1E14
Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3
Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ260D,
FSJ260R
1E14
2E12
FSJ260D
FSJ260D1
FSJ260D3
FSJ260R
FSJ260R1
FSJ260R3
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PDF
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FSJ260
Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
Text: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ260D,
FSJ260R
1-800-4-HARRIS
FSJ260
MIL-S-19500
1E14
2E12
FSJ260D
FSJ260D1
FSJ260D3
FSJ260R
FSJ260R1
ta1766
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PDF
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1E14
Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1
Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 44A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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Original
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FSJ260D,
FSJ260R
36MeV/mg/cm2
MIL-PRF-19500,
MIL-PRF-19500.
1E14
2E12
FSJ260D
FSJ260D1
FSJ260D3
FSJ260R
FSJ260R1
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PDF
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1E14
Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET
Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 0D, FSJ26 0R /Subjec t (44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (44A, 200V, 0.050
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Original
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FSJ260D,
FSJ260R
FSJ26
1E14
2E12
FSJ260D
FSJ260D1
FSJ260D3
FSJ260R
Rad Hard in Fairchild for MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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Original
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FSJ260D,
FSJ260R
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R TM Data Sheet December 2001 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number Features • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs
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Original
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FSJ260D,
FSJ260R
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs
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OCR Scan
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FSJ260D,
FSJ260R
MIL-S-19500
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Description • 44A, 200V, ros O N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSJ260D,
FSJ260R
1-800-4-HARRIS
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ260D, FSJ260R 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rDS 0N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for comm ercial and m ilitary space
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OCR Scan
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FSJ260D,
FSJ260R
36MeV/mg/cm2
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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