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    RJK0389DPA Search Results

    RJK0389DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0389DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
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    RJK0389DPA Price and Stock

    Rochester Electronics LLC RJK0389DPA-WS#J53

    POWER TRANSISTOR, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJK0389DPA-WS#J53 Bulk 115
    • 1 -
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    • 1000 $2.62
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    Renesas Electronics Corporation RJK0389DPA-WS#J53

    Power Field-Effect Transistor, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RJK0389DPA-WS#J53 2,191 1
    • 1 $2.65
    • 10 $2.65
    • 100 $2.49
    • 1000 $2.25
    • 10000 $2.25
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    RJK0389DPA Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJK0389DPA Renesas Technology MOSFET, Switching; VDSS (V): 30/ 30; ID (A): 15/20; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0082/0.0068; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0118/0.0105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 880/ 1000; toff ( us) typ: -; Package: WPAK Original PDF
    RJK0389DPA Renesas Technology Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Original PDF
    RJK0389DPA-00#J53 Renesas Electronics FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V 20A WPAK Original PDF
    RJK0389DPA-00-J0 Renesas Technology Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Original PDF

    RJK0389DPA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline


    Original     		PDF RJK0389DPA REJ03G1722-0300 PWSN0008DD-A

    PWSN0008DD-A

    Abstract: RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53
    Text: Preliminary RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0400 High Speed Power Switching Rev.4.00 Sep 29, 2009 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free


    Original     		PDF RJK0389DPA REJ03G1722-0400 PWSN0008DD-A PWSN0008DD-A RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53

    RJK0389DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free


    Original     		PDF RJK0389DPA REJ03G1722-0410 PWSN0008DD-A current9044 RJK0389DPA

    PWSN0008DD-A

    Abstract: RJK0389DPA RJK0389DPA-00-J0 MOS2
    Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0102 Preliminary Rev.1.02 Jul 25, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free


    Original     		PDF RJK0389DPA REJ03G1722-0102 PWSN0008DD-A RJK0389DPA RJK0389DPA-00-J0 MOS2

    Untitled

    Abstract: No abstract text available
    Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0101 Preliminary Rev.1.01 Jul 10, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free


    Original     		PDF RJK0389DPA REJ03G1722-0101

    MOS2

    Abstract: PWSN0008DD-A RJK0389DPA RJK0389DPA00J53
    Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free


    Original     		PDF RJK0389DPA REJ03G1722-0410 PWSN0008DD-A MOS2 PWSN0008DD-A RJK0389DPA RJK0389DPA00J53

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		PDF R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606

    HAT1128R

    Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
    Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response


    Original     		PDF RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		PDF R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		PDF REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Text: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


    Original     		PDF RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114