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    Rochester Electronics LLC RFP2N20

    N-CHANNEL, MOSFET
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    DigiKey RFP2N20 Bulk 1,552 503
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    Harris Semiconductor RFP2N20

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    Quest Components RFP2N20 781
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    Rochester Electronics RFP2N20 1,552 1
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    RFP2N20 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP2N20 Fairchild Semiconductor 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Original PDF
    RFP2N20 Intersil 2A, 200V, 3.500 ?, N-Channel Power MOSFET Original PDF
    RFP2N20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP2N20 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V, Scan PDF
    RFP2N20 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP2N20 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFP2N20 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP2N20 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP2N20L Fairchild Semiconductor 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFP2N20L Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP2N20L Intersil 2A, 200V, 3.500 ?, Logic Level, N-Channel Power MOSFET Original PDF
    RFP2N20L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP2N20L General Electric N-channel logic level power field-effect transistor (LL FET). 200V, 2A. Scan PDF
    RFP2N20L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP2N20L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP2N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFP2N20
    Text: RFP2N20 Data Sheet January 2002 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features • 2A, 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP2N20 TA09289. O-220AB AN7254 AN7260 RFP2N20

    Logic Level N-Channel Power MOSFET

    Abstract: AN7254 AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L Logic Level N-Channel Power MOSFET AN7254 AN7260 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20L Data Sheet Title FP2 0L bt A, 0V d 0V, 00 m, gic vel, an- July 1999 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use


    Original     		PDF RFP2N20L RFP2N20L TA09532.

    AN7254

    Abstract: AN7260 RFP2N20L TB334
    Text: RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP2N20L RFP2N20L AN7254 AN7260 TB334

    AN7254

    Abstract: AN7260 RFP2N20
    Text: RFP2N20 Data Sheet Title FP2 0 bt A, 0V, 00 m, anwer OST) utho July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP2N20 TA09289. O-220AB AN7254 AN7260 RFP2N20

    AN7254

    Abstract: AN7260 RFP2N20
    Text: RFP2N20 Data Sheet July 1999 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF RFP2N20 TA09289. O-220AB O-220AB AN7254 AN7260 RFP2N20

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


    Original     		PDF O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    Untitled

    Abstract: No abstract text available
    Text: W vys s' RFP2N18L, RFP2N20L Semiconductor 7 2A, 180V and 200V, 3.5 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 180V and 200V The RFP2N18L and RFP2N20L are N-Channel enhance­ ment mode silicon gate power field effect transistors specifi­


    OCR Scan     		PDF RFP2N18L, RFP2N20L RFP2N18L RFP2N20L AN7254 AN7260

    P2N20

    Abstract: RFP2N20
    Text: R FP2N 18 RFP2N20 33 H a r r i s N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Features Package T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rD S °n = 3-5 fi • SOA is Power-Dissipation Limited DRAIN FLANGE • Nanosecond Switching Speeds


    OCR Scan     		PDF RFP2N20 RFP2N18 RFP2N20 92CS-36090 P2N20

    1S11

    Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
    Text: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF 75Dfll RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFL1N20and RFP2N18and 1S11 RFL1N20 RFP2N18

    multiplier ttl

    Abstract: No abstract text available
    Text: RFP2N18L RFP2N20L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rDS(0N) = 3 .5 « DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFP2N18L RFP2N20L RFP2N20L 92CS-36050 multiplier ttl

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L

    Untitled

    Abstract: No abstract text available
    Text: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFP2N20 TA09289. RFP2N20 O-220AB O-220AB AN7254 AN7260

    1n20

    Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289
    Text: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFP2N18 RFP2N20 1n20 RFL1N20 TA9290 TA9289

    RFL1N20L

    Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307
    Text: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive


    OCR Scan     		PDF RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L 92CS-3374I RFL1N18L RFL1N20L RFP2N18L AT 7312 92CS-J7307

    TA09532

    Abstract: No abstract text available
    Text: interrii " RFP2N20L I D atei S h e e t J u ly 1 9 9 9 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use


    OCR Scan     		PDF RFP2N20L TA09532. AN7254 AN7260 TA09532

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684