Untitled
Abstract: No abstract text available
Text: SQD100N04-3m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0036 ID (A) • 100 % Rg and UIS Tested
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SQD100N04-3m6
AEC-Q101
O-252
SQD100N04-3m6-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiRA02DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7625DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7625DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7439DP www.vishay.com Vishay Siliconix P-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7439DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7613DN www.vishay.com Vishay Siliconix SPICE Device Model Si7613DN DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7613DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR172ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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SiR172ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7465DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si7465DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7415DN www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si7415DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7463ADP www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si7463ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQD100N04-3m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.0036 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • Package with Low Thermal Resistance
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Original
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SQD100N04-3m6L
AEC-Q101
O-252
SQD100N04-3m6L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si8808DB
S12-2921-Rev.
10-Dec-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7464DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si7464DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7461DP www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si7461DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7431DP www.vishay.com Vishay Siliconix P-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si7431DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7635DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si7635DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR642DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiR642DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7430DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si7430DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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crimper CT 3508
Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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s2513
Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Text: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing
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P-2631996
E146370
LR50370-10
SKINTOP00
s2513
MSM 7225
S1709
E146370
S1113
s1716
SLR-16
s2311
sm 314 1040 D1
S2438
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DS1868
Abstract: LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode
Text: S ystem E x t e n s i o n Data Book CPU Supervisors Digital Potentiometers Silicon Timed Circuits Thermal Products DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for
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28-PIN
DS9003
DS1868
LM 4440 AUDIO AMPLIFIER CIRCUIT
DS1230y-200 battery date codes
circuit diagram laptop motherboard
Scans-049
texas instrument
catalog 74ls
DS1666-50
st c031
s1040 diode
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16Kx 4-BIT PRELIMINARY IDT 100494 FEATURES: DESCRIPTION: • 16,384-w ords x 4 -b it o rg a n iza tio n • A ddress a ccess tim e : 8 /1 0 /1 5n s (max.) • Low p o w e r d issip a tio n : 500m W (typ.) T h e ID T100494 is a 65,536-bit h ig h -sp ee d BiC E M O S ECL
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384-w
T100494
536-bit
400mll)
350mll)
S12-30
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Untitled
Abstract: No abstract text available
Text: îm Dallas Sem iconductor + 5 V P o w e re d T rip le R S -2 3 2 T ra n s m itte r/R e c e i 1te r FEATURES • Operates from a single 5V power supply • 3 drivers and 3 receivers • Meets all EIA RS-232-C specifications • On-board voltage doubler D S 1 2 2 9 —2 0 -P in D IP
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RS-232-C
20-Pin
S1229
DS1229S
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Untitled
Abstract: No abstract text available
Text: S1229 S1229 DALLAS SEMICONDUCTOR +5V Powered Triple R S -2 3 2 T ran sm itter/R eceiver FEATURES PIN ASSIGNMENT KJ • Operates from a single 5V power supply c [ w [ • 3 drivers and 3 receivers • Meets all EIA RS.232.C specifications 19 H GND C 1 -[
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DS1229
T10UT
T20UT
T30UT
R30UT
20-Pln
RS-232
RS-232.
DS1229
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