G30N60
Abstract: TA49053 TA49172 TA49170 G30N60B3 G30N60B3D HGTG30N60B3D LD26 HGTG30N60b 200pulse
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60
TA49053
TA49172
TA49170
G30N60B3
G30N60B3D
LD26
HGTG30N60b
200pulse
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g30n60c3d
Abstract: G30N60 TA49053 TA49051 HGTG30N60C3D LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
G30N60
TA49053
TA49051
LD26
RHRP3060
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No 42 G30N60C3D
Abstract: g30n60c3d HGTG30N60C3D LD26 RHRP3060 TA49051 TA49053 g30n60 G30N60C
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
TA49051.
1-800-4-HARRIS
No 42 G30N60C3D
g30n60c3d
LD26
RHRP3060
TA49051
TA49053
g30n60
G30N60C
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g30n60
Abstract: g30n60c3d RHRP3060 TA49051 TA49053 HGTG30N60C3D
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60
g30n60c3d
RHRP3060
TA49051
TA49053
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G30N60B3D
Abstract: G30N60 G30N60B3 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Text: HGTG30N60B3D Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
150oC
G30N60B3D
G30N60
G30N60B3
LD26
TA49053
TA49170
TA49172
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G30N60B3D
Abstract: HGTG30N60B3D TA49172
Text: HGTG30N60B3D Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
G30N60B3D
TA49172
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G30N60B3D
Abstract: TA49170 TA49172 HGTG30N60B3D LD26 TA49053
Text: HGTG30N60B3D Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
150oC.
TA49170.
TA49053.
150oC
G30N60B3D
TA49170
TA49172
LD26
TA49053
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TA49053
Abstract: g30n60c3d
Text: HGTG30N60C3D Data Sheet January 2009 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
TA49053
g30n60c3d
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G30N60B3D
Abstract: G30N60B3 HGT4E30N60B3DS G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Text: HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best
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HGTG30N60B3D,
HGT4E30N60B3DS
O-247
HGT4E30N60B3DS
150oC.
TA49170.
TA49053.
O-268AA
G30N60B3D
G30N60B3
G30N60
HGTG30N60B3D
LD26
TA49053
TA49170
TA49172
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g30n60c3d
Abstract: G30N60 transistor 40411 40411 transistor TA49051 TA49014 No 42 G30N60C3D TA49053 HGTG30N60C3D N-channel enhancement 200V 60A
Text: HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features • • • • • Package o 63A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC Short Circuit Rating
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HGTG30N60C3D
230ns
150oC
O-247
HGTG30N60C3D
150oC.
1-800-4-HARRIS
g30n60c3d
G30N60
transistor 40411
40411 transistor
TA49051
TA49014
No 42 G30N60C3D
TA49053
N-channel enhancement 200V 60A
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g30n60b3d
Abstract: No abstract text available
Text: HGTG30N60B3D Data Sheet April 2004 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60B3D
O-247
HGTG30N60B3D
150oC.
TA49170.
TA49053.
g30n60b3d
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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HGTG30N60C3D
Abstract: IGBTs g30n60c3d No 42 G30N60C3D TA49051 TA49053 LD26 RHRP3060
Text: HGTG30N60C3D Data Sheet December 2001 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
IGBTs
g30n60c3d
No 42 G30N60C3D
TA49051
TA49053
LD26
RHRP3060
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g30n60c3d
Abstract: TA49051 G30N60 HGTG30N60C3D 63a 216 LD26 RHRP3060 TA49053
Text: HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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HGTG30N60C3D
HGTG30N60C3D
150oC.
TA49051.
TA49053.
230ns
150oC
g30n60c3d
TA49051
G30N60
63a 216
LD26
RHRP3060
TA49053
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G30N60
Abstract: TA49053 G30N60B3D G30N60B3 TA49172 transistor C110 Transistor No C110 TA49170 LG 631 LG 631 IC
Text: in t e HGTG30N60B3D r r ii J a n u a ry . m D ata S h eet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60B3D
HGTG30N60B3D
TA49170.
TA49053.
G30N60
TA49053
G30N60B3D
G30N60B3
TA49172
transistor C110
Transistor No C110
TA49170
LG 631
LG 631 IC
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g30n60c3d
Abstract: G30N60 TA49014 TA49051 G30N60C TA49053 ic lg 631 LG 631 C110 HGTG30N60C3D
Text: in t e HGTG30N60C3D r r ii J a n u a ry . m D ata S h eet 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input
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OCR Scan
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HGTG30N60C3D
HGTG30N60C3D
TA49051.
TA49053.
TA49014.
g30n60c3d
G30N60
TA49014
TA49051
G30N60C
TA49053
ic lg 631
LG 631
C110
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