Untitled
Abstract: No abstract text available
Text: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7406
1-800-4-HARRIS
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1E14
Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has
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JANSR2N7406
FSF250R4
1E14
2E12
FSF250R4
JANSR2N7406
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7406
FSF250R4
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1E14
Abstract: 2E12 FSF250R4 JANSR2N7406
Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7406
FSF250R4
1E14
2E12
FSF250R4
JANSR2N7406
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ic 4046
Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF250D,
FSF250R
ic 4046
FSF250R1
FSF250R3
1E14
2E12
FSF250D
FSF250D1
FSF250D3
FSF250R
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1E14
Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF250D,
FSF250R
1E14
2E12
FSF250D
FSF250D1
FSF250D3
FSF250R
FSF250R1
FSF250R3
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Untitled
Abstract: No abstract text available
Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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FSF250D,
FSF250R
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Rad hard MOSFETS in Harris
Abstract: No abstract text available
Text: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSF250R4
JANSR2N7406
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
Rad hard MOSFETS in Harris
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Untitled
Abstract: No abstract text available
Text: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSF250D,
FSF250R
MIL-STD-750,
MIL-S-19500,
100ms,
500ms,
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Untitled
Abstract: No abstract text available
Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF250D,
FSF250R
MIL-S-19500
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7404
Abstract: No abstract text available
Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F
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JANSR2N7272
JANSR2N7275
FRL130R4
FRL230R4
FRL234R4
FRF150R
FRF250R4
FSL130R4
FSL230R4
FSL234R4
7404
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