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    SI8808DB Price and Stock

    Vishay Siliconix SI8808DB-T2-E1

    MOSFET N-CH 30V 4MICROFOOT
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    DigiKey SI8808DB-T2-E1 Reel 6,000 3,000
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    SI8808DB-T2-E1 Cut Tape 211 1
    • 1 $0.43
    • 10 $0.367
    • 100 $0.2552
    • 1000 $0.16198
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    SI8808DB-T2-E1 Digi-Reel 1
    • 1 $0.43
    • 10 $0.367
    • 100 $0.2552
    • 1000 $0.16198
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    Vishay Intertechnologies SI8808DB-T2-E1

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8808DB-T2-E1)
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    Avnet Americas SI8808DB-T2-E1 Reel 3,000
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    SI8808DB-T2-E1 Reel 6 Weeks 3,000
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    Mouser Electronics SI8808DB-T2-E1 4,307
    • 1 $0.43
    • 10 $0.367
    • 100 $0.256
    • 1000 $0.162
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    Verical SI8808DB-T2-E1 3,000 3,000
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    Arrow Electronics SI8808DB-T2-E1 3,000 63 Weeks 3,000
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    Newark SI8808DB-T2-E1 Reel 3,000
    • 1 $0.205
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    TTI SI8808DB-T2-E1 Reel 30,000 3,000
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    Avnet Asia SI8808DB-T2-E1 8 Weeks 3,000
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    EBV Elektronik SI8808DB-T2-E1 7 Weeks 3,000
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    Vishay Intertechnologies SI8808DB-T2-E1.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:900Mv; Power Dissipation:900Mw; No. Of Pins:4Pins Rohs Compliant: No |Vishay SI8808DB-T2-E1.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI8808DB-T2-E1. Reel 3,000
    • 1 $0.205
    • 10 $0.205
    • 100 $0.205
    • 1000 $0.205
    • 10000 $0.169
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    Vishay Intertechnologies SI8808DBT2E1

    N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI8808DBT2E1 3,000
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    SI8808DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8808DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICROFOOT Original PDF

    SI8808DB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si88

    Abstract: SI8808DB-T2-E1 si8808
    Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)


    Original     		PDF Si8808DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 SI8808DB-T2-E1 si8808

    Untitled

    Abstract: No abstract text available
    Text: Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.095 at VGS = 4.5 V 2.5 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • Small 0.8 mm x 0.8 mm outline area • Low 0.4 mm max. profile


    Original     		PDF Si8808DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8808DB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8808DB S12-2921-Rev. 10-Dec-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)


    Original     		PDF Si8808DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI8808DB-T2-E1

    Abstract: No abstract text available
    Text: New Product Si8808DB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.095 at VGS = 4.5 V 2.5 0.105 at VGS = 2.5 V 2.3 0.120 at VGS = 1.8 V 2.2 0.165 at VGS = 1.5 V 1.9 • • • • • Qg (Typ.)


    Original     		PDF Si8808DB Traceabi72 S12-1766-Rev. 23-Jul-12 SI8808DB-T2-E1

    Untitled

    Abstract: No abstract text available
    Text: Si8808DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8808DB AN609, 3494u 2947u 8691u 3739m 9059m 9927m 6659m 10-Aug-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402