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Diotec Semiconductor AG RHRP3060G DIODE GEN PURP 600V 30A TO220AC
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DigiKey	RHRP3060G	Bulk	593		1	1 $3.11 10 $2.023 100 $1.4203 1000 $1.0912 10000 $0.95584	Buy Now
Mouser Electronics	RHRP3060G		707			1 $3.11 10 $1.57 100 $1.26 1000 $1.09 10000 $0.955	Buy Now
Onlinecomponents.com	RHRP3060G					1 - 10 - 100 - 1000 $0.911 10000 $0.911	Buy Now
TME	RHRP3060G		758		1	1 $1.53 10 $1.38 100 $1.09 1000 $1.03 10000 $1.03	Buy Now
onsemi RHRP3060 DIODE GEN PURP 600V 30A TO220-2L
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DigiKey	RHRP3060	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	RHRP3060	Bulk			800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi RHRP3060-F102 DIODE GEN PURP 600V 30A TO220-2
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DigiKey	RHRP3060-F102	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Harris Semiconductor RHRP3060
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Bristol Electronics	RHRP3060		6			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	RHRP3060		4			1 $12.51 10 $9.174 100 $9.174 1000 $9.174 10000 $9.174	Buy Now
Fairchild Semiconductor Corporation RHRP3060 RECTIFIER DIODE,600V V(RRM),TO-220AC
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Quest Components	RHRP3060		32			1 $2.5524 10 $1.9143 100 $1.5953 1000 $1.5953 10000 $1.5953	Buy Now
ComSIT USA	RHRP3060		188			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	RHRP3060		42,000			1 - 10 - 100 $1.2283 1000 $0.998 10000 $0.998	Buy Now

RHRP3060 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
RHRP3060	Fairchild Semiconductor	30A, 600V HyperFast Diode	Original	PDF
RHRP3060	Fairchild Semiconductor	30 A, 600 V Hyperfast Diode	Original	PDF
RHRP3060	Fairchild Semiconductor	30A, 600V Hyperfast Diodes	Original	PDF
RHRP3060	Fairchild Semiconductor	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 30A TO220AC	Original	PDF
RHRP3060	Harris Semiconductor	Hyperfast Recovery Rectifier	Original	PDF
RHRP3060	Intersil	30A, 400V - 600V Hyperfast Diodes	Original	PDF
RHRP3060	Intersil	30A, 400V - 600 V Hyperfast Diodes	Scan	PDF
RHRP3060	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
RHRP3060-F102	ON Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 600V 30A TO220-2	Original	PDF
RHRP3060_NL	Fairchild Semiconductor	30A, 600V HyperFast Diode	Original	PDF

RHRP3060 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.	Original	RHRP3060 RHRP3060	PDF
RHRP3060 Abstract: TA49063 RHRP3040 RHRP3050 Text: RHRP3040, RHRP3050, RHRP3060 S E M I C O N D U C T O R 30A, 400V - 600V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <40ns JEDEC TO-220AC • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC	Original	RHRP3040, RHRP3050, RHRP3060 O-220AC 175oC RHRP3050 TA49063) RHRP3060 TA49063 RHRP3040	PDF
Untitled Abstract: No abstract text available Text: RHRP3060 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time40n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)30	Original	RHRP3060 Current30 Voltage600 Time40n Current250u StyleTO-220AC	PDF
Untitled Abstract: No abstract text available Text: RHRP3060 30 A, 600 V Hyperfast Diodes Features Description • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted	Original	RHRP3060 RHRP3060	PDF
TA49063 Abstract: RHRP3060 Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.	Original	RHRP3060 RHRP3060 TA49063	PDF
RHRP3040 Abstract: RHRP3060 TA49063 Text: RHRP3040, RHRP3060 Data Sheet Title HR 040, HRP 60 bt A, 0V 0V pert odes utho eyrds A, 0V 0V pert odes terrpoon, pert odes vache ergy ted, itch January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with	Original	RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063	PDF
hyperfast Abstract: 600v 30a IGBT Text: RHRP3060 tm Features 30 A, 600 V, Hyperfast Diode • Hyperfast Recovery trr = 45 ns @ IF = 30 A The RHRP3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar	Original	RHRP3060 RHRP3060 hyperfast 600v 30a IGBT	PDF
RHRP3040 Abstract: RHRP3060 TA49063 Text: RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride	Original	RHRP3040, RHRP3060 RHRP3040 RHRP3060 175oC TA49063	PDF
RHRP3040 Abstract: RHRP3060 TA49063 Text: RHRP3040, RHRP3060 Data Sheet January 2000 File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride	Original	RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063	PDF
G40N60 Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3 Text: HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction	Original	HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3	PDF
HG20N60B3 Abstract: hG20N60 hg20n60b3 equivalent Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent	PDF
G40N60B3 Abstract: No abstract text available Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3	PDF
G40N60 Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar	Original	HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678	PDF
G40N60 Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389 Text: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389	PDF

HG20N60B3 Abstract: Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 HGTG20N60B3 LD26 RHRP3060 TB334 hg20n Text: HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state	Original	HGTG20N60B3 HGTG20N60B3 150oC. TB334lopment. HG20N60B3 Series 475 Rev-B3 hG20N60 hg20n60b3 equivalent 475 Rev-B3 LD26 RHRP3060 TB334 hg20n	PDF
g30n60c3d Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060 Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input	Original	HGTG30N60C3D HGTG30N60C3D 150oC. TA49051. TA49053. 230ns 150oC g30n60c3d G30N60 TA49053 TA49051 LD26 RHRP3060	PDF
G20N60B3D Abstract: G20N60B hg*20n60 Hgtg20n60 Text: HGTG20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and	Original	HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60	PDF
RHRG3040 Abstract: RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040 Text: 8A RHRD6120 RHRD6120S 3.2V 65ns RHRP8120 3.2V 70ns RHRP15120 3.2V 75ns RHRP15100 3.0V 70ns RHRP1590 3.0V 70ns RHRP1580 3.0V 70ns RHRP1570 3.0V 70ns RHRP1560 2.1V 40ns RHRP1550 2.1V 40ns RHRP1540 2.1V 40ns 15A RHRP30120 3.2V 75ns RHRP30100 3.0V 75ns RHRP3090	Original	RHRD6120 RHRD6120S RHRP8120 RHRP15120 RHRP15100 RHRP1590 RHRP1580 RHRP1570 RHRP1560 RHRP1550 RHRG3040 RHRU100120 RHRG30120 RHRD640S RHRG1550CC RHRD440 RHRG5040 RHRG7540 RHRP1540 RHRP3040	PDF
No 42 G30N60C3D Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss	Original	HGTG30N60C3D 230ns 150oC O-247 HGTG30N60C3D 150oC. TA49051. 1-800-4-HARRIS No 42 G30N60C3D g30n60c3d LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C	PDF
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original		PDF
Untitled Abstract: No abstract text available Text: RHRP3040, RHRP3050, RHRP3060 Semiconductor April 1995 These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft	OCR Scan	RHRP3040, RHRP3050, RHRP3060 RHRP3050 TA49063)	PDF
Hyperfast Diode 120A Abstract: RHRP3040 RHRP3060 TA49063 Text: RHRP3040, RHRP3060 in t e r r ii Data Sheet J a n u a ry . w in File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride	OCR Scan	RHRP3040, RHRP3060 RHRP3040 RHRP3060 TA49063. Hyperfast Diode 120A TA49063	PDF
relay 12v 1c/o Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3 Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	OCR Scan	TA49178. HGTG20N60C3 O-247 G20N60C3 relay 12v 1c/o 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178	PDF
G20N60B3D Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n Text: HGTG20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input	OCR Scan	HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n	PDF

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RHRP3060 Price and Stock

Diotec Semiconductor AG RHRP3060G

onsemi RHRP3060

onsemi RHRP3060-F102

Harris Semiconductor RHRP3060

Fairchild Semiconductor Corporation RHRP3060

RHRP3060 Datasheets (10)

RHRP3060 Datasheets Context Search

Untitled

RHRP3060

Untitled

Untitled

TA49063

RHRP3040

hyperfast

RHRP3040

RHRP3040

G40N60

HG20N60B3

G40N60B3

G40N60

G40N60

HG20N60B3

g30n60c3d

G20N60B3D

RHRG3040

No 42 G30N60C3D

thermistor KSD201

Untitled

Hyperfast Diode 120A

relay 12v 1c/o

G20N60B3D