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    G40N60B3

    Abstract: No abstract text available
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Text: HGTG40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678

    HGTG40N60B3 equivalent

    Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
    Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
    Text: HGTG40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060

    G40N60

    Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
    Text: HGTG40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt TA49052 HGTG40N60B3 LD26 RHRP3060 45UH
    Text: HGTG40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating


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    PDF HGTG40N60B3 O-247 160ns 150oC HGTG40N60B3 150oC. G40N60 g40n60b3 g40n60b g40n60b3 igbt TA49052 LD26 RHRP3060 45UH

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    g40n60b3d

    Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
    Text: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


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    PDF HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063

    G40N60B3

    Abstract: G40N60
    Text: HGTG40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


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    PDF HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60

    G40N60

    Abstract: g40n60b3 igbt G40N60b3 HGTG40N60B3 LD26 RHRP3060 TA49052
    Text: HGTG40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT April 1997 Features Description • 70A, 600V, TC = 25oC The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original
    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC 1-800-4-HARRIS G40N60 g40n60b3 igbt G40N60b3 LD26 RHRP3060 TA49052

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
    Text: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original
    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b

    G40N60

    Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
    Text: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original
    PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
    Text: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    OCR Scan
    PDF HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052

    40n60b3

    Abstract: TA49052 g40n60b transistor TE 901 equivalent se 823 HGTG40N60B3 equivalent
    Text: U U HGTG40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package • 70A, 600V at T c = +25°C JEDEC STYLE TO-247 • Square Switching SOA Capability • Typical Fall Time - 160ns at +150°C • Short Circuit Rating


    OCR Scan
    PDF HGTG40N60B3 O-247 160ns HGTG40N60B3 40n60b3 TA49052 g40n60b transistor TE 901 equivalent se 823 HGTG40N60B3 equivalent