FSF9250D1 Search Results

FSF9250D1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FSF9250D1		Fairchild Semiconductor	15A, -200V, 0.290 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs		Original	PDF
FSF9250D1		Intersil	15A, -200V, 0.290 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs		Original	PDF

FSF9250D1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1E14 Abstract: 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSF9250D, FSF9250R -200V, 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1
FSF9250R4 Abstract: 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Rad Hard in Fairchild for MOSFET Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSF9250D, FSF9250R -200V, FSF9250R4 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Rad Hard in Fairchild for MOSFET
Untitled Abstract: No abstract text available Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	FSF9250D, FSF9250R -200V,
lsd 3222 -20 Abstract: No abstract text available Text: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 15A, -200V, rDS 0 N = 0.290£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSF9250D, FSF9250R -200V, -254AA MIL-S-19500 lsd 3222 -20
Untitled Abstract: No abstract text available Text: FSF9250D, FSF9250R HARRIS S E M I C O N D U C T O R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs J u n e 1998 Features Description • 15A, -200V, rDS ON = 0.290£J T h e D iscre te P ro d u c ts O p e ra tio n o f H arris S e m ic o n d u c to r	OCR Scan	PDF	FSF9250D, FSF9250R -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;