si7802DN-T1-GE3
11-Mar-11
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SI7806ADN-T1-GE3
Abstract: Si7806ADN Si7806ADN-T1-E3
Text: Si7806ADN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.011 at VGS = 10 V 14 0.016 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 S 3.30 mm • DC/DC Converters - Secondary Synchronous Rectifier - High-Side MOSFET in Synchronous Buck
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Si7806ADN
Si7806ADN-T1-E3
Si7806ADN-T1-GE3
18-Jul-08
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Si7403BDN
Abstract: Si7403BDN-T1-E3 Si7403BDN-T1-GE3
Text: Si7403BDN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.074 at VGS = - 4.5 V - 8c 0.110 at VGS = - 2.5 V - 7.4 Qg (Typ.) 5.6 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 2.5 V Rated
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Si7403BDN
Si7403BDN-T1-E3
Si7403BDN-T1-GE3
18-Jul-08
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Si2308BDS-T1-GE3
Abstract: Si2308BDS SI2308BDS-T1-E3
Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2308BDS
O-236
SSOT23)
Si2308BDS-T1-E3
Si2308BDS-T1-GE3
15lectual
18-Jul-08
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TP0101K
Abstract: TP0101K-T1-E3 83053
Text: TP0101K Vishay Siliconix P-Channel 20-V D-S MOSFET, Low-Threshold FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • ESD Protected: 3000 V (A)e 0.65 at VGS = - 4.5 V
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TP0101K
O-236
OT-23)
TP0101K-lectual
18-Jul-08
TP0101K
TP0101K-T1-E3
83053
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