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    FSS9230D3 Search Results

    FSS9230D3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSS9230D3 Intersil 4A, -200V, 1.60 ?, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Original PDF

    FSS9230D3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 4081 datasheet

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS9230D, FSS9230R -200V, ic 4081 datasheet 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS9230D, FSS9230R -200V, Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report

    1E14

    Abstract: 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSS9230D, FSS9230R -200V, 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1

    Untitled

    Abstract: No abstract text available
    Text: FSS9230D, FSS9230R HARRIS S E M I C O N D U C T O R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Description Features • 4A, -200V, rDs ON = 1.60£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSS9230D, FSS9230R -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms;

    data sw 3205

    Abstract: No abstract text available
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS9230D, FSS9230R -200V, -257AA MIL-S-19500 data sw 3205