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    RL 12V 200 OHM Search Results

    RL 12V 200 OHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd

    RL 12V 200 OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4391

    Abstract: SST4391 marking 18w sot23 4392 2N4393 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01
    Text: N-Channel JFET Switch LLC 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES • rds on <300 Ohms (2N4391) • ID(OFF)<100pA • Switches ±10VAC With ±15V Supplies (4392, 4393) PIN CONFIGURATION TO - 92 TO-92 TO-18 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N4391 2N4393 PN4391 PN4393 SST4391 SST4393 2N4391) 100pA 10VAC -65oC 2N4391 SST4391 marking 18w sot23 4392 jfet transistor 2n4391 sot-23 18w 4391 jfet marking N03 TO92 SOT23 MARKING N01

    1E14

    Abstract: 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R FSL923A0R1 Rad Hard in Fairchild for MOSFET
    Text: FSL923A0D, FSL923A0R Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL923A0D, FSL923A0R -200V, O-205AF 254mm) FSL923A0R 1E14 2E12 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A0R1 Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    1E14

    Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
    Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSYA250D, FSYA250R 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7404 FSF9250R4 -200V,

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7400 FSS230R4

    388E-3

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
    Text: RF1K49211 Data Sheet 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET August 1999 File Number 4303.1 Features • 7A, 12V [ /Title The RF1K49211 Single N-Channel power MOSFET is • rDS ON = 0.020Ω (RF1K4 manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49211 RF1K49211 388E-3 AN7254 AN9321 AN9322 MS-012AA RF1K4921196 TB334

    Untitled

    Abstract: No abstract text available
    Text: FSL923A0D, FSL923A0R Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSL923A0D, FSL923A0R -200V,

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842

    1E14

    Abstract: 2E12 FSS923A0D FSS923A0D1 FSS923A0D3 FSS923A0R FSS923A0R1
    Text: FSS923A0D, FSS923A0R Data Sheet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS923A0D, FSS923A0R -200V, 1E14 2E12 FSS923A0D FSS923A0D1 FSS923A0D3 FSS923A0R FSS923A0R1

    BRX49 datasheet

    Abstract: Rad Hard in Fairchild for MOSFET FSS923A0D3 FSS923A0R FSS923A0R1 1E14 2E12 FSS923A0D FSS923A0D1
    Text: FSS923A0D, FSS923A0R Data Sheet 7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS923A0D, FSS923A0R -200V, BRX49 datasheet Rad Hard in Fairchild for MOSFET FSS923A0D3 FSS923A0R FSS923A0R1 1E14 2E12 FSS923A0D FSS923A0D1

    1E14

    Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3
    Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has


    Original     		PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL230D, FSL230R Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3
    Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSJ260D, FSJ260R 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3

    1E14

    Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3
    Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440


    Original     		PDF JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss

    1E14

    Abstract: 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3
    Text: FSL23A0D, FSL23A0R Data Sheet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    Original     		PDF FSL23A0D, FSL23A0R 1E14 2E12 FSL23A0D FSL23A0D1 FSL23A0D3 FSL23A0R FSL23A0R1 FSL23A0R3

    ic 4081 datasheet

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS9230D, FSS9230R -200V, ic 4081 datasheet 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1

    1E14

    Abstract: 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1
    Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF9250D, FSF9250R -200V, 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1

    1E14

    Abstract: 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET
    Text: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSS23A0D, FSS23A0R 1E14 2E12 FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R FSS23A0R1 FSS23A0R3 Rad Hard in Fairchild for MOSFET

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS9230D, FSS9230R -200V, Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report

    1E14

    Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET
    Text: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS230D, FSS230R 1E14 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET