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    RFP8N20 Price and Stock

    Rochester Electronics LLC RFP8N20

    N-CHANNEL POWER MOSFET
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    DigiKey RFP8N20 Bulk 2,366 523
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    Renesas Electronics Corporation RFP8N20

    - Bulk (Alt: RFP8N20)
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    Avnet Americas RFP8N20 Bulk 4 Weeks 629
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    Harris Semiconductor RFP8N20

    N-Channel, POWER MOSFET '
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    Rochester Electronics RFP8N20 2,366 1
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    HARTING Technology Group RFP8N20L

    Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA RFP8N20L 1,150
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    RFP8N20 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP8N20 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP8N20 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Drain current RMS continuous 8A. Scan PDF
    RFP8N20 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP8N20 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFP8N20 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFP8N20 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFP8N20L Fairchild Semiconductor 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFP8N20L Harris Semiconductor Power MOSFET Selection Guide Original PDF
    RFP8N20L Intersil 8A, 200V, 0.600 ?, Logic Level, N-Channel Power MOSFET Original PDF
    RFP8N20L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP8N20L General Electric N-channel logic level power field-effect transistor (LL FET). 200V, 8A. Scan PDF
    RFP8N20L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFP8N20L Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - PWR MOS 200V/8A/0.500 OHM N-CH TO-220AB Scan PDF
    RFP8N20L Unknown Shortform Datasheet & Cross References Data Short Form PDF

    RFP8N20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet Title FP8 0L bt A, 0V, 00 m, gic vel, Cha el wer OST) utho July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic


    Original     		PDF RFP8N20L TA09534. AN7254 AN7260 RFP8N20L TB334

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet July 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    AN7254

    Abstract: AN7260 RFP8N20L TB334
    Text: RFP8N20L Data Sheet January 2002 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level 5V driving sources in applications such as


    Original     		PDF RFP8N20L AN7254 AN7260 RFP8N20L TB334

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP8N20L 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features • 8A,200V This N-Channel enhancement mode silicon gate power field


    Original     		PDF RFP8N20L 00A/HS 300ns

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    rfp50n06 equivalent

    Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
    Text: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA


    Original     		PDF LM555CN ICM7555IBA ICM7555IPA ICM7556IPD ICM7555, ICM7242IPA 250AB IRF630 O-220AB RFP50N06 rfp50n06 equivalent BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    TA9291

    Abstract: RFP8N20 36161 RFM8N18 RFM8N20 RFP8N18 2csm
    Text: Standard Power M O S F E T s _ RFM8N18, RFM8N20, RFP8IM18, RFP8N20 File N um ber 1447 N-Channel Enhancemient-Mode Power Field-Effect Transistors 8 A, 180 V — 200 V o rDs on : 0.5 O Features: • ■ m m m SOA is power-dissipation lim ited


    OCR Scan     		PDF RFM8N18, RFM8N20, RFP8IM18, RFP8N20 92C3-3374I RFM8N18 RFM8N20 RFP8N18 RFP8N20* TA9291 RFP8N20 36161 2csm

    IN18

    Abstract: RFM8N18 RFM8N20 RFP8N18 RFP8N20 TA9292
    Text: 3875081 G E" SOLID STATE 01 Standard Power MOSFETs D eT| 3Û7SD01 001Ö137 3 _ I_ _ RFM8N18, RFM8N20, RFP8N18, RFP8N20 F ile N u m b e r 1447 N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF RFM8N18, RFM8N20, RFP8N18, RFP8N20 RFM8N18 RFM8N20 RFP8N18 RFP8N20* 3fl750Al IN18 TA9292

    2C337

    Abstract: A953 RFP8N18L Transistor 5C5 RFM8N18L RFM8N20L RFP8N20L rg 625
    Text: 3875081 G E SOLID STATE 01 ÜE|3fl7SDâl GDlfl44G 4 Logic-Level Power MOSFETs _ ?"//' — - - RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L File Number 1514 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L RFM8N18L RFM8N20L RFP8N18L RFP8N20L IV03lâ 92CS-37226 2C337 A953 Transistor 5C5 rg 625

    RFP8N18L

    Abstract: RFM8N18L TA9535 RFP8N20L RCA 518 rca 519 RFM8N20L RFP8M20L
    Text: Logic-Level Power MOSFETs_ RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L F ile N u m b e r 15114 N-Channel Logic Level Power Field-Effect Transistors L2 FET 8 A, 180 V and 200 V rDs(on): 0.5fi Features: • Design optim ized fo r 5 volt gate drive


    OCR Scan     		PDF RFM8N18L, RFM8N20L, RFP8N18L, RFP8N20L 92CS-3374I RFM8N18L RFM8N20L RFP8N18L RFP8M20L 8N20L. TA9535 RCA 518 rca 519

    Untitled

    Abstract: No abstract text available
    Text: RFP8N20L interdi Da ta S h e e t J u l y 1999 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET Features Formerly developmental type TA09534. PACKAGE T O -2 2 0 A B • rDS ON = 0 .6 0 0 0 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS,


    OCR Scan     		PDF RFP8N20L TA09534.

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    72Z4

    Abstract: 8N18L RFP8N18L RFP8N20L RFP mosfets
    Text: h A R f r is R FM 8 N 18L /2 0 L R FP8 N 18 L /2 0 L N -Channel Logic Level Power Field-Effect Transistors L2 FET A u g u s t 1991 Package Features T O -20 4 A A BOTTOM VIEW • 8A, 1 8 0V and 2 0 0 V • rD S (0 N ) = ° - 5 a • Design O p tim ized for 5V G ate Drives


    OCR Scan     		PDF

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan     		PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E

    8n20

    Abstract: 8N18 rfm8n
    Text: H A J R R RFM 8N18/8N20 RFP8N18/8N20 I S HARRIS SEMICOND SECTOR 5fc>E J> m 43G2E71 0Q41b7fl TTÔ IHAS August 1991 N-Channel Enhancement Mode Power Field Effect Transistors 7 ^ 3 4 */ Packages Features T0-204AA • 8A, 180V and 200V • rDS(on = o .s n • S O A is Pow er-D issipation Limited


    OCR Scan     		PDF 8N18/8N20 RFP8N18/8N20 T0-204AA 43G2E71 0Q41b7fl RFP8N18 RFP8N20 S-36167 3-36I64 8n20 8N18 rfm8n

    Untitled

    Abstract: No abstract text available
    Text: H A R R I S SEflICOND SECT OR böE D • 4 3 0 2 27 1 0 0 5 1 0 1 0 TTfi ■ PCF8N20W P^jFfäN20D H a r r is HAS S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated 'if • Contact Metallization - Gate and Source - Aluminum


    OCR Scan     		PDF PCF8N20W Mil-Std-750, RFM8N20 RFP8N20 IRFD220R IRF220R IRF620R PCF8N20D 1-800-4-HARRIS