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    S0915 Search Results

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    MEC Switches A/S 1SS09-15.0

    CAP SOLID COLOR BLACK 15MM
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    DigiKey 1SS09-15.0 Bulk 27,902 1
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    Newark 1SS09-15.0 Bulk 1 10
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    Adam Technologies Inc GS-09-15

    GROMMET SET FOR 9 AND 15POS D-SU
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    DigiKey GS-09-15 Bulk 245 1
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    Crystek Corporation CBPFS-0915

    FILTER SAW 915MHZ INLINE
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    DigiKey CBPFS-0915 Bulk 209 1
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    Mouser Electronics CBPFS-0915 27
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    DComponents AM1SS-0915SEZ

    DC/DC Converter 15V 1W
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    DigiKey AM1SS-0915SEZ Tube 84 1
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    DComponents AM1SS-0915SH30EZ

    DC/DC Converter 15V 1W
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    DigiKey AM1SS-0915SH30EZ Tube 84 1
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    S0915 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si8461DB 2002/95/EC Si8461DB-T2-E1 11-Mar-11 PDF

    SUD25N15-52

    Abstract: SUD25N15-52-E3
    Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized


    Original     		SUD25N15-52 2002/95/EC O-252 SUD25N15-52-E3 11-Mar-11 SUD25N15-52 SUD25N15-52-E3 PDF

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR164DP 18-Jul-08 A7282 65060 spice model 740 PDF

    SI4823DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4823DY 18-Jul-08 PDF

    si4154

    Abstract: SI415
    Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4154DY 18-Jul-08 si4154 SI415 PDF

    Si5402DC

    Abstract: No abstract text available
    Text: Si5402DC Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 6.7 0.055 at VGS = 4.5 V ± 5.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 18-Jul-08 PDF

    AN811

    Abstract: S0915
    Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 AN811 S0915 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 11-Mar-11 PDF

    Si5475DC

    Abstract: No abstract text available
    Text: Si5475DC Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 7.6 - 12 0.041 at VGS = - 2.5 V - 6.6 0.054 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		Si5475DC 2002/95/EC Si5475DC-T1-E3 Si5475DC-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 25 0.060 at VGS = 6 V 23 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized


    Original     		SUD25N15-52 2002/95/EC O-252 SUD25N15-52-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5


    Original     		SiB417EDK SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si8461DB 2002/95/EC Si8461DB-T2-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5


    Original     		SiB417EDK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4186DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0026 at VGS = 10 V 35.8 0.0032 at VGS = 4.5 V 32.2 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4186DY 2002/95/EC Si4186DY-T1-GE3 11-Mar-11 PDF

    SC-75

    Abstract: No abstract text available
    Text: SiB417EDK Vishay Siliconix P-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9.0a 0.080 at VGS = - 2.5 V - 9.0a 0.100 at VGS = - 1.8 V - 4.0 0.130 at VGS = - 1.5 V - 2.0 0.250 at VGS = - 1.2 V - 0.5


    Original     		SiB417EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 PDF

    65075

    Abstract: No abstract text available
    Text: SPICE Device Model SiE882DF Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiE882DF 18-Jul-08 65075 PDF

    SC-75

    Abstract: SiB431EDK-T1-GE3 SiB431EDK
    Text: New Product SiB431EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)f, g RDS(on) (Ω) - 20 0.080 at VGS = - 4.5 V -9 0.149 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiB431EDK SC-75 2002/95/EC SC-75-6L-Single 18-Jul-08 SiB431EDK-T1-GE3 PDF

    Si7145DP

    Abstract: si7145 EFB810-3/4-3/Si7145DP
    Text: SPICE Device Model Si7145DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7145DP 18-Jul-08 si7145 EFB810-3/4-3/Si7145DP PDF

    D 1556

    Abstract: SiR416DP
    Text: SPICE Device Model SiR416DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR416DP 18-Jul-08 D 1556 PDF

    SiB431EDK

    Abstract: No abstract text available
    Text: New Product SiB431EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)f, g RDS(on) (Ω) - 20 0.080 at VGS = - 4.5 V -9 0.149 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiB431EDK SC-75 2002/95/EC SC-75-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS438DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		Si8461DB 2002/95/EC Si8461DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4186DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0026 at VGS = 10 V 35.8 0.0032 at VGS = 4.5 V 32.2 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4186DY 2002/95/EC Si4186DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF