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    RHRP3060 Price and Stock

    Diotec Semiconductor AG RHRP3060G

    DIODE GEN PURP 600V 30A TO220AC
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    DigiKey RHRP3060G Bulk 963 1
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    Mouser Electronics RHRP3060G 849
    • 1 $4.04
    • 10 $3.16
    • 100 $1.89
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    Verical RHRP3060G 1,451 47
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    Onlinecomponents.com RHRP3060G
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    TME RHRP3060G 1,451 1
    • 1 $1.59
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    onsemi RHRP3060

    DIODE GEN PURP 600V 30A TO220-2L
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    onsemi RHRP3060-F102

    DIODE GEN PURP 600V 30A TO220-2
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    Harris Semiconductor RHRP3060

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    Quest Components RHRP3060 4
    • 1 $12.51
    • 10 $9.174
    • 100 $9.174
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    Fairchild Semiconductor Corporation RHRP3060

    Rectifier Diode, 600 Volt, TO-220AC
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    Quest Components RHRP3060 32
    • 1 $2.5524
    • 10 $1.9143
    • 100 $1.5953
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    RHRP3060 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RHRP3060 Fairchild Semiconductor 30A, 600V HyperFast Diode Original PDF
    RHRP3060 Fairchild Semiconductor 30 A, 600 V Hyperfast Diode Original PDF
    RHRP3060 Fairchild Semiconductor 30A, 600V Hyperfast Diodes Original PDF
    RHRP3060 Fairchild Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 30A TO220AC Original PDF
    RHRP3060 Harris Semiconductor Hyperfast Recovery Rectifier Original PDF
    RHRP3060 Intersil 30A, 400V - 600V Hyperfast Diodes Original PDF
    RHRP3060 Intersil 30A, 400V - 600 V Hyperfast Diodes Scan PDF
    RHRP3060 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RHRP3060-F102 ON Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 30A TO220-2 Original PDF
    RHRP3060_NL Fairchild Semiconductor 30A, 600V HyperFast Diode Original PDF

    RHRP3060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RHRP3060 RHRP3060

    RHRP3060

    Abstract: TA49063 RHRP3040 RHRP3050
    Text: RHRP3040, RHRP3050, RHRP3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC TO-220AC • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC


    Original     		PDF RHRP3040, RHRP3050, RHRP3060 O-220AC 175oC RHRP3050 TA49063) RHRP3060 TA49063 RHRP3040

    Untitled

    Abstract: No abstract text available
    Text: RHRP3060 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time40n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)30


    Original     		PDF RHRP3060 Current30 Voltage600 Time40n Current250u StyleTO-220AC

    Untitled

    Abstract: No abstract text available
    Text: RHRP3060 30 A, 600 V Hyperfast Diodes Features Description • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted


    Original     		PDF RHRP3060 RHRP3060

    TA49063

    Abstract: RHRP3060
    Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RHRP3060 RHRP3060 TA49063

    RHRP3040

    Abstract: RHRP3060 TA49063
    Text: RHRP3040, RHRP3060 Data Sheet Title HR 040, HRP 60 bt A, 0V 0V pert odes utho eyrds A, 0V 0V pert odes terrpoon, pert odes vache ergy ted, itch January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with


    Original     		PDF RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063

    hyperfast

    Abstract: 600v 30a IGBT
    Text: RHRP3060 tm Features 30 A, 600 V, Hyperfast Diode • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar


    Original     		PDF RHRP3060 RHRP3060 hyperfast 600v 30a IGBT

    RHRP3040

    Abstract: RHRP3060 TA49063
    Text: RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride


    Original     		PDF RHRP3040, RHRP3060 RHRP3040 RHRP3060 175oC TA49063

    RHRP3040

    Abstract: RHRP3060 TA49063
    Text: RHRP3040, RHRP3060 Data Sheet January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride


    Original     		PDF RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		PDF HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent

    G40N60B3

    Abstract: No abstract text available
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678

    G40N60

    Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
    Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389

    HG20N60B3

    Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n
    Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state


    Original     		PDF HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n

    g30n60c3d

    Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
    Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60

    RHRG3040

    Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040
    Text: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090


    Original     		PDF RHRD6120 RHRD6120S RHRP8120 RHRP15120 RHRP15100 RHRP1590 RHRP1580 RHRP1570 RHRP1560 RHRP1550 RHRG3040 RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040

    No 42 G30N60C3D

    Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
    Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss


    Original     		PDF HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RHRP3040, RHRP3050, RHRP3060 Semiconductor April 1995 These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft


    OCR Scan     		PDF RHRP3040, RHRP3050, RHRP3060 RHRP3050 TA49063)

    Hyperfast Diode 120A

    Abstract: RHRP3040 RHRP3060 TA49063
    Text: RHRP3040, RHRP3060 in t e r r ii Data Sheet J a n u a ry . w in File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride


    OCR Scan     		PDF RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063. Hyperfast Diode 120A TA49063

    relay 12v 1c/o

    Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
    Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178

    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Text: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		PDF HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n