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    RFD3055 Price and Stock

    onsemi RFD3055LESM9A

    MOSFET N-CH 60V 11A TO252AA
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    DigiKey RFD3055LESM9A Digi-Reel 37,900 1
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    RFD3055LESM9A Cut Tape 37,900 1
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    Avnet Americas RFD3055LESM9A Reel 4 Weeks 1,244
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    RFD3055LESM9A Reel 16 Weeks 2,500
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    Mouser Electronics RFD3055LESM9A 127,437
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    Newark RFD3055LESM9A Cut Tape 2,182 1
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    RFD3055LESM9A Reel 2,500
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    RS RFD3055LESM9A Bulk 2 Weeks 10
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    Onlinecomponents.com RFD3055LESM9A 5,000
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    TME RFD3055LESM9A 611 1
    • 1 $1.237
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    Richardson RFPD RFD3055LESM9A 2,500
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    Avnet Asia RFD3055LESM9A 16 Weeks 2,500
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    Avnet Silica RFD3055LESM9A 27,500 17 Weeks 2,500
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    Chip1Stop RFD3055LESM9A 2,500
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    RFD3055LESM9A Cut Tape 1,775
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    EBV Elektronik RFD3055LESM9A 18 Weeks 2,500
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    Master Electronics RFD3055LESM9A 5,000
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    New Advantage Corporation RFD3055LESM9A 10,000 1
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    onsemi RFD3055

    MOSFET N-CH 60V 12A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD3055 Tube 1,800
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    Avnet Americas RFD3055 Tube 4 Weeks 1,886
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    Rochester Electronics LLC RFD3055

    MOSFET N-CH 60V 12A IPAK
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    DigiKey RFD3055 Tube 1,567
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    onsemi RFD3055LE

    MOSFET N-CH 60V 11A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD3055LE Tube 1,800
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    Newark RFD3055LE Bulk 1 1
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    RFD3055LE Bulk 75
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    RFD3055LE Bulk 1
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    Onlinecomponents.com RFD3055LE
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    • 100 $0.6567
    • 1000 $0.5848
    • 10000 $0.4743
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    onsemi RFD3055SM

    MOSFET N-CH 60V 12A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RFD3055SM Tube
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    Find more RFD3055 price and stock on Findchips.com

    RFD3055 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD3055 Fairchild Semiconductor 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFD3055 Harris Semiconductor 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Original PDF
    RFD3055 Intersil 12A, 60V, 0.150 ?, N-Channel Power MOSFETs Original PDF
    RFD3055 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD3055LE Fairchild Semiconductor 11A, 60V, 0.107 ?, Logic Level, N-Channel Power Original PDF
    RFD3055LE Harris Semiconductor 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD3055LE Intersil 11A, 60V, 0.107 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD3055LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD3055LE_NL Fairchild Semiconductor 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD3055LESM Fairchild Semiconductor 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD3055LESM Harris Semiconductor 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD3055LESM Intersil 11A, 60V, 0.107 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD3055LESM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD3055LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD3055LESM9A Fairchild Semiconductor 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD3055LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RFD3055LESM_NL Fairchild Semiconductor 11A, 60V, 0.107 OHm, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD3055_NL Fairchild Semiconductor 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Original PDF
    RFD3055RLE Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD3055RLE Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFD3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FD3055

    Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. 175oC TB334 FD3055 Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    FD3055

    Abstract: fp3055 TA49082 IS433 RFD3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. TB334 RFD3055SM RFD3055SM9A136 RFD3055SM9A O-252 FD3055 fp3055 TA49082 IS433 RFD3055

    FD3055

    Abstract: Fp3055
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet Title FD3 5, D30 SM, P30 bt A, V, 50 m, anwer OSTs utho eyrds terrpoon, July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF RFD3055, RFD3055SM, RFP3055 FD3055 Fp3055

    f3055l

    Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. f3055l FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A

    f3055l

    Abstract: No abstract text available
    Text: RFD3055LE, RFD3055LESM Data Sheet N-Channel Logic Level Power MOSFET 60V, 11A, 107 mΩ These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization


    Original     		PDF RFD3055LE, RFD3055LESM TA49158. RFD3055LESM f3055l

    FD3055

    Abstract: IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055 RFD3055SM RFP3055
    Text: RFD3055, RFD3055SM RFP3055 S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs MegaFETs February 1994 Features Packaging • 12A, 60V JEDEC TO-220AB TOP VIEW DRAIN (FLANGE) • rDS(ON) = 0.150Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD3055, RFD3055SM RFP3055 O-220AB 175oC O-251AA RFD3055SM RFP3055 1-800-4-HARRIS FD3055 IS433 FD3055 HARRIS TA49082 mosfet motor dc 48v AN7254 AN7260 RFD3055

    FD3055

    Abstract: IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. FD3055 IS433 Fp3055 RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A

    f3055l

    Abstract: FP3055LE f3055 RFP3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet Title FD3 5L, D30 LSM November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE f3055l FP3055LE f3055 RFP3055LE

    fd3055

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. fd3055

    f3055l

    Abstract: f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet November 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs • 11A, 60V Formerly developmental type TA49158. • rDS ON = 0.107Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. TB334 f3055l f3055 FP3055LE f3055l datasheet AN9322 Fp3055 RFP3055LE datasheet fp3055le N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V RFD3055LE

    f3055l

    Abstract: FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE RFP3055LE
    Text: LOGIC LEVEL POWER MOSFET DATA SHEETS RFD3055LE, RFD3055LESM, RFP3055LE S E M I C O N D U C T O R 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 12A, 60V SOURCE DRAIN


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE O-220AB O-251AA RFP3055LE 1e-30 06e-3 f3055l FP3055LE f3055 Fp3055 RFD3055LESM9A RFP3055 RFD3055LESM AN7254 RFD3055LE

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334

    593D

    Abstract: HIP6028 HIP6028CB HIP6028EVAL1 ATI 2313 AN9833
    Text: HIP6028 Data Sheet May 1998 Advanced PWM and Dual Linear Power Control with Integrated ACPI Support Interface The HIP6028 provides the power control and protection for three output voltages in high-performance microprocessor and computer applications. The IC integrates a PWM


    Original     		PDF HIP6028 HIP6028 593D HIP6028CB HIP6028EVAL1 ATI 2313 AN9833

    Untitled

    Abstract: No abstract text available
    Text: RT9238 Preliminary VRM8.5 PWM and Triple Linear Power System Controller General Description Features The RT9238 is a 4-in-one power controller optimized for high-performance microprocessor and computer applications. The IC integrates a PWM controller, triple


    Original     		PDF RT9238 RT9238 28-pin DS9238-04

    Untitled

    Abstract: No abstract text available
    Text: RT9238 Preliminary VRM8.5 PWM and Triple Linear Power System Controller General Description Features The RT9238 is a 4-in-one power controller optimized for high-performance microprocessor and computer applications. The IC integrates a PWM controller, triple


    Original     		PDF RT9238 RT9238 28-pin DS9238-03

    Untitled

    Abstract: No abstract text available
    Text: RT9228 Advanced PWM and Dual Fixed Linear Power Controller General Description Features The RT9228 is a 3-in-one power controller optimized for high-performance microprocessor and computer applications. The IC integrates a synchronous buck PWM controller, a linear regulator, and a linear controller as well


    Original     		PDF RT9228 RT9228 24-pin 24-Lead DS9228-05

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    f3055l

    Abstract: FP3055LE
    Text: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE 150i2 1e-30 06e-3 22e-7) 48e-3 77e-5) 55e-3 f3055l FP3055LE

    f3055l

    Abstract: FP3055LE u603 RFP3055LE TA49158
    Text: RFD3055LE, RFD3055LESM, RFP3055LE inter«! D a ta S h e e t N o vem b er 1999 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs F ile N u m b e r 4 0 4 4 .3 Features • 11 A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, RFP3055LE TA49158. 107C2 6-S26 AN7260. f3055l FP3055LE u603 RFP3055LE TA49158

    FD3055

    Abstract: Fp3055
    Text: interrii RFD3055, RFD3055SM, RFP3055 D a ta S h e e t 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power J u ly 1 9 9 9 F ile N u m b e r 3648.2 Features •


    OCR Scan     		PDF RFD3055, RFD3055SM, RFP3055 TA49082. AN7260. FD3055 Fp3055

    IS433

    Abstract: FD3055 RFP3055
    Text: RFD3055, RFD3055SM RFP3055 C S JHARRIS U J S E M I C O N D U C T O R 12A, 60V, Avalanche Rated, N-Channel Enhancem ent-M ode Power M OSFETs MegaFETs February 1994 Packaging Features JEDEC TO-220AB ’ VIEW • 12 A ,6 0 V • r DS{ON)= 0 .1 5 0 Q z_ uT o


    OCR Scan     		PDF RFD3055, RFD3055SM RFP3055 O-220AB O-251AA RFP3055 238e-9 1e-30 IS433 FD3055

    Untitled

    Abstract: No abstract text available
    Text: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power


    OCR Scan     		PDF RFD3055, RFD3055SM, RFP3055 150i2

    f3055l

    Abstract: 3055LE fd3055l f3055 3055L FP3055LE fd3055le
    Text: m HARRIS U S E M I C O N D U C T O R U RFD3055LE, RFD3055LESM, 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB 1 2A , 60V DS ON : 0 .1 50S2 • 2 kV ESD P ro te c te d


    OCR Scan     		PDF RFD3055LE, RFD3055LESM, O-220AB 06e-3 22e-7) 20e-5) 56e-3 f3055l 3055LE fd3055l f3055 3055L FP3055LE fd3055le