Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RFG60P06 Search Results

    RFG60P06 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFG60P06E Fairchild Semiconductor 60A, 60V, 0.030 ?, ESD Rated, P-Channel Power MO Original PDF
    RFG60P06E Harris Semiconductor 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET Original PDF
    RFG60P06E Intersil 60A, 60V, 0.030 ?, ESD Rated, P-Channel Power MOSFET Original PDF
    RFG60P06E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFG60P06E Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - PWR MOS 60V/60A/0.030 OHM P-CH ESD RATED Scan PDF
    RFG60P06E Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFG60P06E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFG60P06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rfg60p06

    Abstract: No abstract text available
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,


    Original
    PDF RFG60P06E RFG60P06E TA09836. rfg60p06

    RFG60P06E

    Abstract: No abstract text available
    Text: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFG60P06E O-247 175oC RFG60P06E 11e-1 34e-3 46e-12) 15e-10 1e-30

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: RFG60P06E rfg60p06 TA09836
    Text: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits


    Original
    PDF RFG60P06E RFG60P06E 175oC P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06 TA09836

    RFG60P06E

    Abstract: P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06
    Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 60V • 2kV ESD Rated The RFG60P06E incorporates ESD protection and is designed to withstand 2kV Human Body Model of ESD. • Related Literature Formerly developmental type TA09836.


    Original
    PDF RFG60P06E RFG60P06E P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06

    Untitled

    Abstract: No abstract text available
    Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998


    Original
    PDF RFF60P06 RFF60P06 MIL-S-19500. 150oC, MIL-STD-750, MIL-S-19500, 100ms; 500ms;

    24V 20A SIEMENS battery charger

    Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
    Text: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.


    Original
    PDF

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    RFF60P06

    Abstract: RFG60P06E
    Text: RFF60P06 Data Sheet January 2002 25A†, 60V, 0.030 Ohm, P-Channel Power MOSFET The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding


    Original
    PDF RFF60P06 RFF60P06 MIL-S-19500. RFG60P06E

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original
    PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original
    PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    rfp50n06 equivalent

    Abstract: BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn
    Text: Intersil Timers, Oscillators, Rectifiers and MOSFETs Timers/Oscillators Mfr.Õs Type Max. Output Frequency Astable Description Package Type LM555CN Timer for Time Delays and Oscillator Applications 10 KHz (Typ.) +4.5 V to +18 V @ 15 mA 8 Lead PDIP ICM7555IBA


    Original
    PDF LM555CN ICM7555IBA ICM7555IPA ICM7556IPD ICM7555, ICM7242IPA 250AB IRF630 O-220AB RFP50N06 rfp50n06 equivalent BUZ71A equivalent buz11 equivalent BUZ71 equivalent IRF9540 equivalent RFP12N10L equivalent irf740 equivalent ICM755 IRF640 equivalent 555 timer for lm555cn

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    IRF510N

    Abstract: MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220
    Text: Power MOSFET Selection Guide Power MOSFET Products DUAL DIE POWER MOSFETs BVDSS VOLTS ID AMPS rDS ON OHMS VGS = 10V rDS(ON) OHMS VGS = 5V TYPE MS-012AA (SO-8) TS-001AA MO-169AB 12 3.50 - 0.050 Dual N RF1K49090 - - 12 3.50 - 0.130 Dual P RF1K49093 - - 12 2.5/3.5


    Original
    PDF MS-012AA TS-001AA MO-169AB RF1K49090 RF1K49093 RF1K49092 RF3S49092SM RF3V49092 RF1K49223 RF1K49088 IRF510N MOSFET Selection Guide Power MOSFET Selection Guide IRFR110N HRF3205 equivalent RFD7N10LESM IRFD110 IRFD9120 IRFP9150 irfu9220

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    RFF60P06

    Abstract: RFG60P06E rfg60p06
    Text: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model


    Original
    PDF RFF60P06 O-254AA 150oC RFF60P06 MIL-STD-750, 150oC, MIL-S-19500, 100ms; 500ms; RFG60P06E rfg60p06

    irf 3502

    Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
    Text: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page


    Original
    PDF P6KE20CA PVD1354 REF195FS S10K14 PVD3354 REF195GP S10K150 P6KE24A PVDZ172N irf 3502 S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad

    60P06E

    Abstract: 6b69e RS111
    Text: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l


    OCR Scan
    PDF RFG60P06E O-247 72e-3 43e-3 91e-7 98e-9 11e-1 34e-3 46e-12) 15e-10 60P06E 6b69e RS111

    Untitled

    Abstract: No abstract text available
    Text: tïï\ H U Ë J S E M I C O N D U C T O R A R R RFG60P06E IS 60A. 60V, ESD Rated. Avalanche Rated. P-Channel Enhancement-Mode Power MOSFET December 1995 Package Features JEDEC STYLE TO-247 • 60A, 60V ' SOURCE r DS ON = 0 -0 3 0 ^ • Temperature Compensating PSPICE Model


    OCR Scan
    PDF RFG60P06E O-247 RFG60P06E 98e-9 11e-1 34e-3 46e-12) 15e-10 1e-30

    60P05E

    Abstract: No abstract text available
    Text: RFG60P05E RFG60P06E ÎD H a r r is P-Channel Enhancem ent-M ode Power Field-Effect Transistors MegaFETs January 1994 F ea tu re s • RFG60P05E = -60A, -50V, Package rD S ( 0 n) T O -2 4 7 T O P VIEW = 0.026ÎÎ • RFG 60P06E = -60A, -60V, rD S(0n) = 0.030fl


    OCR Scan
    PDF RFG60P05E RFG60P06E RFG60P05E 60P06E 030fl 60P05E

    P-CHANNEL 45A TO-247 POWER MOSFET

    Abstract: RFG60P06E
    Text: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated


    OCR Scan
    PDF RFG60P06E RFG60P06E TA09836. 030CTION AN7254 AN7260. P-CHANNEL 45A TO-247 POWER MOSFET

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
    Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .


    OCR Scan
    PDF IRFU9110, IRFR9110 IRFU9120, IRFR9120 IRFR9220, IRFU9220 RFD8P06E, RFD8P06ESM, RFP8P06E RFD15P05, 100V 60A Mosfet 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode

    p12p10

    Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
    Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851


    OCR Scan
    PDF 2N6804 2N6849 2N6851 2N6895 2N6896 2N6897 2N6898 IRF9130, IRF9131, IRF9132, p12p10 IRF9530* p-channel power MOSFET Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240

    transistors 1UW

    Abstract: No abstract text available
    Text: RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998 Features Description • 25Af, 60V The RFF60P06 P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits gives optimum


    OCR Scan
    PDF RFF60P06 RFF60P06 IL-STD-750, IL-S-19500, 100ms; 500ms; transistors 1UW

    Power MOSFETs

    Abstract: p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet
    Text: i n t e r cil P-Channel Standard Gate _ Power MOSFETs | I m P ow er M O SFE T P ro d u cts PAGE P-Channel Test Circuits and W avefo rm s.


    OCR Scan
    PDF RFD15P05, RFD15P05SM, RFP15P05 RFD15P06, RFD15P06SM, RFP15P06 RFD8P05, RFD8P05SM, RFP8P05 RFD8P06E, Power MOSFETs p-channel mosfet p-channel 8a RFD8P05SM rfp12p10 30V 60A power p MOSFET 15a 50v p-channel mosfet