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    RFL1N18 Search Results

    RFL1N18 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFL1N18 Intersil 1A, 180V and 200V, 3.65 ?, N-Channel Power MOSFETs Original PDF
    RFL1N18 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 180V, Scan PDF
    RFL1N18 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N18 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFL1N18 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFL1N18 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFL1N18L General Electric N-channel logic level power field-effect transistor (LL FET). 180V, 1A. Scan PDF
    RFL1N18L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFL1N18L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFL1N18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    reverse bias diode characterstics

    Abstract: rfl1n18 AN7254 AN7260 RFL1N20 TB334
    Text: RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1N18, RFL1N20 TA09289. 25VDSS AN7254 AN7260. reverse bias diode characterstics rfl1n18 AN7260 RFL1N20 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFL1N18, RFL1N20 S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1N18, RFL1N20 TA09289. TB334 75VDSS 50VDSS 25VDSS AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: 2} H a rris RFL1N18 RFL1N20 N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 F eatures P ackage T 0 -2 0 5 A F B O TT O M VIEW • 1A, 180V and 200V • rQs on = 3.65ft • S O A is Power-Dissipation Limited GATE SOURCE • Nanosecond Switching Speeds


    OCR Scan     		PDF RFL1N18 RFL1N20 AN-7260. 92CS-36090

    Untitled

    Abstract: No abstract text available
    Text: • M3DE571 005 471b 5T1 HAS RFL1N18L RFL1N20L HARRIS August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features TO-2Û5AF • 1A, 180V and 200V BOTTOM VIEW • rDS(ON) = 3.65H • Design Optimized for 5V Gate Drives GATE SOURCE


    OCR Scan     		PDF M3DE571 RFL1N18L RFL1N20L RFL1N18L RFL1N20L 92CS-373I2 92CS-36090

    Untitled

    Abstract: No abstract text available
    Text: W vys S RFL1N18, RFL1N20 S e m ico n d ucto r 7 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 180V and 200V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1N18, RFL1N20 TA09289. AN7254 AN7260.

    1S11

    Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
    Text: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF 75Dfll RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFL1N20and RFP2N18and 1S11 RFL1N20 RFP2N18

    DIODE N20

    Abstract: No abstract text available
    Text: RFL1N18, RFL1N20 HARRIS S E M I C O N D U C T O R 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1 A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1N18, RFL1N20 TA09289. AN7260. RFL1N20 DIODE N20

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L

    1n20

    Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289
    Text: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d


    OCR Scan     		PDF RFL1N18, RFL1N20, RFP2N18, RFP2N20 RFL1N18 RFP2N18 RFP2N20 1n20 RFL1N20 TA9290 TA9289

    RFL1N20L

    Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307
    Text: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive


    OCR Scan     		PDF RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L 92CS-3374I RFL1N18L RFL1N20L RFP2N18L AT 7312 92CS-J7307

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    Untitled

    Abstract: No abstract text available
    Text: R F L 1N 18 R F L 1N 2 0 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistors \ugust 1991 Features Pa cka ge T O -2 0 5 A F BO TTO M VIEW • 1A, 180V and 200V • ros on = 3.65ft • SO A is Power-Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		PDF AN-7260.

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684

    RFL1N20L

    Abstract: No abstract text available
    Text: 2 H a R F L 1 N 1 8 L r r i s R F L 1 N 2 0 L August 1991 N-Channel Logic Level Power Field-Effect Transistors L2 FET) Package Features • 1A, 180V and 200V T 0-205A F BOTTOM VIEW • rDS(0N) = 3 .6 5 0 • Design Optimized for SV Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits


    OCR Scan     		PDF RFL1N18L RFL1N20L

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40