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    RFM8N20 Search Results

    RFM8N20 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFM8N20 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 8A. Scan PDF
    RFM8N20 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM8N20 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM8N20 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM8N20 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM8N20L General Electric N-channel logic level power field-effect transistor (LL FET). 200V, 8A. Scan PDF
    RFM8N20L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM8N20L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFM8N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    TA9291

    Abstract: RFP8N20 36161 RFM8N18 RFM8N20 RFP8N18 2csm
    Text: Standard Power M O S F E T s _ RFM8N18, RFM8N20, RFP8IM18, RFP8N20 File N um ber 1447 N-Channel Enhancemient-Mode Power Field-Effect Transistors 8 A, 180 V — 200 V o rDs on : 0.5 O Features: • ■ m m m SOA is power-dissipation lim ited


    OCR Scan     		PDF RFM8N18, RFM8N20, RFP8IM18, RFP8N20 92C3-3374I RFM8N18 RFM8N20 RFP8N18 RFP8N20* TA9291 RFP8N20 36161 2csm

    IN18

    Abstract: RFM8N18 RFM8N20 RFP8N18 RFP8N20 TA9292
    Text: 3875081 G E" SOLID STATE 01 Standard Power MOSFETs D eT| 3Û7SD01 001Ö137 3 _ I_ _ RFM8N18, RFM8N20, RFP8N18, RFP8N20 F ile N u m b e r 1447 N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFM8N18, RFM8N20, RFP8N18, RFP8N20 RFM8N18 RFM8N20 RFP8N18 RFP8N20* 3fl750Al IN18 TA9292

    2C337

    Abstract: A953 RFP8N18L Transistor 5C5 RFM8N18L RFM8N20L RFP8N20L rg 625
    Text: 3875081 G E SOLID STATE 01 ÜE|3fl7SDâl GDlfl44G 4 Logic-Level Power MOSFETs _ ?"//' — - - RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L RFM8N18L RFM8N20L RFP8N18L RFP8N20L IV03lâ 92CS-37226 2C337 A953 Transistor 5C5 rg 625

    RFP8N18L

    Abstract: RFM8N18L TA9535 RFP8N20L RCA 518 rca 519 RFM8N20L RFP8M20L
    Text: Logic-Level Power MOSFETs_ RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L F ile N u m b e r 15114 N-Channel Logic Level Power Field-Effect Transistors L2 FET 8 A, 180 V and 200 V rDs(on): 0.5fi Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 92CS-3374I RFM8N18L RFM8N20L RFP8N18L RFP8M20L 8N20L. TA9535 RCA 518 rca 519

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    72Z4

    Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets
    Text: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives


    OCR Scan     		PDF

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    8n20

    Abstract: 8N18 rfm8n
    Text: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited


    OCR Scan     		PDF 8N18/8N20 RFP8N18/8N20 T0-204AA 43G2E71 0Q41b7fl RFP8N18 RFP8N20 S-36167 3-36I64 8n20 8N18 rfm8n

    Untitled

    Abstract: No abstract text available
    Text: H A R R I S SEflICOND SECT OR böE D • 4 3 0 2 27 1 0 0 5 1 0 1 0 TTfi ■ PCF8N20W P^jFfäN20D H a r r is HAS S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated 'if • Contact Metallization - Gate and Source - Aluminum


    OCR Scan     		PDF PCF8N20W Mil-Std-750, RFM8N20 RFP8N20 IRFD220R IRF220R IRF620R PCF8N20D 1-800-4-HARRIS

    2N6901

    Abstract: 2N6903 THOMSON DISTRIBUTOR RFL1N10L RFL2N05L RFM15N05L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L
    Text: _ THOMSON/ 5SE D DISTRIBUTOR • TDEtifi73 0G0S713 TCS< 4EB Power MOSFETs Logic Level - L2FETs — N-Channel Types N. Package Q Maximum Ratings BVpsS V >d s (A) 'DS(ON) O HMS e AS (mj) 50 2 4 15 14 16 25 50 0.75 0.60 0.14 0.100 0.047 0.047 0.22*


    OCR Scan     		PDF 0G0S713 O-204 O-205 O-220 O-251 O-252 O-247 RFL2N05L RFM15N05L RFP4N05L 2N6901 2N6903 THOMSON DISTRIBUTOR RFL1N10L 2n6902 RFD14N05LSM RFD16N05L RFP14N05L

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40