RJK0389DPA00J53 Search Results

RJK0389DPA00J53 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0389DPA-00#J53		Renesas Electronics Corporation	N Channel Power MOSFET

RJK0389DPA00J53 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline	Original	PDF	RJK0389DPA REJ03G1722-0300 PWSN0008DD-A
PWSN0008DD-A Abstract: RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53 Text: Preliminary RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0400 High Speed Power Switching Rev.4.00 Sep 29, 2009 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free	Original	PDF	RJK0389DPA REJ03G1722-0400 PWSN0008DD-A PWSN0008DD-A RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53
RJK0389DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free	Original	PDF	RJK0389DPA REJ03G1722-0410 PWSN0008DD-A current9044 RJK0389DPA
MOS2 Abstract: PWSN0008DD-A RJK0389DPA RJK0389DPA00J53 Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free	Original	PDF	RJK0389DPA REJ03G1722-0410 PWSN0008DD-A MOS2 PWSN0008DD-A RJK0389DPA RJK0389DPA00J53