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    SI415 Search Results

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    SI415 Price and Stock

    Vishay Siliconix SI4154DY-T1-GE3

    MOSFET N-CH 40V 36A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4154DY-T1-GE3 Digi-Reel 12,007 1
    • 1 $1.64
    • 10 $1.11
    • 100 $1.64
    • 1000 $0.58845
    • 10000 $0.58845
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    SI4154DY-T1-GE3 Cut Tape 12,007 1
    • 1 $1.64
    • 10 $1.11
    • 100 $1.64
    • 1000 $0.58845
    • 10000 $0.58845
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    SI4154DY-T1-GE3 Reel 10,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.5375
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    RS SI4154DY-T1-GE3 Bulk 2,500
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    • 10000 $1.39
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    ES Components SI4154DY-T1-GE3
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    Vishay Siliconix SI4156DY-T1-GE3

    MOSFET N-CH 30V 24A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4156DY-T1-GE3 Digi-Reel 5,756 1
    • 1 $1.15
    • 10 $0.773
    • 100 $1.15
    • 1000 $0.39632
    • 10000 $0.39632
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    SI4156DY-T1-GE3 Cut Tape 5,756 1
    • 1 $1.15
    • 10 $0.773
    • 100 $1.15
    • 1000 $0.39632
    • 10000 $0.39632
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    SI4156DY-T1-GE3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3375
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    Vishay Siliconix SI4151DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4151DY-T1-GE3 Cut Tape 3,525 1
    • 1 $1.43
    • 10 $0.962
    • 100 $1.43
    • 1000 $0.50353
    • 10000 $0.50353
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    SI4151DY-T1-GE3 Digi-Reel 3,525 1
    • 1 $1.43
    • 10 $0.962
    • 100 $1.43
    • 1000 $0.50353
    • 10000 $0.50353
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    SI4151DY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.44775
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    Vishay Siliconix SI4155DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4155DY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28242
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    SI4155DY-T1-GE3 Cut Tape 64 1
    • 1 $0.94
    • 10 $0.628
    • 100 $0.628
    • 1000 $0.628
    • 10000 $0.628
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    Vishay Siliconix SI4153DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4153DY-T1-GE3 Cut Tape 1,723 1
    • 1 $0.85
    • 10 $0.568
    • 100 $0.85
    • 1000 $0.28381
    • 10000 $0.28381
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    SI4153DY-T1-GE3 Digi-Reel 1,723 1
    • 1 $0.85
    • 10 $0.568
    • 100 $0.85
    • 1000 $0.28381
    • 10000 $0.28381
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    Find more SI415 price and stock on Findchips.com

    SI415 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI-415-1 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SI-415-C1002 SLOT ISOLATOR GROMM Original PDF
    SI4154DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 36A 8-SOIC Original PDF
    SI4156DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 24A 8-SOIC Original PDF
    SI4158DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 36.5A 8-SOIC Original PDF
    SI-415-C6050 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SI-415-C6050 SLOT ISOLATOR GROMM Original PDF
    SI-415-C8002 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SI-415-C8002 SLOT ISOLATOR GROMM Original PDF
    SI-415-C8012 Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SI-415-C8012 SLOT ISOLATOR GROMM Original PDF

    SI415 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si4154

    Abstract: SI415
    Text: SPICE Device Model Si4154DY Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4154DY 18-Jul-08 si4154 SI415

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si4158DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4156DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4156DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω)


    Original     		PDF Si4156DY 2002/95/EC Si4156DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    transistor 9751

    Abstract: AN609 75161n
    Text: Si4154DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4154DY AN609, 02-Jun-09 transistor 9751 AN609 75161n

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4154DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 36 0.0039 at VGS = 4.5 V 33 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4154DY 2002/95/EC SI4154DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω)


    Original     		PDF Si4156DY 2002/95/EC Si4156DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C 5763 transistor

    Abstract: c 5763 5763 AN609
    Text: Si4158DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si4158DY AN609, 02-Dec-08 C 5763 transistor c 5763 5763 AN609

    258B DIODE

    Abstract: si4158
    Text: New Product Si4158DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0025 at VGS = 10 V 36.5 0.003 at VGS = 4.5 V 33.3 VDS (V) 20 • • • • Qg (Typ.) 40 nC Halogen-free TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4158DY Si4158DY-T1-GE3 18-Jul-08 258B DIODE si4158

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4154DY www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4154DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    inductor 2r2

    Abstract: No abstract text available
    Text: SMT Power Inductor SI415 & SI418Type Features RoHS compliant. Low profile, SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converter,DC-AC inverters


    Original     		PDF SI415 SI418Type 100KHz, SI415 SI418 -20oC 105oC inductor 2r2

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4156DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4156DY 18-Jul-08

    SI4154DY-T1-GE3

    Abstract: W1032 si4154 Si4154DY
    Text: New Product Si4154DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 36 0.0039 at VGS = 4.5 V 33 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4154DY 2002/95/EC SI4154DY-T1-GE3 18-Jul-08 SI4154DY-T1-GE3 W1032 si4154

    AN609

    Abstract: No abstract text available
    Text: Si4156DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4156DY AN609, 09-Apr-09 AN609

    SI415

    Abstract: S0912 SI4156
    Text: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω)


    Original     		PDF Si4156DY 2002/95/EC Si4156DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI415 S0912 SI4156

    Si4156DY

    Abstract: si4156
    Text: Si4156DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY RDS(on) (Ω)


    Original     		PDF Si4156DY 2002/95/EC Si4156DY-T1-GE3 18-Jul-08 si4156

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    SI415

    Abstract: No abstract text available
    Text: SMT Power Inductor SI415 & 418 Type Features • ■ ■ ■ ■ ■ Low profile, SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters


    OCR Scan     		PDF SI415 SI415 SI418

    SI415

    Abstract: No abstract text available
    Text: SMT Power Inductor SI41X Type Features • ■ ■ ■ ■ ■ Low profile, SMD type. Unshielded. Self-leads, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Idel for power source circuits, DC-DC converters, DC-AC inverters


    OCR Scan     		PDF SI41X 100KHz SI413 SI415